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    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
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    MPSA42 MOTOROLA Datasheets Context Search

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    MPSA42

    Abstract: MPSA42 motorola MPSA43 motorola mpsa42 MPS-A42
    Text: MOTOROLA Order this document by MPSA42/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42 * MPSA43 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector – Emitter Voltage


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    PDF MPSA42/D MPSA42 MPSA43 226AA) MPSA42/D* MPSA42 MPSA42 motorola MPSA43 motorola mpsa42 MPS-A42

    MPSA42

    Abstract: Motorola transistors MPSA43 Motorola MPSA42
    Text: MOTOROLA Order this document by MPSA42/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42 * MPSA43 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector – Emitter Voltage


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    PDF MPSA42/D MPSA42 MPSA43 226AA) MPSA42/D* MPSA42 Motorola transistors MPSA43 Motorola MPSA42

    Motorola MPSA42

    Abstract: MPSA43 equivalent MPSA42 MPSA43 motorola 039
    Text: MOTOROLA Order this document by MPSA42/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42* MPSA43 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector – Emitter Voltage


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    PDF MPSA42/D MPSA42* MPSA43 MPSA42 226AA) Motorola MPSA42 MPSA43 equivalent MPSA42 MPSA43 motorola 039

    MPSA42 equivalent

    Abstract: bc108 TO-92 MPSA43 equivalent BC237 MPF4857
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42* MPSA43 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector – Emitter Voltage VCEO 300 200 Vdc Collector – Base Voltage


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    PDF MPSA42* MPSA43 MPSA42 MPSA43 226AA) Re218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSA42 equivalent bc108 TO-92 MPSA43 equivalent BC237 MPF4857

    MAX471

    Abstract: AN1934 Motorola MPSA42 MAX472 mpsa92 APP1934 MAX4080 MPSA42 current source PNP avalanche transistor
    Text: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS AUTOMOTIVE Keywords: high voltage, current sense amp, current monitor, amplifier, high-side, current sense amplifiers, amps Mar 14, 2003 APPLICATION NOTE 1934 Add High Voltage Capability to the MAX471/MAX472 High-Side


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    PDF MAX471/MAX472 MAX471 MAX472 com/an1934 MAX4080: MAX471: MAX472: AN1934, APP1934, Appnote1934, AN1934 Motorola MPSA42 mpsa92 APP1934 MAX4080 MPSA42 current source PNP avalanche transistor

    MAX471

    Abstract: AN1934 mpsa92 MAX4080 MAX472 MPSA42 Motorola MPSA42 motorola darlington power transistor MPSA42 amplifier
    Text: AMPLIFIER AND COMPARATOR CIRCUITS Application Note 1934: Mar 14, 2003 Add High Voltage Capability to the MAX471/MAX472 High-Side Current Sense Amplifiers An avalanche diode and current source provide a floating power supply to allow high-side current sense


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    PDF MAX471/MAX472 MAX471 MAX472 MPSA92, MAX471/2 DI434, MAX4080: MAX471: MAX472: com/an1934 AN1934 mpsa92 MAX4080 MPSA42 Motorola MPSA42 motorola darlington power transistor MPSA42 amplifier

    MAX471

    Abstract: MAX472 mpsa92 AN1934 APP1934 MAX4080 MPSA42 300VA Appnote19
    Text: Maxim/Dallas > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS AUTOMOTIVE Keywords: high voltage, current sense amp, current monitor, amplifier, high-side, current sense amplifiers, amps Mar 14, 2003 APPLICATION NOTE 1934 Add High Voltage Capability to the MAX471/MAX472 High-Side


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    PDF MAX471/MAX472 MAX471 MAX472 com/an1934 MAX4080: MAX471: MAX472: AN1934, APP1934, Appnote1934, mpsa92 AN1934 APP1934 MAX4080 MPSA42 300VA Appnote19

    2SC1861

    Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 go. 95 PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 Manufacturer V(BR)CEO hFE Ic Max (A) fT (Hz) PhilipsElec Siemens Akt See Index


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    PDF PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 2SC1861 mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


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    PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


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    PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    psa42

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MPSA42/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42* MPSA43 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol MPSA42 MPSA43 Unit C o lle c to r-E m itte r Voltage VCEO 300 200 Vdc C o lle c to r-B a s e Voltage


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    PDF MPSA42/D MPSA42* MPSA43 MPSA42 psa42

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42* MPSA43 NPN Silicon ’ Motorola Preferred Device EM ITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol MPSA42 MPSA43 Unit VCEO 300


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    PDF MPSA42* MPSA43 MPSA42 MPSA43

    MPSA42

    Abstract: mpsa43 psa42 PSA43
    Text: MPSA42* MPSA43 MAXIMUM RATINGS Symbol MPSA42 MPSA43 Unit Collector-Emitter Voltage v CEO 300 200 Vdc Collector-Base Voltage VCBO 300 200 Vdc Emitter-Base Voltage v EBO 6.0 Rating 6.0 Vdc Collector Current — Continuous 'c 500 mAdc Total Device Dissipation a T ^ = 25°C


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    PDF MPSA42* MPSA43 MPSA42 MPSA43 O-226AA) PSA42 PSA43 PSA43

    psa42

    Abstract: PSA43
    Text: MPSA42* MPSA43 MAXIMUM RATINGS Symbol MPSA42 MPSA43 U n it C o lle c to r -E m itte r V o lta g e Rating VCEO 300 200 Vdc C o lle c to r-B a s e V o lta g e v CBO 300 200 V dc E m itte r-B a s e V o lta g e v EBO 6.0 6.0 V dc C o lle c to r C u rre n t — C o n tin u o u s


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    PDF MPSA42* MPSA43 MPSA42 O-226AA) MPSA42 PSA43 MPSA42, psa42

    transistor motorola 359

    Abstract: MPSA28 MPSA29 MPSA42 MPSA43 MPSA44 transistor MPSA42 2904 g
    Text: M PSA28 M PSA 29* MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Collector-Emitter Voltage VCES 80 100 Collector-Base Voltage VCBO 80 100 Emitter-Base Voltage Vdc Vdc vebo 12 Vdc Collector Current — Continuous 'c 500 mAdc Total Device Dissipation @ T /\ = 25°C


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    PDF MPSA28 MPSA28 MPSA29 O-226AA) PSA44 transistor motorola 359 MPSA42 MPSA43 MPSA44 transistor MPSA42 2904 g

    2N3059

    Abstract: MPSU10 MPS-U10 MPSAC42 2N3742 2n5058 2N9517 mp8d motorola opto transistor MM3002
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 f MOTOROLA « r SC ~Im » FJt3t.7SSS <DIODES/OPTO> 34C 003fl011 38011 D * SILICON SM ALL-SIGNAL TRANSISTOR DICE continued MPSAC42 DIE NO. — NPN LINE SOURCE — DMB107 This die provides performance similar to that of the following device types:


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    PDF 003fl011 DMB107 2N3742 2N4826 2N4927 2N5058 2N3059 2N6516 2N9517 2N8557 MPSU10 MPS-U10 MPSAC42 mp8d motorola opto transistor MM3002