09n90
Abstract: 09N90C ssm09n90cgw marking codes transistors SSs 09n9 09n90cgw
Text: SSM09N90CGW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 900V R DS ON 1.4Ω ID 7.6A DESCRIPTION The SSM09N90CGW acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC
|
Original
|
PDF
|
SSM09N90CGW
SSM09N90CGW
O-247
09n90
09N90C
marking codes transistors SSs
09n9
09n90cgw
|
FQA6N90C
Abstract: F109
Text: QFET FQA6N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQA6N90C
FQA6N90C
F109
|
mosfet for 900V, 6A
Abstract: No abstract text available
Text: SSFP6N90 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 900V Simple Drive Requirement ID25 = 6A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
|
Original
|
PDF
|
SSFP6N90
00A/s
di/dt200A/S
width300S;
mosfet for 900V, 6A
|
mosfet for 900V, 6A
Abstract: F109 FQA6N90C
Text: QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQA6N90C
mosfet for 900V, 6A
F109
|
2sk3532
Abstract: mosfet for 900V, 6A 2SK3532-01MR
Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3532-01MR 900V/2.5Ω/6A 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current
|
Original
|
PDF
|
2SK3532-01MR
00V/2
O-220F
25unless
Tch150
MT5F12611
2sk3532
mosfet for 900V, 6A
2SK3532-01MR
|
2SK3531-01
Abstract: No abstract text available
Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3531-01 900V/2.5Ω/6A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current
|
Original
|
PDF
|
2SK3531-01
00V/2
O-220
25unless
Tch150
MT5F12610
2SK3531-01
|
Untitled
Abstract: No abstract text available
Text: QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
PDF
|
FQA6N90C
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N90 Preliminary 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
|
Original
|
PDF
|
12N90
O-220
12N90
O-220F1
QW-R502-593
|
Untitled
Abstract: No abstract text available
Text: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
|
Original
|
PDF
|
AOTF6N90
AOTF6N90
AOTF6N90L
O-220F
|
Untitled
Abstract: No abstract text available
Text: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
|
Original
|
PDF
|
AOTF6N90
AOTF6N90
AOTF6N90L
O-220F
Drain-Sou90
|
Untitled
Abstract: No abstract text available
Text: AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
|
Original
|
PDF
|
AOTF6N90
AOTF6N90
AOTF6N90L
O-220F
|
2SK3676-01L
Abstract: No abstract text available
Text: Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 2SK3676-01L,S,SJ 900V/2.5Ω/6A 1) Package T-PACK L ・・・See Page 2/4 S ・・・See Page 3/4 SJ ・・・See Page 4/4 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)
|
Original
|
PDF
|
2SK3676-01L
00V/2
25unless
MT5F12623
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Preliminary Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a
|
Original
|
PDF
|
6N90Z
6N90Z
O-220
O-262
QW-R502-974
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a
|
Original
|
PDF
|
6N90Z
6N90Z
6N90Zat
QW-R502-953
|
|
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N90 Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N90 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a
|
Original
|
PDF
|
O-220F
O-220F1
O-220
O-262
QW-R502-974
|
Untitled
Abstract: No abstract text available
Text: SSS6N90A Advanced Power MOSFET FEATURES BVqss ~ 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 t-iA Max. @ VDS= 900V
|
OCR Scan
|
PDF
|
SSS6N90A
300nF
|
Untitled
Abstract: No abstract text available
Text: SSP6N90A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |aA Max. @ yos = 900V ■ Low RDS(ON) : 1.829 Q. (Typ.)
|
OCR Scan
|
PDF
|
SSP6N90A
|
2030 mosfet
Abstract: No abstract text available
Text: SSF6N90A Advanced Power MOSFET FEATURES bvdss • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA M ax. @ VOS= 900V ■ Low Rds<ON) : 1.829 £2 (Typ.)
|
OCR Scan
|
PDF
|
SSF6N90A
2030 mosfet
|
Untitled
Abstract: No abstract text available
Text: SSF9N90A Advanced Power MOSFET FEATURES BV0ss ~ 900 V ^DS on = 1 .4 Q lD = 6 A • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ ■ Extended Safe Operating Area Lower Leakage Current : 25 p A (M a x ) @ VDS = 900V
|
OCR Scan
|
PDF
|
SSF9N90A
|
LT 428 mosfet
Abstract: No abstract text available
Text: SSH6N90A Advanced Power MOSFET FEATURES B ^ dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 900V
|
OCR Scan
|
PDF
|
SSH6N90A
LT 428 mosfet
|
SSH7N90A
Abstract: No abstract text available
Text: SSH7N90A Advanced Power MOSFET FEATURES B ^ Lower Input Capacitance ^ D S o n = • Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V ■ Low RDS(0N) : 1.247 Q (Typ.) -4 ■ 900 V - 1.8 Q > Rugged Gate Oxide Technology
|
OCR Scan
|
PDF
|
SSH7N90A
SSH7N90A
|
Untitled
Abstract: No abstract text available
Text: SSF9N90A Advanced Power MOSFET FEATURES • Lower Input Capacitance ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25|aA Max. @ VDS = 900V ■ Low R0S(on) •' 0.938 Q (Typ.) - 900 V ^DS(on) = 1.4 n II Avalanche Rugged Technology
|
OCR Scan
|
PDF
|
SSF9N90A
|
Untitled
Abstract: No abstract text available
Text: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)
|
OCR Scan
|
PDF
|
SSP6N90A
003b32fl
O-220
7Tb4142
DD3b33D
|
SSF7N90A
Abstract: D-0402
Text: SSF7N90A Advanced Power MOSFET FEATURES = 9 0 0 R û S o n = 1 .8 5 A b • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 fiA (Max.) @ VDS= 900V
|
OCR Scan
|
PDF
|
SSF7N90A
7Tb4142
GG402S5
003b333
003b33M
D03b335
SSF7N90A
D-0402
|
