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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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Abstract: 900v 2.2a
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and
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9n80
Abstract: 9N90-T3P-T 9N90 9N90L-T3P-T
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90L
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Abstract: TO247 package dissipation 9N90
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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Abstract: w 9n90 220f1 9N90L-T3P-T MOSFET 900V 2A TO-220F1 TO-220-F1
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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AOTF4N90
Abstract: No abstract text available
Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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Abstract: No abstract text available
Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable
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9N90L-T47-T
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Abstract: w 9n90 9N90L-T3P-T 9N90-T3P-T
Text: UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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Abstract: No abstract text available
Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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Abstract: No abstract text available
Text: AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along
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Abstract: 3N90L
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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3N90L-TA3-T
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3N90G-TQ2-R
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Abstract: No abstract text available
Text: AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS on , Ciss and Crss
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N90-E Power MOSFET 3A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N90-E provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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FS2KM18A
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2KM-18A HIGH-SPEED SWITCHING USE FS2KM-18A + • VDSS . 900V • TDS ON (MAX) .7 .3 Q
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Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS5KM-18A HIGH-SPEED SWITCHING USE FS5KM-18A ¡ »VDSS . 900V i • rDS ON (MAX) . 2 .8 0
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Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2UM-18A HIGH-SPEED SWITCHING USE FS2UM-18A m â / / / * V dss . 900V * r o s ON (MAX) . 7 .3 Q
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Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1VS-18A HIGH-SPEED SWITCHING USE FS1VS-18A * • V dss . 900V • ros ON (MAX) . 15.0Í2 • I D . 1A
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Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2UM-18A HIGH-SPEED SWITCHING USE FS2UM-18A OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qw e O , q o- V d s s . 900V rDS ON (MAX) . 7.3Í1
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Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F S 5 V S - 1 8 A HIGH-SPEED SWITCHING USE FS5VS-18A OUTLINE DRAWING L q J w e Q w r o- V d s s . 900V I d . 5A
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FS5VS-18A
O-22QS
71Q-123
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SSS3N90A
Abstract: SSS3N90
Text: SSS3N90A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jA (Max. @ VDS = 900V Low R ds(on) : 4.679 (Typ.) - 900 V
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SSS3N90A
7U4142
Q04DS3Ã
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