tyco igbt module 25A
Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
Text: Power Modules Fast Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range
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Vincotech-012-0508
ISO9001
TS16949
tyco igbt module 25A
2kw pfc
tyco igbt module 25A 1200V
mosfet 600V 60A
MOSFET 1200v 30a
mosfet 600V 30A
2kw mosfet
mosfet 1200V 40A
V23990-P600-I19-PM
IGBT Transistor 1200V, 25A
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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FDPF20N50T
Abstract: mosfet 10a 500v 500V 100A thyristors FDP20N50 FDPF20N50
Text: TM UniFET FDP20N50 / FDPF20N50T 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP20N50
FDPF20N50T
FDPF20N50T
mosfet 10a 500v
500V 100A thyristors
FDPF20N50
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stepper motor driver full bridge 6A
Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx
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BTW68/69
BF3506TV
/10TV
BHA/K3012TV
0-55A
00V/35A
000V/35A
L4981A/B
STW/Y/ExNA60
STTAxx06
stepper motor driver full bridge 6A
mosfet 600V 20A
600v 30a IGBT
20NB50
PSO-36
igbt to220
Triac 3a 600v
Motor Driver IC L293D
L298N
IGBT full bridge
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FDA20
Abstract: *20N50F
Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA20N50
FDA20
*20N50F
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smps with uc3842 and tl431
Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES
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BF3510TV
/BF3506TV
BHA/K3012TV
BTAxx600CW
AVS08
L6560/A
L6561
L4981A/B
ST90T40
/W/P/HxxNB50/60/80
smps with uc3842 and tl431
mc34063 step down with mosfet
mc34063 step up with mosfet
MC34063 MOSFET
UC3842 step up converter
mc34063 step down 5a
mc34063 step up 5a
MOSFET 1000v 30a
uc3842 step down
mc34063 triple output
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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NF 35A
Abstract: pdm755ha
Text: MOSFET MODULE PDM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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PDM755HA
/500V
300KHz
Dis25/W
NF 35A
pdm755ha
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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/500V
P2HM755HA
300KHz
150iMAX
25i/W
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2HM755HA Dual 75A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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/500V
P2HM755HA
300KHz
150MAX
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441H
Abstract: PD10M440H PD10M441H
Text: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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PD10M441H
PD10M440H
50V/500V
300KHz
PD10M441H
171/W
441H
PD10M440H
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE PD10M441H / PD10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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50V/500V
PD10M441H
PD10M440H
300KHz
PD10M441H
150iMAX
171i/W
-441H
-440H
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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50V/500V
P2H10M441H
P2H10M440H
300KHz
P2H10M441H
171/W
-441H
-440H
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H10M441H / P2H10M440H Dual 85A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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50V/500V
P2H10M441H
P2H10M440H
300KHz
P2H10M441H
171/W
-441H
-440H
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irf460lc
Abstract: IRFP460LC IRFPE30 irf46
Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω
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IRFP460LC
IRFPE30
irf460lc
IRFP460LC
IRFPE30
irf46
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irf460lc
Abstract: IRF460 power mosfet 500v 20a circuit IRFP460LC equivalent IRFP460LC IRFPE30 IRF460L
Text: Previous Datasheet Index Next Data Sheet PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFP460LC
stanFPE30
irf460lc
IRF460
power mosfet 500v 20a circuit
IRFP460LC equivalent
IRFP460LC
IRFPE30
IRF460L
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400V to 12V DC Regulator
Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
Text: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET
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1741A
IRHNB7460SE
MIL-STD-750,
MlL-STD-750,
400V to 12V DC Regulator
IRHNB7460SE
400v 20A ultra fast recovery diode
si 220 mh
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IRHNA7460SE
Abstract: HEXFET Power MOSFET SMD2
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
HEXFET Power MOSFET SMD2
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IRHNA7460SE
Abstract: No abstract text available
Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifiers RADHardTM HEXFET® MOSFET
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1399A
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
IRHNA7460SE
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Untitled
Abstract: No abstract text available
Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET
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91399B
IRHNA7460SE
MIL-STD-750,
MlL-STD-750,
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power mosfet 500v 20a circuit
Abstract: *20N50F
Text: UniFETTM FDA20N50F tm N-Channel MOSFET 500V, 22A, 0.26Ω Features Description • RDS on = 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA20N50F
FDA20N50F
power mosfet 500v 20a circuit
*20N50F
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irf460lc
Abstract: IRF460L IRFP460LC IRFPE30 IRF460
Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω
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IRFP460LC
12-Mar-07
irf460lc
IRF460L
IRFP460LC
IRFPE30
IRF460
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Untitled
Abstract: No abstract text available
Text: PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.27 Ω
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IRFP460LC
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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OCR Scan
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IRFP460LC
61350BadHomburgTel:
5545E
GD223D1
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