IRFPC50A
Abstract: No abstract text available
Text: PD- 91898 IRFPC50A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50A
O-247AC
Fac10)
IRFPC50A
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 0.60 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Electrically Equivalent to IRFPC50
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SHD218513
SHD218513A
SHD218513B
IRFPC50
1/W54)
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Untitled
Abstract: No abstract text available
Text: PD- 91898 IRFPC50A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50A
O-247AC
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218513 SHD218513A SHD218513B TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 600 Volt, 0.60 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Electrically Equivalent to IRFPC50
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SHD218513
SHD218513A
SHD218513B
IRFPC50
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IRFPC50
Abstract: SHD218513 SHD218513A SHD218513B
Text: SHD218513 SHD218513A SHD218513B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 747, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 600 Volt, 0.60 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Electrically Equivalent to IRFPC50
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SHD218513
SHD218513A
SHD218513B
IRFPC50
IRFPC50
SHD218513
SHD218513A
SHD218513B
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IRFPC50A
Abstract: No abstract text available
Text: PD- 91898 IRFPC50A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50A
O-247AC
12-Mar-07
IRFPC50A
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035H
Abstract: IRFPE30
Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50APbF
O-247AC
12-Mar-07
035H
IRFPE30
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035H
Abstract: IRFPE30
Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50APbF
O-247AC
IRFPE30
035H
IRFPE30
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035H
Abstract: IRFPE30 4.5V TO 100V INPUT REGULATOR
Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50APbF
O-247AC
035H
IRFPE30
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRFPC50APbF
O-247AC
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω
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IRFPC50LC
08-Mar-07
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IRFPC50LC
Abstract: IRFPE30
Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω
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IRFPC50LC
IRFPE30
IRFPC50LC
IRFPE30
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Week 1233
Abstract: diode lt 247 marking code 11A IRFPC50LC IRFPE30
Text: Previous Datasheet Index Next Data Sheet PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFPC50LC
stanFPE30
Week 1233
diode lt 247
marking code 11A
IRFPC50LC
IRFPE30
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IRFPC50LC
Abstract: IRFPE30
Text: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω
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IRFPC50LC
12-Mar-07
IRFPC50LC
IRFPE30
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
11-Mar-11
IRFPC50A
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC
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IRFPC50,
SiHFPC50
O-247AC
O-220AB
O-247AC
O-218
2011/65/EU
2002/95/EC.
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)
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IRFPC50A,
SiHFPC50A
2002/95/EC
O-247AC
O-247AC
IRFPC50APbF
11-Mar-11
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SiHFPC50LC
Abstract: IRFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFPC50LC,
SiHFPC50LC
O-247
18-Jul-08
IRFPC50LC
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IRFPC50LC
Abstract: SiHFPC50LC
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFPC50LC,
SiHFPC50LC
O-247
18-Jul-08
IRFPC50LC
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Untitled
Abstract: No abstract text available
Text: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247
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IRFPC50LC,
SiHFPC50LC
12-Mar-07
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IRFPC50A
Abstract: No abstract text available
Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFPC50A,
SiHFPC50A
O-247
18-Jul-08
IRFPC50A
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