N mosfet 250v 600A
Abstract: mosfet 600V 100A ST mosfet 600v MOSFET Module mosfet j 114 QJQ0224005 M5 DIODE mosfet low idss mosfet 600V 100A mosfet 600a 600v
Text: QJQ0224005 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 240A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: ? ?
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QJQ0224005
FS40SM-5
N mosfet 250v 600A
mosfet 600V 100A ST
mosfet 600v
MOSFET Module
mosfet j 114
QJQ0224005
M5 DIODE
mosfet low idss
mosfet 600V 100A
mosfet 600a 600v
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N mosfet 250v 600A
Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •
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QJQ0220001
FS40SM-5
N mosfet 250v 600A
mosfet 200A
mosfet 600V 100A
mosfet 600v
"MOSFET Module"
mosfet 100a 600v
3150 mosfet
QJQ0220001
mosfet low idss
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N mosfet 250v 600A
Abstract: No abstract text available
Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A
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0000W,
0400W,
4500W,
5600W
00V/0
20kHz
63200-E-201408-1000
N mosfet 250v 600A
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7272
Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
Text: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed
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QJS0660001
Amperes/600
FK18SM-12
-600A/
7272
QJS0660001
MOSFET "CURRENT source"
power mosfet 600v 600A
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P-Channel mosfet 400v to220
Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages
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CM600HA-5F
CM450HA-5F
CM350DU-5F
CM200TU-5F
CT60AM-18B
P-Channel mosfet 400v to220
IGBT DRIVE 500V 300A
400V switching transistor 0,3A mosfet
forklift
Microwave Oven Inverter Control IC
apec
CT60AM-18B
igbt 100a 150v
ct60am
Transistor Mosfet N-Ch 30V
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Untitled
Abstract: No abstract text available
Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)
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APT94N60L2C3
APT94N60L2C3G*
O-264
APT94N60L2C3
75DQ60
APT30DF60
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APT94N60L2C3G
Abstract: No abstract text available
Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Dual die (parallel)
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APT94N60L2C3
APT94N60L2C3G*
O-264
75DQ60
APT30DF60
APT94N60L2C3G
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Untitled
Abstract: No abstract text available
Text: APT106N60B2C6 600V 106A 0.035 COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel) G • Popular T-MAX Package
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APT106N60B2C6
O-247
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apt60dq60
Abstract: APT106N60B2C6
Text: APT106N60B2C6 600V 106A 0.035Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package
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APT106N60B2C6
O-247
apt60dq60
APT106N60B2C6
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APTM120U10SA
Abstract: No abstract text available
Text: APTM120U10SA Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTM120U10SA
APTM120U10SA
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Untitled
Abstract: No abstract text available
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated
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APT94N65B2C3
APT94N65B2C3G*
APT94N65B2C3S
Continuo50
O-247
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MOSFET circuit welding INVERTER
Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
Text: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES
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AN-7528
Abstract: 50us60s TA49468 mosfet 600V 50A 25A10 an7528
Text: tm FFH50US60S Features 50A, 600V, Stealth Diode • Stealth Recovery, Trr = 113 ns @ IF = 50 A The FFH50US60S is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC), low VF and soft
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FFH50US60S
FFH50US60S
AN-7528
50us60s
TA49468
mosfet 600V 50A
25A10
an7528
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Untitled
Abstract: No abstract text available
Text: APTM120UM70F-AlN Single switch MOSFET Power Module SK S D DK G S D SK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance
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APTM120UM70F-AlN
APTM120UM70F
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GTO thyristor 1200V 50A
Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Text: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES
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Untitled
Abstract: No abstract text available
Text: APTM120U100S-AlN Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G S D VDSS = 1200V RDSon = 100mΩ max @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTM120U100S-AlN
APTM120U100S
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DS333
Abstract: No abstract text available
Text: APTM50AM38ST VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM50AM38ST
DS333
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Untitled
Abstract: No abstract text available
Text: APTM50AM38STG VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 OUT VBUS 0/ VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM50AM38STG
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Untitled
Abstract: No abstract text available
Text: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.
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APT30N60BC6
APT30N60SC6
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DD2030
Abstract: diode 53a APT53N60BC6 APT53N60B
Text: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT53N60BC6
APT53N60SC6
O-247
DD2030
diode 53a
APT53N60B
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IRGDDN600K06
Abstract: 30V 600A igbt 600A 500v igbt mosfet 600V 600A circuit INT-A-PAK Package int-a-pak OF IGBT 600A 600V 10 600a - 030 DOUBLE INT-A-PAK Package
Text: Provisional Data Sheet PD-9.1197 Í^ R e c tifi^ gggjHecmier IRGDDN600K06 ir g r d n 600K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"
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IRGDDN600K06
IRGRDN600K06
C-1016
MA55455
30V 600A igbt
600A 500v igbt
mosfet 600V 600A circuit
INT-A-PAK Package
int-a-pak
OF IGBT 600A 600V
10 600a - 030
DOUBLE INT-A-PAK Package
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DOUBLE INT-A-PAK Package
Abstract: No abstract text available
Text: Provisional Data Sheet PD-9.1176 International ^Rectifier IRG DDN600M06 IRG RDN600M06 “SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A .Rugged Design •Simple gate-drive • Switching-Loss Rating includes all “tail"
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DDN600M06
RDN600M06
Outline13
C-456
DOUBLE INT-A-PAK Package
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IRGDDN600K06
Abstract: mosfet 600V 600A circuit power mosfet 600v 600A lm 2604 vqe 208 e
Text: International Provisional Data Sheet PD-9.1197 IRGDDN600K06 1RGRDN600K06 ^R ectifier "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 600A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail* losses
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IRGDDN600K06
1RGRDN600K06
C-1016
mosfet 600V 600A circuit
power mosfet 600v 600A
lm 2604
vqe 208 e
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semikron snubber
Abstract: snubber resistance of IGBT semikron IGBT snubber power mosfet 600v 600A IGBT 1200A SKIIPPACK Power MOSFET 150 A mosfet 600V 600A circuit snubber igbt
Text: SEMIKRPN innovation+ service U tf&i Now SEMIKRON introduces SKiiP SKiiP , a new compact technology for integrated intelligent power. SKiiPPACK® IGBT product range from 600 to 1700V from 150 to 800A sixpack 600V from 150 to 300A sixpack 1200/1700V from 400 to 1200A halfbridge 1200/1700V
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1200/1700V
semikron snubber
snubber resistance of IGBT
semikron IGBT snubber
power mosfet 600v 600A
IGBT 1200A
SKIIPPACK
Power MOSFET 150 A
mosfet 600V 600A circuit
snubber igbt
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