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    MOSFET VDS 30V ID 6A TO 252 Search Results

    MOSFET VDS 30V ID 6A TO 252 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET VDS 30V ID 6A TO 252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6a smd transistor

    Abstract: transistor smd 6a equivalent smd mosfet PD-23 2SJ598 smd 6a transistor smd transistor 720 102-130 mosfet VDS 30V ID 6A TO 252
    Text: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ598 TO-252 RDS on 2 = 190 m MAX. (VGS = -4.0 V, ID =-6 A) Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 Built-in gate protection diode +0.15 0.50-0.15


    Original     		PDF 2SJ598 O-252 6a smd transistor transistor smd 6a equivalent smd mosfet PD-23 2SJ598 smd 6a transistor smd transistor 720 102-130 mosfet VDS 30V ID 6A TO 252

    TSM10N06

    Abstract: No abstract text available
    Text: TSM10N06 60V N-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY VDS (V) RDSON (mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 60 Features ID (A) 65 @ VGS = 10V 10 80 @ VGS = 5V 10 110 @ VGS = 4V 9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM10N06 O-252 TSM10N06CP TSM10N06

    mosfet 600V 6A N-CHANNEL

    Abstract: TSM6N60 mosfet 600V 60A mosfet VDS 30V ID 6A TO 252 TSM6N60CP ROG TSM6N60CH
    Text: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6.0 Features ● ● ● Block Diagram High power and current handing capability. Low RDS(ON) 1.25mΩ (Max.)


    Original     		PDF TSM6N60 O-251 O-252 TSM6N60CH 75pcs TSM6N60CP O-252 mosfet 600V 6A N-CHANNEL TSM6N60 mosfet 600V 60A mosfet VDS 30V ID 6A TO 252 TSM6N60CP ROG

    mosfet y1

    Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
    Text: HI-SINCERITY Spec. No. : MOS200702 Issued Date : 2007.03.01 Revised Date : 2007.03.28 Page No. : 1/4 MICROELECTRONICS CORP. H3055MJ H3055MJ Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Enhancement-Mode MOSFET 30V, 12A


    Original     		PDF MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055

    CHM6601PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM6601PAGP CURRENT 16 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM6601PAGP O-252) O-252 CHM6601PAGP

    N-Channel

    Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
    Text: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)


    Original     		PDF TSM6N60 O-251 O-252 75pcs TSM6N60CH TSM6N60CP N-Channel marking b14 diode B14 DIODE DIODE B14

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low


    Original     		PDF UTT6N10Z O-252 UTT6N10Z OT-223 UTT6N10ZG-AA3-R UTT6N10ZL-TN3-R UTT6N10ZG-TN3-R

    15n03gh

    Abstract: mosfet 15N03GH 15N03 15N03GJ 15n03GH mosfet marking codes transistors SSs AP15N03GJ
    Text: AP15N03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP15N03GH/J O-252 AP15N03GJ) O-251 O-251 15N03GJ 15n03gh mosfet 15N03GH 15N03 15N03GJ 15n03GH mosfet marking codes transistors SSs AP15N03GJ

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: AP15N03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching 30V RDS ON 80mΩ ID G ▼ RoHS Compliant BVDSS 15A S Description TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP15N03GH/J-HF O-252 AP15N03GJ) O-251 O-251 15N03GJ

    AP9569GJ

    Abstract: No abstract text available
    Text: AP9569GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ RoHS Compliant BVDSS -40V RDS ON 90mΩ ID G -14A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage


    Original     		PDF AP9569GH/J O-252 AP9569GJ) O-251 100ms AP9569GJ

    APM3095P

    Abstract: APM3095PU STD-020C
    Text: APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON =95mΩ (typ.) @ VGS=-10V RDS(ON)=140mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		PDF APM3095PU -30V/-8A, O-252 APM3095P APM3095P APM3095PU STD-020C

    AP15N03GJ

    Abstract: AP15N03GH
    Text: AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage


    Original     		PDF AP15N03GH/J O-252 AP15N03GJ) O-251 AP15N03GJ AP15N03GH

    tu 20 c

    Abstract: APM3095P APM3095PU
    Text: APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON =95mΩ (typ.) @ VGS=-10V RDS(ON)=140mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available


    Original     		PDF APM3095PU -30V/-8A, O-252 APM3095P APM3095 tu 20 c APM3095P APM3095PU

    3095P

    Abstract: APM3095P M3095P J-STD-020A
    Text: APM3095P P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-6A , RDS ON =95mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G TO-252 Package D S


    Original     		PDF APM3095P -30V/-6A O-252 O-252 3095P 3095P APM3095P M3095P J-STD-020A

    AP15N03H

    Abstract: AP15N03J
    Text: AP15N03H/J Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description G D S The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage


    Original     		PDF AP15N03H/J O-252 AP15N03J) O-251 AP15N03H AP15N03J

    Untitled

    Abstract: No abstract text available
    Text: AP9569GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D -40V RDS ON Fast Switching Characteristic RoHS Compliant & Halogen-Free 90m ID G -14A S Description G D S The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP9569GH/J-HF O-252 AP9569GJ) O-251 2500ms

    Untitled

    Abstract: No abstract text available
    Text: APM3095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6A , RDS ON =95mΩ(typ.) @ VGS=-10V RDS(ON)=140mΩ(typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		PDF APM3095PU -30V/-6A O-252 3095P

    Si4830

    Abstract: Fast Switching mosfet SI3433B smd diode 615
    Text: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6


    Original     		PDF 4110ppm 400ppm Q-101 BZX384 OD323 Si4830 Fast Switching mosfet SI3433B smd diode 615

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251  DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche


    Original     		PDF O-220 O-251 O-220F O-220F1 QW-R502-589

    ssm9973gj

    Abstract: RD33
    Text: SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge D Simple drive requirement Fast switching BV DSS 60V R DS ON 80mΩ 14A ID G S Description G D S The SSM9973GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited


    Original     		PDF SSM9973GH O-252 SSM9973GJ O-251, O-252 O-251 RD33

    15N03GH

    Abstract: 15N03 15N03GJ
    Text: AP15N03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 30V RDS ON Simple Drive Requirement Fast Switching 80m ID G 15A S Description G TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP15N03GH/J O-252 AP15N03GJ) O-251 O-251 15N03GJ 15N03GH 15N03 15N03GJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK2652-01 FU JI N-channel MOS-FET 900V FAP-IIS Series > Features - 6A 2,5Q 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    OCR Scan     		PDF 2SK2652-01 Tc-25â

    L03A

    Abstract: No abstract text available
    Text: FU JI stuMoruajK 2SK2099-01L,S FAP-IIA Series > Features - N-channel MOS-FET 250V 0,85Q 6A ' 20W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications


    OCR Scan     		PDF 2SK2099-01L L03A