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    MOSFET 1A TO 92 Search Results

    MOSFET 1A TO 92 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1A TO 92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CIRCUIT TURN SIGNAL 6 VOLT

    Abstract: gate driver high side buck driver
    Text: MX8830B/MX8830R/MX8830X Synchronous Buck MOSFET Driver Features: General Description • Logic Level Gate Drive Compatible The MX8830 family are 1A Source / 1A Sink Synchronous Buck MOSFET Drivers. These Synchronous Buck MOSFET Drivers are specifically designed to drive two N-channel power MOSFETs


    Original     		PDF MX8830B/MX8830R/MX8830X MX8830B/MX8803R/MX8830X: MX8830R/MX8830X: MX8830 MX8830 CIRCUIT TURN SIGNAL 6 VOLT gate driver high side buck driver

    NJW4153U2-A

    Abstract: NJW4153
    Text: NJW4153 Switching Regulator IC for Buck Converter Current Mode Control w/ 40V/1A MOSFET GENERAL DESCRIPTION The NJW4153 is a buck converter with 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.6V to 40V.


    Original     		PDF NJW4153 NJW4153 NJW4153U2 NJW4153U2-A

    NJW4153Automotive

    Abstract: NJW4153
    Text: Automotive NJW4153 Switching Regulator IC for Buck Converter Current Mode Control w/ 40V/1A MOSFET  GENERAL DESCRIPTION The NJW4153 is a buck converter with 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.6V to 40V.


    Original     		PDF NJW4153 NJW4153 NJW4153U2-A-T1 NJW4153Automotive

    NJW4153

    Abstract: NJW4153 E NJW4153U2-A UMK325BJ106MM GRM32EB31E226KE15 NJW4153KV1
    Text: NJW4153 Switching Regulator IC for Buck Converter Current Mode Control w/ 40V/1A MOSFET GENERAL DESCRIPTION • PACKAGE OUTLINE The NJW4153 is a buck converter with 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.6V to 40V.


    Original     		PDF NJW4153 NJW4153 NJW4153U2 NJW4153KV1 NJW4153 E NJW4153U2-A UMK325BJ106MM GRM32EB31E226KE15

    UMK325BJ106MM

    Abstract: No abstract text available
    Text: NJW4153 Switching Regulator IC for Buck Converter Current Mode Control w/ 40V/1A MOSFET GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4153 is a buck converter with 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.6V to 40V.


    Original     		PDF NJW4153 NJW4153 NJW4153U2 NJW4153KV1 UMK325BJ106MM

    DIODE smd marking v1

    Abstract: No abstract text available
    Text: The Leader in High Temperature Semiconductor Solutions Version: 1.0 CHT-NMOS8001-PRELIMINARY DATASHEET High-Temperature, 80V / 1A N-Channel MOSFET General description Features The CHT-NMOS8001 is a Medium Power 80V/1A N-channel power MOSFET’s designed to achieve high performance in an


    Original     		PDF CHT-NMOS8001-PRELIMINARY CHT-NMOS8001 TDFP16 PDS-121218 19-Nov-12 DIODE smd marking v1

    NJW4131

    Abstract: JRC 072 D resistor 1608
    Text: NJW4131 Switching Regulator IC for Boost Converter w/ 40V/1.4A or 40V/1A MOSFET GENERAL DESCRIPTION •PACKAGE OUTLINE The NJW4131 is a boost converter with 40V/1.4A or 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.0V to 35V.


    Original     		PDF NJW4131 NJW4131 NJW4131GM1-A NJW4131R-B 700kHz JRC 072 D resistor 1608

    1hnk60r

    Abstract: STD1NK60-1 D1NK60 to-92 mosfet 1A
    Text: STD1NK60 - STD1NK60-1 STQ1HNK60R N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET PRELIMINARY DATA TYPE STD1NK60 STD1NK60-1 STQ1HNK60R • ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A


    Original     		PDF STD1NK60 STD1NK60-1 STQ1HNK60R 1hnk60r D1NK60 to-92 mosfet 1A

    Untitled

    Abstract: No abstract text available
    Text: NJW4131 Switching Regulator IC for Boost Converter w/ 40V/1.4A or 40V/1A MOSFET GENERAL DESCRIPTION PACKAGE OUTLINE The NJW4131 is a boost converter with 40V/1.4A or 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.0V to 35V.


    Original     		PDF NJW4131 NJW4131 NJW4131GM1-A NJW4131R- 700kHz

    power transistor output 12v dc ,1.5-2A

    Abstract: NJW4131R NJW4131 CMS11 max3568 CDRH8D38NP-470N NJW4131R-B FDT 1.5 Schottky Diode 40V 2A resistor 1608
    Text: NJW4131 Switching Regulator IC for Boost Converter w/ 40V/1.4A or 40V/1A MOSFET • PACKAGE OUTLINE GENERAL DESCRIPTION The NJW4131 is a boost converter with 40V/1.4A or 40V/1A MOSFET. It corresponds to high oscillating frequency, and Low ESR Output Capacitor MLCC within wide input range from 4.0V to 35V.


    Original     		PDF NJW4131 NJW4131 NJW4131GM1-A NJW4131R-B 700kHz power transistor output 12v dc ,1.5-2A NJW4131R CMS11 max3568 CDRH8D38NP-470N NJW4131R-B FDT 1.5 Schottky Diode 40V 2A resistor 1608

    stq1ne10l

    Abstract: Q1NE10L stq1ne10l-ap
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP Q1NE10L

    Q1NE10L

    Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L Q1NE10L JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10

    STQ1NE10L-AP

    Abstract: q1ne10l Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP q1ne10l Q1NE10

    d1nk6

    Abstract: D1NK60 1hnk60r
    Text: STD1NK60 - STD1NK60-1 STQ1HNK60R N-CHANNEL 600V - 8Ω - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET TYPE STD1NK60 STD1NK60-1 STQ1HNK60R • ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 30 W 30 W 3W TYPICAL RDS(on) = 8 Ω


    Original     		PDF STD1NK60 STD1NK60-1 STQ1HNK60R d1nk6 D1NK60 1hnk60r

    Untitled

    Abstract: No abstract text available
    Text: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE


    Original     		PDF STQ1NE10L

    Untitled

    Abstract: No abstract text available
    Text: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE


    Original     		PDF STQ1NE10L

    MP2487

    Abstract: mp24
    Text: MP2487 55V, 1A High Power LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP2487 is a fixed frequency step-down switching regulator to deliver a constant current of up to 1A to high power LEDs. It integrates a high-side, high voltage power MOSFET with a


    Original     		PDF MP2487 MP2487 200mV 200kHz, MS-012, mp24

    STQ1NE10L

    Abstract: schematic diagram dc-dc transistor c 458
    Text: STQ1NE10L N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET POWER MOSFET TYPE STQ1NE10L • ■ ■ ■ ■ VDSS RDS on ID 100 V <0.4 Ω 1A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE


    Original     		PDF STQ1NE10L STQ1NE10L schematic diagram dc-dc transistor c 458

    mp2487

    Abstract: MP2487DN B180-7-F BAT54 CMSH2100M IN4148 JESD51-7
    Text: MP2487 55V, 1A High Power LED Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP2487 is a fixed frequency step-down switching regulator to deliver a constant current of up to 1A to high power LEDs. It integrates a highside, high voltage power MOSFET with a current


    Original     		PDF MP2487 MP2487 200mV 200kHz, MS-012, MP2487DN B180-7-F BAT54 CMSH2100M IN4148 JESD51-7

    Untitled

    Abstract: No abstract text available
    Text: SJV01N60 1A , 600V , RDS ON 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking


    Original     		PDF SJV01N60 13-Sep-2011

    SJV01N65B

    Abstract: MosFET
    Text: SJV01N65B 1A , 650V , RDS ON 14Ω Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking


    Original     		PDF SJV01N65B circ00V 07-May-2013 SJV01N65B MosFET

    MOSFET A3

    Abstract: No abstract text available
    Text: M TC1411/TC1411N 1A High-Speed MOSFET Drivers Features Package Type • Latch-Up Protected: Will Withstand 500mA Reverse Current • Input Will Withstand Negative Inputs Up to 5V • ESD Protected: 4kV • High Peak Output Current: 1A • Wide Operating Range


    Original     		PDF TC1411/TC1411N 500mA 1000pF 25nsec 30nsec TC1410/TC1412/TC1413 D-81739 DS21390B-page MOSFET A3

    COA0346

    Abstract: MS-001 TC1411 TC1411N
    Text: M TC1411/TC1411N 1A High-Speed MOSFET Drivers Features Description • Latch-Up Protected: Will Withstand 500 mA Reverse Current • Input Will Withstand Negative Inputs Up to 5V • ESD Protected: 4 kV • High Peak Output Current: 1A • Wide Input Supply Voltage Operating Range:


    Original     		PDF TC1411/TC1411N TC1410/TC1412/TC1413 TC1411/TC1411N DK-2750 D-85737 DS21390C-page COA0346 MS-001 TC1411 TC1411N

    4420 mosfet soic

    Abstract: TC1411 TC1411COA TC1411CPA TC1411EOA TC1411EPA TC1411N TC1411NCOA TC1411NCPA TC1411NEOA
    Text: TC1411 TC1411N 1A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground


    Original     		PDF TC1411 TC1411N TC1411/1411N 500mA 1000pF 25nsec DS21389A TC1411/N-10 4420 mosfet soic TC1411 TC1411COA TC1411CPA TC1411EOA TC1411EPA TC1411N TC1411NCOA TC1411NCPA TC1411NEOA