SHD230303
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD230303 TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD230303
IRF230
250mA
SHD230303
030Typ
LCC-28T
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SHD230303
Abstract: IRF230
Text: SENSITRON SEMICONDUCTOR SHD230303 TECHNICAL DATA DATA SHEET 698, REV. - DUAL HERMETIC POWER MOSFET N-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRF230 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD230303
IRF230
80asheet
SHD230303
IRF230
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Untitled
Abstract: No abstract text available
Text: IRF230 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55
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IRF230
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Untitled
Abstract: No abstract text available
Text: IRF230R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D)6 @Temp (øC)100 IDM Max (@25øC Amb)36 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ
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IRF230R
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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IRF150 MOSFET AMP circuit
Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given
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IRF150
IRF150 MOSFET AMP circuit
forsythe
MOSFET IRF150
1. A 48V, 200A Chopper For Motor S. Clemente
A2JA
Chopper For Motor S. Clemente ant B. Pelly
IRF9130
R. Severns "Controlling Oscillation in
AN942
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IAf630
Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p
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RRF620
2SK755
2SK782
TX124
IRFJ220
SFN02804
SFN02814
SFN204A3
YTF220
YTF620
IAf630
RS630
BUZ73
sfn02204
tx134
sgsp567
SGSP367
2SK400
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irf630 irf640
Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Text: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший
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220AB
0RFP25N05
RFP50N05
RFP22N10
RFP40N10
IRFP450
IRFP460
IRFPG40
IRF9510
irf630 irf640
IRF250N
Irfp250 irfp460
IRF6404
MOSFET IRF460
irf460 to-247
FET IRFP450
IRF510 mosfet irf640
MOSFET IRF460 TO 247
MOSFET IRF
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IRF230
Abstract: No abstract text available
Text: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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IRF230
204AA)
00A/ms
IRF230
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IRF230
Abstract: No abstract text available
Text: IRF230 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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IRF230
204AA)
IRF230"
IRF230
IRF230-JQR-B
IRF230SMD
IRF230SMD-JQR-B
IRF230X
O276AB)
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irf230
Abstract: IRF2301 irf232
Text: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF230,
IRF231,
IRF232,
IRF233
TA17412.
irf230
IRF2301
irf232
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IRF232
Abstract: IRF230 IRF231 IRF233 TB334
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF230,
IRF231,
IRF232,
IRF233
IRF232
IRF230
IRF231
IRF233
TB334
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IRF230
Abstract: JANTX2N6758 JANTXV2N6758
Text: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A The HEXFET technology is the key to International
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90334F
IRF230
JANTX2N6758
JANTXV2N6758
O-204AA/AE)
MIL-PRF-19500/542]
paralleli252-7105
IRF230
JANTX2N6758
JANTXV2N6758
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Untitled
Abstract: No abstract text available
Text: PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number IRF230 BVDSS 200V RDS(on) 0.40Ω ID 9.0A The HEXFET technology is the key to International
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90334F
IRF230
JANTX2N6758
JANTXV2N6758
O-204AA/AE)
MIL-PRF-19500/542]
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IRF230
Abstract: SFF230
Text: SsDI PRELIMINARY SFF230 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 9 AMP 200 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • • • • • • •
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670-SSDI
IRF230
SFF230
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MOSFET IRF230
Abstract: IRF230 SFF230-28
Text: S I — PRELIMINARY SFF230-28 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 9 AMP 200 VOLTS 0.40&2 N-CHANNEL POWER MOSFET Designer’s Data Sheèt FEATURES: • • • • •
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670-SSDI
SFF230-28
IRF230
MOSFET IRF230
SFF230-28
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92 0151
Abstract: MTM15N20
Text: MOTOROLA SC XSTRS/R F bflE D • b3b?254 DDIfimD OfiT ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA IRF230 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate Y T h is T M O S P o w e r FET is d e s ig n e d f o r lo w
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O-204
97A-01
97A-03
92 0151
MTM15N20
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IRF231
Abstract: irf233 irf230 irf232
Text: IRF230, IRF231, IRF232, IRF233 HARRIS S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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PDF
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IRF230,
IRF231,
IRF232,
IRF233
TA17412.
RF232,
IRF231
irf233
irf230
irf232
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ZO 150
Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101
Text: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S | ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode
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IRF230,
IRF231,
IRF232,
IRF233
50V-200V
IRF232
IRF233
IF230
ZO 150
dg1u
IRF230
1RF232
IRF231
IRF23
ic l00a
S101
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA IRF230 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate T M O S This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid
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IRF230
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TO-254
Abstract: T0-204 IRF450 equivalent
Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS
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2N6756
2N6758
2N6760
2N6762
2N6764
2N6766
2N6768
2N6770
2N6788
2N6790
TO-254
T0-204
IRF450 equivalent
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k 3561 MOSFET
Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con
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DK101
O-22QAB
k 3561 MOSFET
TP5N05
BUZ80a equivalent
p20n50
P12N08
nx 9120
TP3N40
FD1Z0
IRFZ22 mosfet
th15n20
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
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