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    MPF910

    Abstract: MFE910 7090J
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MPF910/D DATA MPF910 @~~~fn$witching — Enhancement 3 DRAIN I 2 GATE 9 l-SOURCE MMIMUM RATINGS I Rating Symbol 60 VGS *2O *4O VGSM Drain Current - Continuous l – Pulsed(2) Total Device Dissipation


    Original     		MPF910/D MPF910 MPF91O MFE910 OW1-2447 1AOG77 MPF910 MFE910 7090J PDF

    MPF910

    Abstract: MFE910 power semiconductor 1973
    Text: I MFE910 MPF910 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR This TMOS FET is designed for high-voltage, high-speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor of UL-to-high voltage interface and high voltage


    Original     		MFE910 MPF910 O-205AD MPF910 MFE910 power semiconductor 1973 PDF