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    MPS5179 SMALL SIGNAL TRANSISTOR Search Results

    MPS5179 SMALL SIGNAL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    MPS5179 SMALL SIGNAL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4


    Original     		PDF 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918

    MPS5179

    Abstract: MPS5179 small signal transistor 8-NP S00406
    Text: NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR MPS5179 MPS5179 ISSUE 2 – FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY


    Original     		PDF MPS5179 900MHz 100MHz 200MHz MPS5179 MPS5179 small signal transistor 8-NP S00406

    1N3195

    Abstract: MPS5179
    Text: High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous


    Original     		PDF MPS5179 226AA) r14525 MPS5179/D 1N3195 MPS5179

    1N3195

    Abstract: MPS5179
    Text: MOTOROLA Order this document by MPS5179/D SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc


    Original     		PDF MPS5179/D MPS5179 226AA) MPS5179/D* 1N3195 MPS5179

    MPS5179

    Abstract: No abstract text available
    Text: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous


    Original     		PDF MPS5179 226AA) r14525 MPS5179/D MPS5179

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage VEBO 2.5 Vdc Collector Current — Continuous


    Original     		PDF MPS5179 O-226AA) MPS5179/D

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous


    Original     		PDF MPS5179 226AA) MPS5179/D

    MPS5179

    Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
    Text: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF MPS5179 PN5179 MMBT5179 OT-23 MPS5179 MMBT5179 TRANSISTOR C 3223 MPS5179 small signal transistor PN5179

    MPS517

    Abstract: MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG Marking code mps
    Text: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20


    Original     		PDF MPS5179 MPS5179/D MPS517 MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG Marking code mps

    Untitled

    Abstract: No abstract text available
    Text: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20


    Original     		PDF MPS5179 MPS5179/D

    pn5179

    Abstract: MMBT5179 TF135 1/MPS5179
    Text: MPS5179 / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 C E C B TO-92 C B SOT-23 E E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF MPS5179 MMBT5179 PN5179 MPS5179 MMBT5179 OT-23 pn5179 TF135 1/MPS5179

    cb amplifier

    Abstract: common emitter amplifier FMMT5179 MPS5179 DSA003697
    Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C


    Original     		PDF FMMT5179 900MHz 100MHz 200MHz MPS5179 cb amplifier common emitter amplifier FMMT5179 MPS5179 DSA003697

    Untitled

    Abstract: No abstract text available
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23

    CBVK741B019

    Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PDF PN5179 MMBT5179 OT-23 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223

    SS9014

    Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A
    Text: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio


    Original     		PDF MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 SS9014 MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A

    low noise transistors bc638

    Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
    Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22


    Original     		PDF MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 low noise transistors bc638 BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856

    transistor rc4

    Abstract: MMBT5179 MPS5179
    Text: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common


    OCR Scan     		PDF MPS5179 MMBT5179 OT-23 tS0113D transistor rc4 MMBT5179 MPS5179

    TRANSISTOR C 3223

    Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
    Text: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.


    OCR Scan     		PDF MPS5179 MMBT5179 MPS5179 TRANSISTOR C 3223 TRANSISTOR C 1177 BT5179 NPN power transistor spice

    bf282

    Abstract: mps51
    Text: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency


    OCR Scan     		PDF MPS5179 MMBT5179 PN5179 MMBT5179 OT-23 28E-18 bf282 mps51

    g300 rev 2.0

    Abstract: SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223
    Text: MICQNDUCTGR i MPS5179 PN5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 piA to 30 mA range in common em itter or comm on base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.


    OCR Scan     		PDF MPS5179 MMBT5179 PN5179 g300 rev 2.0 SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223

    c 2579 power transistor

    Abstract: c 2579 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor NPN Silicon M PS5179 M otorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em ltter Voltage Symbol Value Unit Vdc Vdc VCEO 12 C ollector-B ase Voltage VCBO 20 E m itter-B ase Voltage


    OCR Scan     		PDF PS5179 334fl c 2579 power transistor c 2579 transistor

    1N3195

    Abstract: No abstract text available
    Text: MPS5179* CASE 29-04, STYLE 1 TO-92 TO-226AA M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage vebo 2.5 Vdc Collector Current — Continuous <C 50 m Adc Total Device Dissipation (a T ^ = 25°C


    OCR Scan     		PDF MPS5179* O-226AA) MPS5179 1N3195 1N3195

    r5500

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR RF TRANSISTOR ISSUE 3 - MARCH 1994 FEATURES * High f T=900MHz Min * Max capacitance=1pF * Low noise 5dB APPLICATIONS * * * Cordless telephones Keyless en try systems W ideband instrum entation am plifiers * * * W ireless Ians Remote m etering


    OCR Scan     		PDF 900MHz 100MHz 200MHz 200MHz MPS5179 r5500

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR RF TRANSISTOR ISSUE 3 -MARCH 1994 FEATURES * High fT=900MHz Min * Maxcapacitance=1pF * Low noise 5dB APPLICATIONS * Cordless telephones * Keyless entry systems * Wideband instrumentation amplifiers * Wireless Ians * Remote metering * Telemetry


    OCR Scan     		PDF 900MHz 001G35S