"943" to-220
Abstract: MTB1306 MOSFET n03 N0306
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand
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NTP75N03-06,
NTB75N03-06
O-220
"943" to-220
MTB1306
MOSFET n03
N0306
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Untitled
Abstract: No abstract text available
Text: NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand
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NTP75N03-06,
NTB75N03-06
O-220
NTP75N03-06/D
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SPICE QT 60 CIRCUIT DIAGRAMS
Abstract: MTB1306 MTP1306 75N03
Text: NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand
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NTP75N03-06,
NTB75N03-06
O-220
NTP75N03-06/D
SPICE QT 60 CIRCUIT DIAGRAMS
MTB1306
MTP1306
75N03
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SPICE QT 44 CIRCUIT DIAGRAMS
Abstract: MTP75N03HDL SPICE QT 52 CIRCUIT DIAGRAMS N03l MTB75N03HDL NTB75N03L09 NTP75N03L09
Text: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.
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NTP75N03L09,
NTB75N03L09
r14525
NTP75N03L09/D
SPICE QT 44 CIRCUIT DIAGRAMS
MTP75N03HDL
SPICE QT 52 CIRCUIT DIAGRAMS
N03l
MTB75N03HDL
NTB75N03L09
NTP75N03L09
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SPICE QT 52 CIRCUIT DIAGRAMS
Abstract: SPICE QT 44 CIRCUIT DIAGRAMS N03L09 n03l
Text: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.
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NTP75N03L09,
NTB75N03L09
MTP75N03HDL
r14525
NTP75N03L09/D
SPICE QT 52 CIRCUIT DIAGRAMS
SPICE QT 44 CIRCUIT DIAGRAMS
N03L09
n03l
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mvc 043
Abstract: No abstract text available
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal
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NTP75N03-06,
NTB75N03-06
MTP1306
mvc 043
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MTB1306
Abstract: MTP1306 NTB75N03-06 NTP75N03-06 MOSFET n03
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal
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NTP75N03-06,
NTB75N03-06
r14525
NTP75N03
MTB1306
MTP1306
NTB75N03-06
NTP75N03-06
MOSFET n03
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SPICE QT 52 CIRCUIT DIAGRAMS
Abstract: N03-06 MTB1306 MTP1306 NTB75N03-06 NTP75N03-06
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N–Channel TO–220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal
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NTP75N03-06,
NTB75N03-06
r14525
NTP75N03
SPICE QT 52 CIRCUIT DIAGRAMS
N03-06
MTB1306
MTP1306
NTB75N03-06
NTP75N03-06
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N03G
Abstract: ON N03G t23n03g T23N03 t23 n03g NTB23N03RG Datasheets N03G NTB23N03R NTB23N03RT4 NTB23N03RT4G
Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS on = 32 mW (Typ)
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NTB23N03R
NTB23N03R/D
N03G
ON N03G
t23n03g
T23N03
t23 n03g
NTB23N03RG
Datasheets N03G
NTB23N03R
NTB23N03RT4
NTB23N03RT4G
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T23N03
Abstract: NTB23N03R NTB23N03RT4 Code N03
Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • • http://onsemi.com 23 AMPERES, 25 VOLTS
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NTB23N03R
NTB23N03R/D
T23N03
NTB23N03R
NTB23N03RT4
Code N03
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91A SOT23
Abstract: 91A 10 ZXM61N03F ZXM61N03FTA ZXM61N03FTC
Text: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N03F
ZXM61N03FTA
91A SOT23
91A 10
ZXM61N03F
ZXM61N03FTA
ZXM61N03FTC
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T23N03
Abstract: NTB23N03R NTB23N03RT4
Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • • http://onsemi.com 23 AMPERES, 25 VOLTS
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NTB23N03R
NTB23N03R/D
T23N03
NTB23N03R
NTB23N03RT4
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N03RG
Abstract: 78N03 NTD78N03RG NTD78N03RT4 NTD78N03RT4G 369D NTD78N03R 78n03r NTD78N03
Text: NTD78N03R Power MOSFET 25 V, 85 A, Single N−Channel, DPAK Features • Low RDS on to Minimize Conduction Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available http://onsemi.com Applications V(BR)DSS • VCORE Applications
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NTD78N03R
NTD78N03R/D
N03RG
78N03
NTD78N03RG
NTD78N03RT4
NTD78N03RT4G
369D
NTD78N03R
78n03r
NTD78N03
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N03RG
Abstract: 78n03r NTD78N03RG 369D NTD78N03R NTD78N03RT4 NTD78N03RT4G
Text: NTD78N03R Power MOSFET 25 V, 85 A, Single N−Channel, DPAK Features • Low RDS on to Minimize Conduction Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS
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NTD78N03R
NTD78N03R/D
N03RG
78n03r
NTD78N03RG
369D
NTD78N03R
NTD78N03RT4
NTD78N03RT4G
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N03RG
Abstract: NTD78N03
Text: NTD78N03R Power MOSFET 25 V, 85 A, Single N−Channel, DPAK Features • Low RDS on to Minimize Conduction Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS
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NTD78N03R
NTD78N03R/D
N03RG
NTD78N03
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Untitled
Abstract: No abstract text available
Text: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N03F
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T23N03
Abstract: No abstract text available
Text: NTB23N03R Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • • • • • http://onsemi.com 23 AMPERES, 25 VOLTS
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NTB23N03R
T23N03
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ZXM61N03F
Abstract: ZXM61N03FTA ZXM61N03FTC
Text: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N03F
ZXM61N03FTA
ZXM61N03F
ZXM61N03FTA
ZXM61N03FTC
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NTD78N03
Abstract: No abstract text available
Text: NTD78N03R Power MOSFET 25 V, 85 A, Single N−Channel, DPAK Features • Low RDS on to Minimize Conduction Losses • Optimized Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available http://onsemi.com Applications RDS(on) TYP V(BR)DSS
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NTD78N03R
NTD78N03R/D
NTD78N03
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Untitled
Abstract: No abstract text available
Text: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N03F
ZXM61N03FTA
ZXM61N03FTC
DEV16)
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t50 N03rG
Abstract: N03RG t50n03 t50n03rg NTD50N03RG 369D NTD50N03R NTD50N03RT4 NTD50N03RT4G
Text: NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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NTD50N03R
NTD50N03R/D
t50 N03rG
N03RG
t50n03
t50n03rg
NTD50N03RG
369D
NTD50N03R
NTD50N03RT4
NTD50N03RT4G
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T70 N03
Abstract: t70n03 "T70 N03" on T70 N03 T70* n03 70N03 P NTD70N03RG -20/531 T70 n03
Text: NTD70N03R Power MOSFET 72 A, 25 V, N−Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low CISS to Minimize Driver Loss Low Gate Charge Pb−Free Packages are Available http://onsemi.com V(BR)DSS
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NTD70N03R
0E-05
0E-04
0E-01
NTD70N03R
NTD70N03RG
NTD70N03RT4
NTD70N03RT4G
NTD70N03R-1
T70 N03
t70n03
"T70 N03"
on T70 N03
T70* n03
70N03 P
-20/531 T70 n03
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t14-n03
Abstract: 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD14N03R
NTD14N03R/D
t14-n03
14n03
T14 N03
t14n03
369D
NTD14N03R
NTD14N03RG
NTD14N03RT4
NTD14N03RT4G
DSA0032463
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MOSFET n03
Abstract: T70 N03 t70n03 70N03
Text: NTD70N03R Power MOSFET 70 Amps, 25 Volts N−Channel DPAK Features http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge 70 AMPERES, 25 VOLTS RDS(on) = 5.6 mW (Typ)
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NTD70N03R
2500/Tape
NTD70N03R/D
369AA
NTD70N03R/D
MOSFET n03
T70 N03
t70n03
70N03
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