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    MOSFET TRANSISTOR SMD MARKING CODE JS Search Results

    MOSFET TRANSISTOR SMD MARKING CODE JS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTOR SMD MARKING CODE JS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKXB DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB950UPE DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65XP O-236AB)

    TRANSISTOR SMD MARKING CODE QR

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


    Original     		PDF PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV185XN O-236AB) gate-sou15

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV28UN O-236AB)

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV20XN O-236AB) TRANSISTOR SMD MARKING CODE 1 KW

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV32UP O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV48XP O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV170UN O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV90EN O-236AB)

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB760EN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    SMD transistor Marking 1x

    Abstract: No abstract text available
    Text: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB8032XP DFN2020-6 OT1118) SMD transistor Marking 1x

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV65UN O-236AB)

    MOSFET TRANSISTOR SMD 033

    Abstract: 440 transistor
    Text: PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB8040XP DFN2020-6 OT1118) MOSFET TRANSISTOR SMD 033 440 transistor

    TRANSISTOR SMD MARKING CODE 1v

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB30XN DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE 1v NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV50UPE O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6


    Original     		PDF IPx65R190C6 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6

    SMD TRANSISTOR MARKING code TC

    Abstract: SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE IPP65R190C6 IPB65R190C6 Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6


    Original     		PDF IPx65R190C6 IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 SMD TRANSISTOR MARKING code TC SMD mosfet MARKING code C6 65C6190 g1 TRANSISTOR SMD MARKING CODE Diode type SMD marking SJ transistor smd code marking KEY Diode SMD SJ 19 ipa65r

    6r3k3c6

    Abstract: transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.0, 2010-07-21 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R3K3C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R3K3C6 6r3k3c6 transistor SMD MARKING CODE 772 IPD60R3K3C6 TRANSISTOR SMD MARKING CODE 42 JESD22

    65E6190

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6


    Original     		PDF IPx65R190E6 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 65E6190

    6r2k0c6

    Abstract: IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPD60R2K0C6 Data Sheet Rev. 2.0, 2010-07-20 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R2K0C6 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,


    Original     		PDF IPD60R2K0C6 6r2k0c6 IPD60R2K0C6 g1 TRANSISTOR SMD MARKING CODE JESD22

    65E6190

    Abstract: diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 IPP65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6


    Original     		PDF IPx65R190E6 IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 65E6190 diode smd E6 smd diode E6 Diode SMD SJ 19 Diode type SMD marking SJ IPW65R190E6 MOSFET TRANSISTOR SMD MARKING CODE 11 smd marking code E6 ipa65r