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    MPS4124 EQUIVALENT Search Results

    MPS4124 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MPS4124 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPS4124 equivalent

    Abstract: OF transistor 2N2222 to-92 BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCE 25 Vdc Collector – Base Voltage VCB 30 Vdc Emitter – Base Voltage


    Original     		PDF MPS4124 226AA) C/218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS4124 equivalent OF transistor 2N2222 to-92 BC237

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		PDF SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original     		PDF Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093

    2n3819 replacement

    Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device


    Original     		PDF MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265

    MIL-STD-750 method 1037

    Abstract: BC237 BF245 MPF4856
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOD-123 Schottky Barrier Diodes MMSD301T1 MMSD701T1 The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other


    Original     		PDF OD-123 MMSD301T1, MMSD701T1 MMBD301LT1, MMBD701LT1 MMSD301T1 MMSD701T1 m218A MIL-STD-750 method 1037 BC237 BF245 MPF4856

    MPS751 equivalent

    Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS


    Original     		PDF MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor

    mpsa63 replace

    Abstract: BC237 MPSA63 equivalent J111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit


    Original     		PDF MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces


    Original     		PDF BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    motorola JFET 2N3819

    Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current


    Original     		PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA

    transistor equivalent CT 2n5551

    Abstract: EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter 1N5148
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5148 1N5148A Designed for electronic tuning and harmonic–generation applications, and provide solid–state reliability to replace mechanical tuning methods. • Guaranteed High–Frequency Q


    Original     		PDF 1N5148 1N5148A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 transistor equivalent CT 2n5551 EQUIVALENT TRANSISTOR bc109c BC237 BC238 h parameter

    BC237

    Abstract: MMBV2107 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV74LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


    Original     		PDF BAV74LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MMBV2107 BCY72

    BC237

    Abstract: 2n2222 sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BC237 2n2222 sot-23

    BC237

    Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF VN2222LL 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819

    MPSA44 equivalent

    Abstract: BC237 BF244A MOTOROLA Transistor BC107 PLASTIC PACKAGE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MPSA44 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO


    Original     		PDF MPSA44 226AA) Sym218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPSA44 equivalent BC237 BF244A MOTOROLA Transistor BC107 PLASTIC PACKAGE