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    MOSFET NA IDSS Search Results

    MOSFET NA IDSS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET NA IDSS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    2SJ0672

    Abstract: 2SK3539 UP04979
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04979 Silicon N-channel MOSFET (Tr1) Silicon P-channel MOSFET (Tr2) 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d 1.20±0.05 For switching • 2SJ0672 + 2SK3539


    Original     		PDF 2002/95/EC) UP04979 2SJ0672 2SK3539 OD-723 2SJ0672 2SK3539 UP04979

    4405 n channel mosfet

    Abstract: PUB4702
    Text: Power Transistor Arrays MOSFETs PUB4702 Silicon n-channel power MOSFET For switching Unit: mm • Features M Di ain sc te on na tin nc ue e/ d • Avalanche energy capacity guaranteed • High-speed switching • Low ON resistance • No secondary surrender


    Original     		PDF PUB4702 4405 n channel mosfet PUB4702

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter


    Original     		PDF 2002/95/EC) 2SK0665G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SJ0536G Silicon P-channel MOSFET M Di ain sc te on na tin nc ue e/ d Secondary battery packs (Li ion battery, etc.) For switching circuits • Package ■ Features


    Original     		PDF 2002/95/EC) 2SJ0536G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0601G Silicon N-channel MOSFET For switching circuits • Package ■ Features • Code MiniP3-F2 • Pin Name 1: Gate 2: Drain 3: Source M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SK0601G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3064G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuit For rechargeable buttery pack (Li+ ion buttery, etc.) • Package ■ Features


    Original     		PDF 2002/95/EC) 2SK3064G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SK3539G

    2SK621

    Abstract: XN1872 XN01872
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK621 XN1872 XN01872

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SK0665 2SK665)

    2SK621

    Abstract: XN01872 XN1872 FET23
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


    Original     		PDF 2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3064G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuit For rechargeable buttery pack (Li+ ion buttery, etc.) ue pl d in an c


    Original     		PDF 2002/95/EC) 2SK3064G

    2SK3546G

    Abstract: 2sk3546
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3


    Original     		PDF 2002/95/EC) 2SK3546G 2SK3546G 2sk3546

    Untitled

    Abstract: No abstract text available
    Text: SFS9640 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS= -200V


    OCR Scan     		PDF SFS9640 -200V O-220F 040D2S 004002b

    Untitled

    Abstract: No abstract text available
    Text: SSP4N90A Advanced Power MOSFET FEATURES B ^D S S Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSP4N90A Avalan142 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    power mosfet 200A

    Abstract: No abstract text available
    Text: SSF17N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA M ax. @ VOS= 600V ■


    OCR Scan     		PDF SSF17N60A power mosfet 200A

    Untitled

    Abstract: No abstract text available
    Text: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V


    OCR Scan     		PDF SSP3N90A 0G4D370 003b32fl O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SFP9630 A d va n ce d Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : -10 nA Max. @ ■


    OCR Scan     		PDF -200V SFP9630

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U310A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B ^ dss - 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax. @ V,*, = 400V


    OCR Scan     		PDF IRFR/U310A 100lC)

    RU3S

    Abstract: SSS1N60A
    Text: SSS1N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 0.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 600V


    OCR Scan     		PDF SSS1N60A O-22QF 0040S05 B2788 RU3S SSS1N60A

    S45A

    Abstract: No abstract text available
    Text: IRFS510A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175t Operating Temperature Lower Leakage Current : 10 nA M ax @ VDS= 100V


    OCR Scan     		PDF IRFS510A IEFS510A S45A

    Untitled

    Abstract: No abstract text available
    Text: SSP4N80AS Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSP4N80AS O-220 00M1N 7Tb4142 DD3b33D

    1RFS840

    Abstract: 1RFS840A
    Text: 1RFS840A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower Ro^c*, : 0.638 £2 (Typ.)


    OCR Scan     		PDF 1RFS840A IRFS84 IRFS840A 1RFS840 1RFS840A

    pj 49 diode

    Abstract: No abstract text available
    Text: IRLW/I530A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ B V dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10 nA Max. @ VDS=100V


    OCR Scan     		PDF IRLW/I530A pj 49 diode