alc 885
Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
Text: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz
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MRF173/D
MRF173
alc 885
"RF MOSFETs"
1N5925A
AN211A
AN721
MRF173
VK200
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FSR510
Abstract: 19v 4.74A package marking 220-6L 19V DC 90w 90w flyback 12V ENERGY LIGHT CIRCUIT DIAGRAM simple 12v to 19v converter FAN6300 JESD22-A114 FSR510R09GZ
Text: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller Built-In Ultra-Low RDS-ON MOSFET
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FSR510
FSR510
19v 4.74A
package marking 220-6L
19V DC 90w
90w flyback
12V ENERGY LIGHT CIRCUIT DIAGRAM
simple 12v to 19v converter
FAN6300
JESD22-A114
FSR510R09GZ
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FSR510
Abstract: 19v 4.74A 90w flyback 19V DC 90w 12V ENERGY LIGHT CIRCUIT DIAGRAM LPC TPM package marking 220-6L simple 12v to 19v converter FAN6300 JESD22-A114
Text: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller Built-In Ultra-Low RDS-ON MOSFET
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FSR510
FSR510
19v 4.74A
90w flyback
19V DC 90w
12V ENERGY LIGHT CIRCUIT DIAGRAM
LPC TPM
package marking 220-6L
simple 12v to 19v converter
FAN6300
JESD22-A114
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AN749
Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
AN749
mrf154 amplifier
Fair-Rite bead
MC1723
MRF154
1N4148
1N5362
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QSC60xx
Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
Text: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low
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NUS6189MN
NUS6189MN/D
QSC60xx
QUALCOMM QFN
QFN22
NUS6189MNTWG
qsc60
QUALCOMM Reference design
Drive Base BJT
QFN-22
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RCA 618
Abstract: marking 618
Text: FDN5618P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.200 Ω @ VGS = –10 V
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FDN5618P
RCA 618
marking 618
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hf class AB power amplifier mosfet
Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Text: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
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MRF136/D
MRF136
hf class AB power amplifier mosfet
Triode 805
motorola diode 8296
1N5925A
AN211A
AN215A
AN721
MRF136
J973
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Mosfet J49
Abstract: MRF171 MRF171A VK200 ADC 0824
Text: Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz
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MRF171A/D
MRF171A
Mosfet J49
MRF171
MRF171A
VK200
ADC 0824
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV65XPE
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XPEA
O-236AB)
AEC-Q101
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MRF160
Abstract: VK200
Text: Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz Performance
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MRF160/D
MRF160
MRF160
VK200
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fdn5618p
Abstract: No abstract text available
Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V
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FDN5618P
fdn5618p
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FDN5618P
Abstract: No abstract text available
Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V
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FDN5618P
FDN5618P
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FDN5618P
Abstract: No abstract text available
Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V
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FDN5618P
FDN5618P
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2955E
Abstract: TD 1409
Text: MMFT2955E Preferred Device Power MOSFET 1 Amp, 60 Volts P–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.
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MMFT2955E
2955E
TD 1409
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MRF151G hf amplifier
Abstract: MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g
Text: Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF151G/D
MRF151G
MRF151G hf amplifier
MRF151G
MRF151G Voltage min-max
ferrite 1 phase transformer 0.14 ratio 120 watt
G10 zener diode
mrf151g 300
TOROIDS Design Considerations
AN211A
rf amplifier circuit mrf151g
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ZVN4306A TO-5
Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Text: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage
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100mA/div.
50ns/div.
x15mm
FMMT618/718
700mW.
500mA/div.
100ns/div.
ZVN4306A TO-5
ZTX618
power supply IRF830 APPLICATION
mosfet driver with npn transistor
high gain PNP POWER TRANSISTOR SOT23
npn high voltage transistor 500v sot23
zvn4306
AN18
irf830 datasheet
pnp 500v
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Untitled
Abstract: No abstract text available
Text: RCD050N20 Data Sheet 10V Drive Nch MOSFET RCD050N20 Structure Silicon N-channel MOSFET Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple.
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RCD050N20
SC-63)
OT-428>
R1120A
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mrf166w application note
Abstract: MRF166W
Text: Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
MRF166W
mrf166w application note
MRF166W
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"RF MOSFETs"
Abstract: AN211A motorola diode 8296 AN721 1N5925A MRF173CQ VK200
Text: Order this document by MRF173CQ/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF173CQ N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of
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MRF173CQ/D
MRF173CQ
"RF MOSFETs"
AN211A
motorola diode 8296
AN721
1N5925A
MRF173CQ
VK200
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planar transformer theory
Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
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MRF136Y/D
MRF136Y
planar transformer theory
TH D560
AN721
18006-1-Q1
AN215A
mosfet HF amplifier
motorola diode 8296
1N4740
319B
AN211A
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MRF141G
Abstract: u 172 954 zener AN211A
Text: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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MRF141G/D
MRF141G
MRF141G
u 172
954 zener
AN211A
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d3n06
Abstract: MMDF3N06HDR2
Text: MMDF3N06HD Preferred Device Advance Information Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature low RDS on and true logic level performance. Dual MOSFET devices are designed for use in low voltage, high speed switching applications where power
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MMDF3N06HD
r14525
MMDF3N06HD/D
d3n06
MMDF3N06HDR2
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c617 DIODE
Abstract: No abstract text available
Text: PD - 9.1258C International I R Rectifier IRLML2803 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching V dss =
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OT-23
1258C
IRLML2803
c617 DIODE
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