Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET IRF44 Search Results

    MOSFET IRF44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF4435

    Abstract: IR*435 MS-012AA
    Text: PD- 94243 IRF4435 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF IRF4435 IRF4435 IR*435 MS-012AA

    TA17425

    Abstract: IRF440 TB334
    Text: IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS ON = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF IRF440 O-204AE TB334 TA17425. TA17425 IRF440 TB334

    IRF4401

    Abstract: IRF440 IRF44
    Text: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 0372A IRF440 O-204AA/AE) --TO-204AA IRF4401 IRF440 IRF44

    Untitled

    Abstract: No abstract text available
    Text: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 0372A IRF440 O-204AA/AE) O-204AA

    IRF4401

    Abstract: IRF440
    Text: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF440 O-204AA/AE) parame252-7105 IRF4401 IRF440

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    Untitled

    Abstract: No abstract text available
    Text: SFF440J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 8 AMP N-Channel Power MOSFET 500 Volts 0.86 DESIGNER’S DATA SHEET Part Number / Ordering Information1/


    Original     		PDF SFF440J SFF440 O-257 F00087B O-254

    Untitled

    Abstract: No abstract text available
    Text: SFF440J Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 8 AMP N-Channel Power MOSFET 500 Volts 0.86 Ω DESIGNER’S DATA SHEET Part Number / Ordering Information1/


    Original     		PDF SFF440J IRF440 SFF440 F00087B O-254 O-257

    irf630 irf640

    Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
    Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший


    Original     		PDF 220AB 0RFP25N05 RFP50N05 RFP22N10 RFP40N10 IRFP450 IRFP460 IRFPG40 IRF9510 irf630 irf640 IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRF440

    Abstract: SFF440C 0-85Q
    Text: Sspii PRELIMINARY SFF440C SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■


    OCR Scan     		PDF 670-SSDI SFF440C IRF440 O-254C O-254 F00093 SFF440C 0-85Q

    IRF440

    Abstract: SFF440
    Text: §s§i PRELIMINARY SFF440 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Datasheet FEATURES: • • • • • • •


    OCR Scan     		PDF SFF440 670-SSDI IRF440 33BtJXff F00083 SFF440

    IRF440

    Abstract: SFF440M
    Text: PRELIMINARY A SFF440M /SFF440Z SOLID STATE DEVICES, INC — 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 8 AMP 500 VOLTS 0.85Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate


    OCR Scan     		PDF 670-SSDI IRF440 SFF440M /SFF440Z O-254 O-254Z O-254Z

    it8585

    Abstract: No abstract text available
    Text: A P P LIC A T IO N NO TE 976A Understanding and Using Power MOSFET Reliability Data by Steve Clemente and Ken Teasdale Abstract It could reasonably be argued that a design is not complete until its long term performance is known. Design engineers will only be able to calculate


    OCR Scan     		PDF AN-976A it8585

    IRF440

    Abstract: K120 SFF440J
    Text: « S ir a | SFF440J SOLID STATE DEVICES, INC CA 14849 Firestone Boulevard - La Mirada, 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 8 AMP 500 VOLTS 0.86Q N-CHANNEL POWER MOSFET | D e s ig n e r’s Data S h eet FEATURES: • Rugged construction with poly silicon gate


    OCR Scan     		PDF SFF440J 670-SSDI IRF440 O-257 F00087 K120 SFF440J

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed


    OCR Scan     		PDF IRF440 97A-01 97A-03

    irf441

    Abstract: IRF440 IRF44 IRF442 IRF4431 IRF443 mosfet irf44
    Text: Standard Power MOSFETs - - IRF440, IRF441, IRF442, IRF443 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Fïeld-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E 7 A and 8 A, 450 V - 500 V


    OCR Scan     		PDF IRF440, IRF441, IRF442, IRF443 IRF443 RF440 irf441 IRF440 IRF44 IRF442 IRF4431 mosfet irf44

    f441

    Abstract: IRF440 HARRIS 440r
    Text: 2 HARRIS IRF440/441/442/443 IRF440R/441 R/442R/443R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 7A and 8 A, 4 5 0 V - 5 0 0V • rQ s(on = 0 .8 5 0 and 1 .1 0 SOURCE • Single Pulse A valanche Energy R ated*


    OCR Scan     		PDF IRF440/441/442/443 IRF440R/441 R/442R/443R 75BVDs FIGURE14b. f441 IRF440 HARRIS 440r

    IRF440

    Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
    Text: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times


    OCR Scan     		PDF S13ci IRF440/441/442/443 IRF440 IRF441 IRF442 IRF443 DDD511B DDD5141 IRF44 mosfet 441 7964 mosfet

    KAG TRANSISTOR

    Abstract: No abstract text available
    Text: MOTOROLA IRF440 IRF441 TECHNICAL DATA IM-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on •d IRF440 500 V 0.85 n 8.0 A T h e s e T M O S P o w e r FETs are d es ig n e d fo r high v o ltag e, high sp e ed p o w e r s w itch in g a p p licatio n s such as s w itch in g regulators,


    OCR Scan     		PDF IRF440 IRF441 KAG TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: HE D | M5SS45S INTERNATIONAL G ütm öS 7 | Data Sheet No. PD-9.372F T “ * 7 - / J RECTIFIER INTE RNATIONAL- RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF44Q IRF441 IRF442 :r N-CHANNEL IRF443 500 Volt, 0.85 Ohm HEXFET TO-204ÂA TO-3) Hermetic Package


    OCR Scan     		PDF M5SS45S IRF44Q IRF441 IRF442 IRF443 O-204Ã T-39-13 G-166

    IRF449

    Abstract: IRF448 1F44S L1207 A3810 M gogil 300UJ diode duj D5102
    Text: H E D I 4 A S S 4 S 5 a a O cU cf O b | Data Sheet No. PD-9.572A INTERNATIONAL RECTIFIER 4 INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS iJ IRF448 IRF44S N-CHANNEL 500 Volt, 0.60 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		PDF O-204AA G-173 IRF448, IRF449 MflSS452 T-39-13 G-174 IRF448 1F44S L1207 A3810 M gogil 300UJ diode duj D5102

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit