AE sot-23
Abstract: SOT-23 6F PO diode marking sot-23 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 M6H MARKING sot23
Text: MOTOROLA Order this document by MMBD352LT1/D SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
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MMBD352LT1/D
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
236AB)
AE sot-23
SOT-23 6F
PO diode marking sot-23
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
M6H MARKING sot23
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum
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MMBV609LT1/D
MMBV609LT1
MMBV609LT1/D
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MMBV432
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum
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MMBV432LT1/D
MMBV432LT1
MMBV432LT1/D
MMBV432
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MMBTH81LT1
Abstract: MMBTH81L 3D marking sot23 sot-23 Marking 3D 3D sot23 diodes
Text: MOTOROLA Order this document by MMBTH81LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –20 Vdc
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MMBTH81LT1/D
MMBTH81LT1
236AB)
MMBTH81LT1/D*
MMBTH81LT1
MMBTH81L
3D marking sot23
sot-23 Marking 3D
3D sot23 diodes
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MMBFJ175LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max
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MMBFJ175LT1/D
MMBFJ175LT1
236AB)
MMBFJ175LT1/D*
MMBFJ175LT1
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BAS40LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS40LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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BAS40LT1/D
BAS40LT1
236AB)
BAS40LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV105GLT1/D
MMBV105GLT1
236AB)
MMBV105GLT1/D
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33464/D MC33464 Micropower Undervoltage Sensing Circuits The MC33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several
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MC33464/D
MC33464
MC33464/D
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BAS70LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS70LT1/D SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAS70LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces
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BAS70LT1/D
BAS70LT1
236AB)
BAS70LT1
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BSS64LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage
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BSS64LT1/D
BSS64LT1
BSS64LT1/D*
BSS64LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV105GLT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV105GLT1/D
MMBV105GLT1
236AB)
MMBV105GLT1/D
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MC33464
Abstract: a2cb motorola 4680 MC33464-D Voltage Detector SOT-89 marking MC33464 marking 121201 0k marking sot-89 1R SOT89
Text: Order this document by MC33464/D MC33464 Micropower Undervoltage Sensing Circuits The MC33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several
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MC33464/D
MC33464
MC33464
a2cb
motorola 4680
MC33464-D
Voltage Detector SOT-89 marking
MC33464 marking
121201
0k marking sot-89
1R SOT89
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BAS21LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode BAS21LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current
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BAS21LT1/D
BAS21LT1
236AB)
BAS21LT1/D*
BAS21LT1
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MMBTA55
Abstract: MMBTA55LT1 MMBTA56 MMBTA56LT1
Text: MOTOROLA Order this document by MMBTA55LT1/D SEMICONDUCTOR TECHNICAL DATA Driver Transistors MMBTA55LT1 MMBTA56LT1* COLLECTOR 3 PNP Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol MMBTA55 MMBTA56 Unit VCEO VCBO –60 –80
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MMBTA55LT1/D
MMBTA55LT1
MMBTA56LT1*
MMBTA55
MMBTA56
236AB)
MMBTA56LT1
MMBTA55LT1/D*
MMBTA55
MMBTA55LT1
MMBTA56
MMBTA56LT1
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MMBFJ177LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBFJ177LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc
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MMBFJ177LT1/D
MMBFJ177LT1
236AB)
MMBFJ177LT1
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marking 8b sot-23
Abstract: marking jv BAS116LT1 BAS116LT3
Text: MOTOROLA Order this document by BAS116LT1/D SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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BAS116LT1/D
BAS116LT1
BAS116LT1
BAS116LT3
inch/10
236AB)
marking 8b sot-23
marking jv
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marking JY sot-23
Abstract: BAV199 marking 8b sot-23 RESISTOR footprint dimension JY marking transistor BAV199LT1 BAV199LT3
Text: MOTOROLA Order this document by BAV199LT1/D SEMICONDUCTOR TECHNICAL DATA BAV199LT1 Dual Series Switching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times
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BAV199LT1/D
BAV199LT1
BAV199LT1
BAV199LT3
inch/10
236AB)
marking JY sot-23
BAV199
marking 8b sot-23
RESISTOR footprint dimension
JY marking transistor
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m3j diodes
Abstract: MMBTH69LT1 MMBTH69
Text: MOTOROLA Order this document by MMBTH69LT1/D SEMICONDUCTOR TECHNICAL DATA UHF/VHF Transistor MMBTH69LT1 COLLECTOR 3 PNP Silicon • Designed for UHF/VHF Amplifier Applications Motorola Preferred Device 1 BASE • High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA
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MMBTH69LT1/D
MMBTH69LT1
236AB)
MMBTH69LT1/D*
m3j diodes
MMBTH69LT1
MMBTH69
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MMBT404ALT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBT404ALT1/D SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MMBT404ALT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol
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MMBT404ALT1/D
MMBT404ALT1
236AB)
MMBT404ALT1/D*
MMBT404ALT1
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MMBFJ175LT1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBFJ175LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 V VGS r – 25 V Symbol Max
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MMBFJ175LT1/D
MMBFJ175LT1
236AB)
MMBFJ175LT1/D*
MMBFJ175LT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA °rd6rNu“ *S Semiconductor Components M AX809 M AX810 SOT-23 PLASTIC PACKAGE TO-236 CASE 318 3-P in M icroprocessor Reset Monitors Features • Precision Vcc Monitor for 3.0V, 3.3V, and 5.0V Supplies • 140msec Guaranteed Minimum RESET, RESET
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AX809
AX810
OT-23
O-236)
140msec
MAX809)
OT-23
MAX809xTR
MAX810xTR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silico n Tuning Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package
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OT-23
V432LT1
MMBV432LT1
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MOTOROLA DIODE 250
Abstract: Diode Marking C3 dual diode marking c3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA S ilic o n Tuning D io d e MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT-23 plastic package
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OT-23
MMBV609LT1
MOTOROLA DIODE 250
Diode Marking C3
dual diode marking c3
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zener t2d
Abstract: T2D zener T2D 8N lm 338 zener T2D 77 zener t2d 40 t2d diodes zener t2d 70 zener t2d 26 T2D 17 67
Text: motorola SC < D I O D E S / O P T O t,E D • t 3 b 7 2s s D D 8 S « 3 W M0T7 SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.2 Surface Mounted SECTION 4.2.4.2.1 225 mW SOT-23 MULTIPLE PACKAGE QUANTITY MPQ) REQUIREMENTS
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D0flS433
OT-23
OT-23
BZX84C2V4L
BZX84C7SL
MMBZ5221BL
MMBZ5270BL
MMBZ5256BL
MMBZ5257BL
MMBZ5258BL
zener t2d
T2D zener
T2D 8N
lm 338 zener
T2D 77
zener t2d 40
t2d diodes
zener t2d 70
zener t2d 26
T2D 17 67
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