MHT10P10
Abstract: SM 8002 C NS 8002 1151
Text: MOTOROLA SC XSTRS/R F 4bE D fe.3t.7254 00*12474 b • MOTb MOTOROLA SEM IC O N D U C TO R i TECHNICAL DATA M H T10P10 Discrete Military Products Suffixes: HX, HXV P o w e r Field-Effect T ra n sisto r Processed per MIL-S-19500/547 P-Channel Enhancement-Mode
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T10P10
MIL-S-19500/547
O-116)
MHT10P10
SM 8002 C
NS 8002 1151
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2p50e
Abstract: 4336 MOSFET TB2P5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TB 2P 50E TM O S E -FE T ™ Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate The D2pAK package has the capability of housing a larger die
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TB2P50E
2p50e
4336 MOSFET
TB2P5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner's Data Sheet MTB2N40E TM O S E -FE T ™ High E nergy P o w er FET D2PAK fo r S u rfa c e M ount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.8 OHM N-Channel Enhancement-Mode Silicon Gate
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MTB2N40E
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8002 1028
Abstract: MRF69 mrf6985
Text: MOTOROLA SC XSTRS/R F m = E fe.3t.72SH t> 0012527 1 « 1 1 0 T b 7^ 33'fO MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MRF6985 M RF6986 DM0 Suffixes: m in i IMPN S ilic o n P u sh -P u ll RF P o w e r T ra n sisto rs HX, HXV Processed per
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MRF6985
RF6986
MIL-S-19500/RFP
O-116)
8002 1028
MRF69
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eel 16n
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data S heet MTB16N25E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M o to ro la P re fe rre d O e v lc e T M O S P O W E R FE T 16 A M P E R E S 250 VO LTS N-Channel Enhancement-Mode Silicon Gate
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TB16N25E
eel 16n
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TTL 74ls21
Abstract: 74ls21
Text: g MOTOROLA SN54/74LS21 DUAL 4-INPUT AND GATE DUAL 4-INPUT AND GATE [ÏÏ1 R [ÏÏ1 M N [71 fe i vcc LOW POWER SCHOTTKY J SUFFIX CERAMIC CASE 632-08 GND N SUFFIX , D SUFFIX SOIC CASE 751A ORDERING INFORMATION SN54LSXXJ SN74LSXXN SN74LSXXD Ceramic Plastic
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SN54/74LS21
SN54LSXXJ
SN74LSXXN
SN74LSXXD
SN54/74LS21
TTL 74ls21
74ls21
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1N100E
Abstract: fr411
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTB1N100E TMOS E -FE T ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS on = 9-0 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-04
0E-03
0E-02
0E-01
1N100E
fr411
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20N03
Abstract: 20n03h
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD20N03HDL HDTM O S E -FE T High D en sity P o w er FET DPAK fo r S u rfa c e M ount M o to ro la P re fe rre d D e v ic e TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS R DS on = 0-035 OHM
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14049U
Abstract: C14050B MC14049uB data only lt 7550
Text: MOTOROLA SC { L O G I C } 6 3 6 7 2 5 2 .MOTOROLA SC L O G IC TS ~ DE | . b3b75SE 007^54^ 9 8 0 7 9 549 D - MC14049UB MC14050B MOTOROLA CMOS SSI HEX BUFFERS (LOW -POW ER C O M P L E M E N T A R Y MOS) T h e M C 1 4 0 4 9 U B h e x in v e r t e r / b u f fe r a n d M C 1 4 0 5 0 B n o n
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b3b75SE
14049U
C14050B
MC14049uB data only
lt 7550
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mc33202 schematic
Abstract: mc33202 schematic amp motorola MC33201 MC33201D MC33201P MC33201VD MC33201VP MC33202D MC33202P MC33202VD
Text: "791-fe&f MC33201 MC33202 MC33204 MOTOROLA é I Advance Information LOW VOLTAGE RAIL-TO-RAIL OPERATIONAL AMPLIFIERS Rail-to-Rail™ Operational Amplifiers The MC33201/2/4 family of operational amplifiers provide rail—to—rail operation on both the input and output. The inputs can be driven as high as
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MC33201/2/4
mc33202 schematic
mc33202 schematic amp
motorola MC33201
MC33201D
MC33201P
MC33201VD
MC33201VP
MC33202D
MC33202P
MC33202VD
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transistor 228 T3
Abstract: A 673 transistor 369A-13 MJD47 MJD50 TIP47 TIP50
Text: MOTOROLA Order this document by MJD47/D SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for line operated audio output amplifier, switchmode power supply drivers
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MJD47/D
TIP47,
TIP50
MJD47
MJD50
69A-13
transistor 228 T3
A 673 transistor
369A-13
TIP47
TIP50
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJD243/D SEMICONDUCTOR TECHNICAL DATA Plastic Power Transistor M JD 243* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e . . . designed for low voltage, low-power, high—gain audio amplifier applications.
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MJD243/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRB2060CT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Power Rectifier MBRB2060CT D2PAK Surface Mount Power Package M o to ro la P re fe rre d D e vic e Employs the use of the Schottky Barrier principle with a platinum barrier metal.
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MBRB2060CT/D
O-220
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MOCD211
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M OCD211/D SEMICONDUCTOR TECHNICAL DATA MOCD211 Dual Channel Small Outline Optoisolators [CTR = 20% Min] Transistor Output M o to r o la P r e fe r r e d D e v ic e These devices consist of tw o gallium arsenide infrared emitting diodes
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OCD211/D
RS481A
MOCD211/D
MOCD211
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78T05
Abstract: 2N439 78T00
Text: g MOTOROLA M C78T00 Series Three-Am pere Positive Voltage Regulators This fam ily of fixed vollage regulators are m onolithic integrated circuits capable of driving loads in excess of 3.0 A. These three-term inal regulators em ploy internal current lim iting, therm al shutdow n, and s a fe -a re a
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C78T00
78T05
2N439
78T00
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transistor 30 j 127
Abstract: transistor d 965 al
Text: MOTOROLA Order this document by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 41C* Com plem entary Power Transistors PNP M JD 42C* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose amplifier and low speed switching applications.
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MJD41C/D
TIP41
TIP42
transistor 30 j 127
transistor d 965 al
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Untitled
Abstract: No abstract text available
Text: O rder this docum ent by M C78T00/D MOTOROLA MC78T00 Series Three-Ampere Positive Voltage Regulators This fam ily of fixed voltage regulators are monolithic integrated circuits capable of driving loads in excess of 3.0 A. These three-term inal regulators em ploy internal current lim iting, therm al shutdow n, and s a fe -a re a
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C78T00/D
MC78T00
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transistor d 965 al
Abstract: transistor j 127 TRANSISTOR TYPE 0235 k 351 transistor JD31C A 673 transistor LB 127 transistor transistor 30 j 127 transistor cb 458 Q 0265 R
Text: MOTOROLA O rder this docum ent by M JD31/D SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose amplifier and low speed switching applications.
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JD31/D
TIP31
TIP32
MJD31
MJD32
69A-13
transistor d 965 al
transistor j 127
TRANSISTOR TYPE 0235
k 351 transistor
JD31C
A 673 transistor
LB 127 transistor
transistor 30 j 127
transistor cb 458
Q 0265 R
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motorola TO-252 package IC
Abstract: MTD4P05
Text: MOTOROLA •B SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD4P05 MTD4P06 Power Field Effect Transistors P-Channel Enhancement Mode Silicon Gate TM OS D PAK for Surface Mount or Insertion Mount TM O S PO W ER FE T s 4 A M P ER ES Y These TMOS Power FETs are designed for high speed, low loss
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MTD4P05
MTD4P06
MTD4P05,
motorola TO-252 package IC
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jis z 0237
Abstract: l 0734 HP11590B
Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1/D
MRF5811LT1,
2PHX34607Q
jis z 0237
l 0734
HP11590B
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MTD20P03HDL
Abstract: 1000C 369A-13 AN569 014 IR MOSFET Transistor
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P03H DL HDTM O S E -FE T ™ High D en sity P o w er FET DPAK for S u rfa c e M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand
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MTD20P03HDL
0E-05
JJJE-04
0e-03
0e-02
0E-01
1000C
369A-13
AN569
014 IR MOSFET Transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD6P10E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M o to ro la P re fe rre d D e v ic e TM O S POW ER FET 6 .0 A M P E R E S 100 VO LTS P-Channel Enhancement-Mode Silicon Gate
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TD6P10E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN M JD112* PNP Com plem entary Darlington Power Transistors M JD 117* DPAK For Surface Mount Applications ‘ M o t o r o la P r e fe r r e d D e v ic e Designed for general purpose power and switching such as output or driver stages
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MJD112/D
110-TIP
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip
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0E-05
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