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    MOSFET BTA Search Results

    MOSFET BTA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET BTA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    Untitled

    Abstract: No abstract text available
    Text: FDD850N10LD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 15.7 A, 75 mΩ Features Description • RDS(on) = 61 mΩ ( Typ.)@ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD850N10LD

    Untitled

    Abstract: No abstract text available
    Text: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		PDF FDD1600N10ALZD

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171


    OCR Scan     		PDF ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]

    Untitled

    Abstract: No abstract text available
    Text: [ Ordering nufnb^rEN N 6981 | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 SAWYD DC / DC Converter Applications Features Package Dimensions • Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006) 2171


    OCR Scan     		PDF CPH5805 MCH3412) SBS006) CPH5805]

    ufn240

    Abstract: 25jo TH 2190 mosfet
    Text: POWER MOSFET TRANSISTORS UFN240 UFN242 UFN243 200 Volt, 0.2 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF UFN240 UFN242 UFN243 UFN241 UFN242 25jo TH 2190 mosfet

    12W 04 SMD MOSFET

    Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
    Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers


    OCR Scan     		PDF NMT90Q/TACS PF0010 2SJ291 220AB 2SJ192 2SJ293 220FM 2SJ294 2SJ29S 2SJ296 12W 04 SMD MOSFET PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi

    Untitled

    Abstract: No abstract text available
    Text: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package


    OCR Scan     		PDF OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST O-257AA MIL-S-19500,

    C549B

    Abstract: C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Semiconductor’s part numbers, along with the Data Book in which they appear. For MOSFET page references, see the MOSFET Device Index on pages 5 in this book. 1 5KA6.8 thru 1.5KA43A .Zener/TVS


    OCR Scan     		PDF 5KA43A 5KE440CA 1N746 1N759 1N957 UF4001 UF4007 UF5400 UF5408 UG06A C549B C556A POWER MOSFET DATA BOOK GFB50N03 GUR460 List of rectifier MOSFET BC337 1N414* zener MOSFET BOOK k mbrf10

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 in t e r r ii Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative U ltraFE T process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    8D-13

    Abstract: No abstract text available
    Text: _ Si9422DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product VostV Rds ON) <ß) Id (A) 200 0 .420 @ V GS = 10 V ± 1 .7 D O S O -8 d: 13 0 Œ Œ CZ ID 0 XI D Z3 0 <J| Top View N-Channel MOSFET RATIN G S


    OCR Scan     		PDF Si9422DY i9422DY ov-98 8D-13

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6961 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features Package Dimensions • C om posite type with a P-C hannel Sillicon M O SFE T unit : mm M C H 3308 and a Schottky B arrier D iode (SB S006M ) 2 1 9 5 contained in one package facilitating high-density


    OCR Scan     		PDF ENN6961 S006M MCH5802]

    M57918L

    Abstract: M57924L M57919L JS225010 JS224510 M57918 D2245 JD225005 d22-5003 M57924
    Text: POIilEREX I NC L.ME D mn/Bta • 7 2 c1 4 b E l 0D0L.Sb7 GflT * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 FETMOD MOSFET POWER MODULES


    OCR Scan     		PDF i4b21 BP107, JS524575/JS525075 JS224510/JS225010 D224503/J D225003 M57918L M57924L M57919L JS225010 JS224510 M57918 D2245 JD225005 d22-5003 M57924

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6973 | _ N-Channel and P-Channel Silicon MOSFETs ISAfÊYO 1 MCH6618 / Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • The MCH6618 encapsulates an N-channel MOSFET


    OCR Scan     		PDF ENN6973 MCH6618 MCH6618 MCH661B]

    FSV 052

    Abstract: CA3130T A3130 ICAN-6080 equivalent ic of ca 3130 738R ICAN-6668 IC1 CA3130 CA 3130 SCHEMATIC DIAGRAM
    Text: C A 3130A CA 3130 ¡2 H a r r i s BiMOS Operational Amplifiers with MOSFET Input/C M O S Output A u g u st 1991 Features D escription • MOSFET Input Stage Provides: C A 31 3 0 A and C A 31 3 0 are In te g ra te d -c irc u lt operational am plifiers th a t c o m b in e th e a dvantage o f both C M O S and


    OCR Scan     		PDF A3130 CA3130. FSV 052 CA3130T ICAN-6080 equivalent ic of ca 3130 738R ICAN-6668 IC1 CA3130 CA 3130 SCHEMATIC DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN7007~| P-Channel Silicon MOSFET MCH3307 'SAjiYOi Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • Low ON-resistance. • Ultrahigh-speed switching. 2167A • 2.5V drive. MCH3307] ,0.15 2.0 0.85 1 : Gate


    OCR Scan     		PDF ENN7007~ MCH3307 MCH3307] 900mm2X0

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7008 ] P-Channel Silicon MOSFET MCH3308 ISAtiYOi Ultrahigh-Speed Switching Applications Package Dimensions Features • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2167A • 4 V drive. [MCH3308] 0.85 1 : Gate 2 : Source


    OCR Scan     		PDF ENN7008 MCH3308 MCH3308] 900mm2X0

    ufnd123

    Abstract: UFND120
    Text: POWER MOSFET TRANSISTORS UFND120 100 Volt, 0.3 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Temperature Stability DESCRIPTION


    OCR Scan     		PDF UFND120 UFND123 ufnd123 UFND120

    marking YB

    Abstract: 5LN01SS
    Text: Ordering number : ENN6560[ N-Channel Silicon MOSFET 5LN01SS ISAfiYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. unit : mm 2179 [5LN01SS] 1.4 0.25 0 .1. ¿ ft ' i


    OCR Scan     		PDF ENN6560[ 5LN01SS 5LN01SS] marking YB

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN7009 P-Channel Silicon MOSFET MCH3312 SANYO Ultrahigh-Speed Switching Applications Package Dimensions Features • Low O N -resistance. unit : mm • Ultrahigh-speed switching. 2167A • 4V drive. [M C H 3 3 1 2 ] , Specifications 0.85


    OCR Scan     		PDF ENN7009 MCH3312

    IRFP140

    Abstract: DI 944
    Text: PD-9.442C International S Rectifier IRFP140 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements


    OCR Scan     		PDF IRFP140 O-247 T0-220 O-218 IRFP140 DI 944

    IRFP240

    Abstract: irfp240 ir
    Text: PD-9.444C International S Rectifier IRFP240 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 0.18Q


    OCR Scan     		PDF IRFP240 O-247 T0-220 O-218 IRFP240 irfp240 ir

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6997 ] N-Channel Silicon MOSFET CPH3407 IS A /iY O i Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. . 2.5V drive. unit : mm 2152 A [CPH3407] 2.9 ^ 0 .4 ^ 0. 15.


    OCR Scan     		PDF ENN6997 CPH3407 CPH3407] Ta-25Â

    G-120 C Mosfet

    Abstract: No abstract text available
    Text: IRFW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ~ 0.04 Í2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ 175* »Operating Temperature


    OCR Scan     		PDF IRFW/IZ34A G-120 C Mosfet