OM803
Abstract: OM9007SC OM9008SC OM9009SC OM9010SC static characteristics of mosfet
Text: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC MO-078 PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET And Fast Recovery Power Rectifier FEATURES • • • • • Uncommitted MOSFET And Rectifier In One Package
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OM9007SC
OM9008SC
OM9009SC
OM9010SC
MO-078
OM803
300msec,
OM9007SC
OM803
OM9008SC
OM9009SC
OM9010SC
static characteristics of mosfet
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OM9001SS
Abstract: OM9002SS OM9003SS OM9004SS 2 Amp zener diode
Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier
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OM9001SS
OM9003SS
OM9002SS
OM9004SS
MIL-S-19500,
perf50
OM9003SS
OM9004SS
2 Amp zener diode
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IRSF3012
Abstract: IPS021 G10 zener diode Thermal Shut Down Functioned MOSFET AN-994 IPS021L IRSF3011 IRSF3011L II A2 zener diode
Text: Data Sheet No.PD 60133-H IRSF3011 NOTE: For new designs, we recommend IR’s new products IPS021 and IPS021L FULLY PROTECTED POWER MOSFET SWITCH Features • · · · · · · · Product Summary Extremely rugged for harsh operating environments Over-temperature protection
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60133-H
IRSF3011
IPS021
IPS021L)
IRSF3011
tem10)
IRSF3012
G10 zener diode
Thermal Shut Down Functioned MOSFET
AN-994
IPS021L
IRSF3011L
II A2 zener diode
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k3226
Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
Text: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.
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T-39-11
4fl5545H
IRF234,
IRF235
k3226
LD 7751 os
lg washing machine control circuit
lg washing machine
irf234 n
washing machine lg
IRF234
F234
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Untitled
Abstract: No abstract text available
Text: A d van ced Power MOSFET IR L R /U 1 3 0 A FEATURES B V DSS - 100 V ^D S o n = 0 .1 2 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 13 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK
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Untitled
Abstract: No abstract text available
Text: IRL640 A d van ced Power MOSFET FEATURES BV DSS = 200 V ♦ Logic-Level Gate Drive - 0.1 8 fl ♦ Avalanche Rugged Technology ^D S o n ♦ Rugged Gate Oxide Technology In = 1 8 A ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area
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IRL640
O-220
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Untitled
Abstract: No abstract text available
Text: IRL640S A d van ced Power MOSFET FEATURES B V dss = 200 V ^D S o n = 0 .1 8 f l ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 18 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 150°C Operating Temperature
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IRL640S
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Untitled
Abstract: No abstract text available
Text: IRLR/U210A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRLR/U210A
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Untitled
Abstract: No abstract text available
Text: IRLR210 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRLR210
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Untitled
Abstract: No abstract text available
Text: IRLW/I620A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature
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IRLW/I620A
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Untitled
Abstract: No abstract text available
Text: IR L R /U 110A A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .4 4 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK
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Untitled
Abstract: No abstract text available
Text: IRLR220 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRLR220
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Untitled
Abstract: No abstract text available
Text: IRLR/U220A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CD Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V
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IRLR/U220A
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Untitled
Abstract: No abstract text available
Text: IRL610S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . o ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology CO CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature
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IRL610S
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Untitled
Abstract: No abstract text available
Text: Advanced Power MOSFET IRL640 FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive = 0.1 8Q ♦ Avalanche Rugged Technology ^ D S o n ♦ Rugged Gate Oxide Technology lD = 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area
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IRL640
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Untitled
Abstract: No abstract text available
Text: Advanced Power MOSFET IRL640A FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive = 0.1 8Q ♦ Avalanche Rugged Technology ^ D S o n ♦ Rugged Gate Oxide Technology lD = 18 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area
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IRL640A
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D235A
Abstract: No abstract text available
Text: IR L R /U 110 A Advanced Power MOSFET FEATURES - 100 V ^ D S o n = 0 .4 4 Q B ^D S S ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 100V
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Untitled
Abstract: No abstract text available
Text: IRL520S A d van ced Power MOSFET FEATURES B V DSS - 100 V ^D S o n = 0 .2 2 a o II ♦ Lower Input Capacitance ho ♦ Rugged Gate Oxide Technology CD ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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IRL520S
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Untitled
Abstract: No abstract text available
Text: IRLR210 Advanced Power MOSFET FEATURES B ^D S S - ♦ Avalanche Rugged Technology 200 V 1.5Q ♦ Rugged Gate Oxide Technology ^ D S o n = ♦ Lower Input Capacitance lD = 2.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 200V
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IRLR210
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Untitled
Abstract: No abstract text available
Text: IRL610S Advanced Power MOSFET FEATURES B^DSS - ♦ Avalanche Rugged Technology CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology 200 V 1.5Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature
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IRL610S
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2184A
Abstract: No abstract text available
Text: IRF654 Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V
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IRF654
2184A
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ls92
Abstract: MOSFET 20V
Text: IRL520S Advanced Power MOSFET FEATURES - 100 V ^ D S o n = 0.22Q B ^D S S ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD ♦ Improved Gate Charge ♦ Extended Safe Operating Area 9-2 A = D2-PAK ♦ 175°C Operating Temperature
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IRL520S
ls92
MOSFET 20V
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Untitled
Abstract: No abstract text available
Text: IRF634 Advanced Power MOSFET FEATURES - 250 V ♦ Rugged Gate Oxide Technology ^ D S o n = 0.45Q ♦ Lower Input Capacitance lD = 8.1 A B ^D S S ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V
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IRF634
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Untitled
Abstract: No abstract text available
Text: IRFS244 Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .2 8 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 0 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V
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IRFS244
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