FDPF18N50T
Abstract: No abstract text available
Text: UniFETTM FDP18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50T
FDPF18N50T
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fdp18n50
Abstract: FDPF18N50
Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50
FDPF18N50
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FDP18N50
Abstract: FDPF18N50T FDPF18N50
Text: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50
FDPF18N50T
FDPF18N50T
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18N50T
Abstract: fdpf18n50t
Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50
FDPF18N50
FDPF18N50T
18N50T
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FDPF18N50T
Abstract: FDP18N50
Text: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50
FDPF18N50T
FDPF18N50T
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fdp18n50
Abstract: FDPF18N50 MOSFET 500V 18A
Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50
FDPF18N50
MOSFET 500V 18A
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FDPF
Abstract: FDP18N50 FDPF18N50 MOSFET 500V 18A
Text: TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDP18N50
FDPF18N50
FDPF18N50
FDPF
MOSFET 500V 18A
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Mosfet
Abstract: SSF18N50F
Text: SSF18N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.22ohm(typ.) ID 18A TO- 220F Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and
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SSF18N50F
22ohm
O220F
O-220F
Mosfet
SSF18N50F
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ISD18A
Abstract: MOSFET 500V 18A 18n50
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N50
18N50
QW-R502-477
ISD18A
MOSFET 500V 18A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N50
18N50
O-220F1
O-220F2
QW-R502-477
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FQA18N50AV2,18N50,AV218N50,FDA18N50
Abstract: 18N50
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 TO-230 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.
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18N50
O-230
18N50
O-220F1
O-220F2
O-220
QW-R502-477
FQA18N50AV2,18N50,AV218N50,FDA18N50
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Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 500V / 18A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY18N50W 500V, RDS(ON)=0.32W@VGS=10V, ID=9A
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HY18N50W
2002/95/EC
MIL-STD-750
2026oted)
250mA
125oC
-55oC
11-Jan-2012
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Untitled
Abstract: No abstract text available
Text: KSM18N50V2/KSMF18N50V2 500V N-Channel MOSFET TO-220F TO-220 Features • • • • • • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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KSM18N50V2/KSMF18N50V2
O-220F
O-220
54TYP
00x45Â
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18N50
Abstract: 18n50 mosfet 477 diode 18N50G-TF1-T 18N50G-TF2-T
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche
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18N50
18N50
O-220F1
O-220F2
O-263
QW-R502-477
18n50 mosfet
477 diode
18N50G-TF1-T
18N50G-TF2-T
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18N50
Abstract: 18N50L
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche
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18N50
O-220F1
18N50
O-220F2
QW-R502-477
18N50L
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18n50
Abstract: 18N50G 18n50 mosfet 477 diode
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche
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18N50
O-220F1
18N50
O-220F2
QW-R502-477
18N50G
18n50 mosfet
477 diode
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FQA18N50AV2,18N50,AV218N50,FDA18N50,FQA18N50V2
Abstract: MDP18N50,18N50 FQA18N50AV2,18N50,AV218N50,FDA18N50 18N50+equivalent 18n50 mosfet 18n50
Text: UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the
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18N50
18N50
O-220F1
O-220F2
O-263
O-220F
QW-R502-477
FQA18N50AV2,18N50,AV218N50,FDA18N50,FQA18N50V2
MDP18N50,18N50
FQA18N50AV2,18N50,AV218N50,FDA18N50
18N50+equivalent
18n50 mosfet
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2N7218
Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
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2N7218,
JANTX2N7218,
JANTXV2N7218
2N7219,
JANTX2N7219,
JANTXV2N7219
2N7221,
JANTX2N7221,
JANTXV2N7221
2N7222,
2N7218
2N7219
2N7221
2N7222
JANTX2N7218
JANTX2N7219
JANTX2N7221
JANTX2N7222
JANTXV2N7218
JANTXV2N7219
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9528
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFY430
IRFY430M
O-257AB
O220M
O-257AB)
IRFY430M
9528
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFY430
IRFY430M
O-257AB
280mJ
O220M
O-257AB)
IRFY430
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400V to 12V DC Regulator
Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
Text: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET
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1741A
IRHNB7460SE
MIL-STD-750,
MlL-STD-750,
400V to 12V DC Regulator
IRHNB7460SE
400v 20A ultra fast recovery diode
si 220 mh
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S18A
Abstract: No abstract text available
Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available
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2N7218
2N7219
2N7221
2N7222
O-254AA
S18A
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TRANSISTOR PEC 545
Abstract: 2N7221 transistor 2Fn 1256C 2N7218 2N7219 2N7222
Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Ceramic Feedthroughs Available
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2N7218
2N7221
2N7219
2N7222
O-254AA
534-5776FAX
t1073
TRANSISTOR PEC 545
transistor 2Fn
1256C
2N7222
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luo24
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 O UTLINE DRAWING Dimensions in mm 4.5 r~ ! ! •i 1.5 j . 500V • TDS ON (MAX) .0.50Q.
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FK18SM-10
150ns
5710e
luo24
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