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    MOSFET 12A 600V Search Results

    MOSFET 12A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 12A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FS10KM-12A

    Abstract: fs10km 200v 5A mosfet power Diode 400V 20A mosfet 10a 600v
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-12A FS10KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3


    Original     		PDF FS10KM-12A O-220FN FS10KM-12A fs10km 200v 5A mosfet power Diode 400V 20A mosfet 10a 600v

    FS14KM-12A

    Abstract: No abstract text available
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS14KM-12A FS14KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS14KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3


    Original     		PDF FS14KM-12A O-220FN FS14KM-12A

    mosfet 12A 600V

    Abstract: MOSFET 600V 7A smps inverter circuit FL14KM-12A
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-12A FL14KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3


    Original     		PDF FL14KM-12A O-220FN mosfet 12A 600V MOSFET 600V 7A smps inverter circuit FL14KM-12A

    FS2KM-12A

    Abstract: FS2KM
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS2KM-12A FS2KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS2KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2


    Original     		PDF FS2KM-12A O-220FN FS2KM-12A FS2KM

    FS7KM-12A

    Abstract: FS7KM12 FS7KM
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS7KM-12A FS7KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS7KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2


    Original     		PDF FS7KM-12A O-220FN FS7KM-12A FS7KM12 FS7KM

    FS4KM-12A

    Abstract: fs4km12a fs4km
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS4KM-12A FS4KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS4KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2


    Original     		PDF FS4KM-12A O-220FN FS4KM-12A fs4km12a fs4km

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170

    FS22SM-12A

    Abstract: POWER MOSFET 4600
    Text: MITSUBISHI Nch POWER MOSFET FS22SM-12A HIGH-SPEED SWITCHING USE FS22SM-12A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 20.0 5.0 ➃ 4 2 f 3.2 2 19.5MIN. 1.0 ➀ ➁ 4.4 ➂ 5.45 5.45 0.6 2.8 4 ➁➃ ● 10V DRIVE ● VDSS . 600V


    Original     		PDF FS22SM-12A FS22SM-12A POWER MOSFET 4600

    12N60l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170 12N60l

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60K-MT 12N60K-MT QW-R502-B06

    12N60L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220 12N60 O-220F O-220F1 QW-R502-170 12N60L

    UTC12N60

    Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 UTC12N60 12n60g 12N60L 12n60 12a 600v mosfet 12A 600V

    Untitled

    Abstract: No abstract text available
    Text: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.


    Original     		PDF R6012FNX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60K-MT 12N60K-MT O-220F2 QW-R502-B06

    r6012anx

    Abstract: No abstract text available
    Text: R6012ANX R6012ANX Datasheet Nch 600V 12A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6012ANX O-220FM R1120A r6012anx

    Untitled

    Abstract: No abstract text available
    Text: R6012FNJ Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		PDF R6012FNJ SC-83) R1102A

    R6012ANX

    Abstract: No abstract text available
    Text: R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.42Ω ID 12A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		PDF R6012ANX O-220FM R1120A R6012ANX

    AOTF12N60

    Abstract: AOT12N60 VDS-100V AOTF12
    Text: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance


    Original     		PDF AOT12N60 AOTF12N60 AOT9610/AOTF9610 AOT12N60 AOTF12N60 O-220 O-220F VDS-100V AOTF12

    AOTF12N60

    Abstract: AOT12N60 AOT4N60
    Text: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N60/AOTF12N60 AOT12N60 AOTF12N60 O-220 O-220F AOT12N60 AOT4N60

    Untitled

    Abstract: No abstract text available
    Text: AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original     		PDF AOW12N60/AOWF12N60 AOW12N60 AOWF12N60 O-262 O-262F

    Untitled

    Abstract: No abstract text available
    Text: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N60/AOTF12N60 AOT12N60 AOTF12N60 AOT12N60L AOTF12N60L O-220 O-220F

    AOTF12N60L

    Abstract: AOT12N60 AOTF12N60
    Text: AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N60/AOTF12N60 AOT12N60 AOTF12N60 AOT12N60L AOTF12N60L O-220 O-220F AOTF12N60L AOT12N60

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FL7KM-12A HIGH-SPEED SWITCHING USE FL7KM-12A OUTLINE DRAWING Dimensions in mm 10 ±0.3 2.8 ±0.2 à • 10V DRIVE • V d s s . 600V rD S ON ( M A X ) . 1 .3D.


    OCR Scan     		PDF FL7KM-12A O-220FN 30ERATURE

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FL12KM-12A •§;> >>•+. :W> ^ »ft fin*' slljü \e cl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FL12KM-12A OUTLINE DRAWING Dim ensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 600V


    OCR Scan     		PDF FL12KM-12A FL12KM-12A O-22QFN 200PERATURE 57kh23