FDH45N50F
Abstract: No abstract text available
Text: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH45N50F
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FDH45N50F
Abstract: No abstract text available
Text: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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F133
Abstract: FDH45N50F
Text: UniFET FDH45N50F_F133 TM 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDH45N50F_F133 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH45N50F
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w45nm50fd
Abstract: of w45nm50fd STW45NM50FD W45NM50 JESD97 ZVS phase-shift converters
Text: STW45NM50FD N-channel 500V - 0.07Ω - 45A - TO247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STW45NM50FD 500V <0.1Ω 45A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge
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w45nm50fd
of w45nm50fd
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JESD97
ZVS phase-shift converters
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Untitled
Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
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STW45NM50
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STW45NM50FD
Abstract: No abstract text available
Text: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STW45NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STW45NM50
Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW45NM50
Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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ZVS phase-shift converters
Abstract: STW45NM50FD
Text: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STW45NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STW45NM50FD
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STW45NM50
Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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W45NM50FD
Abstract: of w45nm50fd w45nm50f STW45NM50FD W45NM50 ZVS phase-shift converters
Text: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh MOSFET With FAST DIODE Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STW45NM50FD 500V < 0.1Ω 45 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STW47NM50
Abstract: NC45A
Text: STW47NM50 N-CHANNEL 500V - 0.065Ω - 45A TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS on Rds(on)*Qg ID STW47NM50 500V < 0.085Ω 5.6 Ω*nC 45 A TYPICAL RDS(on) = 0.065Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STW45NM50
Abstract: N-channel MOSFET to-247 DSA003958
Text: STW45NM50 N-CHANNEL 500V - 0.07Ω - 45A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V <0.09Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STW45NM50FD
Abstract: ZVS phase-shift converters stw45nm50f
Text: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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STW45NM50
Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW45NM50
Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET PRELIMINARY DATA TYPE STW45NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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Abstract: No abstract text available
Text: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE
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STW45NM50
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O-247
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ZVS phase-shift converters
Abstract: STW45NM50FD
Text: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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ZVS phase-shift converters
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STW45NM50FD
Abstract: zvs circuit schematic diagram ZVS phase-shift converters
Text: STW45NM50FD N-CHANNEL 500V - 0.09Ω - 45A TO-247 FDmesh Power MOSFET With FAST DIODE TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
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