9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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irf 540 mosfet
Abstract: IRFM064
Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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0875A
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
IRFM064
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Untitled
Abstract: No abstract text available
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: PD - 96088 IRF7343IPbF HEXFET Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description
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IRF7343IPbF
EIA-481
EIA-541.
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utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
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IRF7343
Abstract: No abstract text available
Text: PD -91709A IRF7343 l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier
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-91709A
IRF7343
EIA-481
EIA-541.
IRF7343
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13003 MOSFET
Abstract: sw 13003 13003 MOSFET transistor transistor sd 13003 MARKING QV 13003 sd sw 13003 A MOSFET CPH5819 MCH3408 SBS006M
Text: Ordering number : ENN7409 CPH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5819 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3408 and a Schottky Barrier Diode (SBS006M) 2171
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ENN7409
CPH5819
MCH3408)
SBS006M)
CPH5819]
13003 MOSFET
sw 13003
13003 MOSFET transistor
transistor sd 13003
MARKING QV
13003 sd
sw 13003 A MOSFET
CPH5819
MCH3408
SBS006M
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C4125
Abstract: single gate "Shottky" Schottky Diode 40V 6A
Text: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the
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KMB6D0NS30QA
100ms
100us
Fig10.
C4125
single gate "Shottky"
Schottky Diode 40V 6A
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Untitled
Abstract: No abstract text available
Text: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW24N40E
O-247
r14525
MTW24N40E/D
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AN569
Abstract: MTW24N40E mosfet transistor 400 volts.100 amperes
Text: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW24N40E
r14525
MTW24N40E/D
AN569
MTW24N40E
mosfet transistor 400 volts.100 amperes
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FQP4N90C
Abstract: FQPF4N90C
Text: FQP4N90C / FQPF4N90C N-Channel QFET MOSFET 900 V, 4.0 A, 4.2 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQP4N90C
FQPF4N90C
FQPF4N90C
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Untitled
Abstract: No abstract text available
Text: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQP9N30
FQP9N30
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary URFP064 Power MOSFET 70A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC URFP064 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching
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URFP064
URFP064
O-247
URFP064L-T47-T
URFP064G-T47-T
QW-R502-752
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AUIRF7343Q
Abstract: AUIRF7343QTR
Text: PD - 96343 AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*
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AUIRF7343Q
AUIRF7343Q
AUIRF7343QTR
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Untitled
Abstract: No abstract text available
Text: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQP9N30
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*
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96343B
AUIRF7343Q
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25N80C
Abstract: No abstract text available
Text: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions
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25N80C
ISOPLUS220
E72873
25N80C
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Untitled
Abstract: No abstract text available
Text: PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*
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96343B
AUIRF7343Q
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4n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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O-252
O-220
QW-R502-479
4n90
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IRF P CHANNEL MOSFET
Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
Text: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET
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IRF7343QPBF
EIA-481
EIA-541.
IRF P CHANNEL MOSFET
MOSFET 150 N IRF
IRF7343QPBF
B9 mosfet datasheet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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QW-R502-479
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4N90
Abstract: mosfet 740 4n90 MOSFEt
Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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O-252
O-220
QW-R502-479
4N90
mosfet 740
4n90 MOSFEt
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mosfet 740
Abstract: 4n90
Text: UNISONIC TECHNOLOGIES CO., LTD 4N90 Preliminary Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the
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O-252
O-220
QW-R502-479
mosfet 740
4n90
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