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    MOSFET 10A 800V FS Search Results

    MOSFET 10A 800V FS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 10A 800V FS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STU10NB80

    Abstract: No abstract text available
    Text: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STU10NB80 Max220 STU10NB80

    FS10SM16A

    Abstract: MOSFET 800V 10A FS10SM-16A mosfet 10a 800v
    Text: MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V


    Original     		PDF FS10SM-16A FS10SM16A MOSFET 800V 10A FS10SM-16A mosfet 10a 800v

    15A POWER TRANSISTOR FOR SMPS

    Abstract: list of n channel power mosfet FQPF*10n20c FAN7601 detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C
    Text: New LEDs and LED Driver IC Solutions 1 • Comprehensive New Product List • New Product Highlights FAN7031, FAN7023, FAN7005 - Audio Amplifiers FIN7216-01 - Quad PHY FAN7556 - Voltage Mode PWM Controller FAN7601 - Current Mode PWM Controller FSA3357 - SP3T Analog Switch


    Original     		PDF FAN7031, FAN7023, FAN7005 FIN7216-01 FAN7556 FAN7601 FSA3357 QVE00033 Power247TM, 15A POWER TRANSISTOR FOR SMPS list of n channel power mosfet FQPF*10n20c detailed vfd circuit diagram for motor FAN7601 application data list of P channel power mosfet 80a charger transformer dual Phototransistor mouse FQPF10N20C

    TRIACS EQUIVALENT LIST

    Abstract: 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS
    Text: FS8S0765RC The FS8S0765RC is a highly integrated off-line power switch FPS for CRT monitor fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (650V minimum breakdown rating) with a


    Original     		PDF FS8S0765RC new/fs8s0765rc FS8S0765RC ACE1502 FAN1655 FAN2534 FAN5098 Power247TM, TRIACS EQUIVALENT LIST 440v to 12v smps power supply REG IC 48V IN 12V 10A OUT 440v ac voltage regulator 440v to 12v smps power supply 50A dimmer diagrams IGBT FKPF12N60 24v 12v 20A regulator 600V igbt dc to dc buck converter 24V 10A SMPS

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
    Text: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V


    Original     		PDF SSH10N80A mosfet 10a 800v MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs

    MOSFET 800V 10A TO-3P

    Abstract: FS5SM-16A
    Text: MITSUBISHI Nch POWER MOSFET FS5SM-16A HIGH-SPEED SWITCHING USE FS5SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V


    Original     		PDF FS5SM-16A MOSFET 800V 10A TO-3P FS5SM-16A

    FS5VS-16A

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FS5VS-16A HIGH-SPEED SWITCHING USE FS5VS-16A OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V


    Original     		PDF FS5VS-16A O-220S FS5VS-16A

    FS5UM-16A

    Abstract: FS5UM MOSFET 800V 10A
    Text: MITSUBISHI Nch POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V


    Original     		PDF FS5UM-16A O-220 FS5UM-16A FS5UM MOSFET 800V 10A

    mosfet 10a 800v

    Abstract: FS5KM-16A FS5KM16A
    Text: MITSUBISHI Nch POWER MOSFET FS5KM-16A HIGH-SPEED SWITCHING USE FS5KM-16A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 800V


    Original     		PDF FS5KM-16A mosfet 10a 800v FS5KM-16A FS5KM16A

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500

    FS7M0880

    Abstract: 7m0880 7M088 GDB206
    Text: www.fairchildsemi.com FS7M0680, FS7M0880 Fairchild Power Switch FPSTM Features • • • • • • • • Pulse by Pulse Current Limit Over load protection (OLP) - Latch Over voltage protection (OVP) - Latch Internal Thermal Shutdown (TSD) - Latch Under Voltage Lock Out (UVLO) with hysteresis


    Original     		PDF FS7M0680, FS7M0880 66kHz) FS7M0880 7m0880 7M088 GDB206

    ntc 10D-11

    Abstract: 7m0880 flyback 200w bobbin EER-3542 flyback 150w FS7M0880 pin diagram for 7m0880 bobbin EER3542 bobbin EER 4042 EER 4042
    Text: www.fairchildsemi.com FS7M0680, FS7M0880 Fairchild Power Switch FPSTM Features • • • • • • • • Pulse by Pulse Current Limit Over load protection (OLP) - Latch Over voltage protection (OVP) - Latch Internal Thermal Shutdown (TSD) - Latch Under Voltage Lock Out (UVLO) with hysteresis


    Original     		PDF FS7M0680, FS7M0880 66kHz) ntc 10D-11 7m0880 flyback 200w bobbin EER-3542 flyback 150w FS7M0880 pin diagram for 7m0880 bobbin EER3542 bobbin EER 4042 EER 4042

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
    Text: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90711C O-254AA) IRFMG50 O-254AA. MIL-PRF-19500 mosfet 10a 800v MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50

    Infineon technology roadmap for mosfet

    Abstract: LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA
    Text: NXP PowerMOS, BIPOLAR and Motor Control Smaller, Faster, Cooler June 05, 2014 Nicolas Rescanieres Field Application Engineer South of France NXP PowerMOS 1 Agenda MosFET in automotive and industrial Bipolar Motor Control Agenda MosFET in automotive and industrial


    Original     		PDF KMZ60 KMA210 KMA215 Infineon technology roadmap for mosfet LFPAK88 Acbel schematic diagram switching power supply BLDC TRW schematic diagram inverter air conditioner schematic diagram for split air conditioner TRIAC 20A 600V inverter schematic ims 1600 triac 4A, 600V, 5mA triac 0,8A, 600V, 5mA

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    13.56mhz c class amp

    Abstract: ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C ARF1519 750w planar transistor
    Text: ARF1519 D ARF1519 BeO 104T-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz.


    Original     		PDF ARF1519 104T-100 25MHz ARF1519 13.56mhz c class amp ATC 100C 13.56Mhz class AB power amplifier 13.56MHZ mosfet N CHANNEL MOSFET 10A 1000V POWER MOSFET 4600 13.56Mhz rf amplifier 100C 750w planar transistor

    SMPS 666

    Abstract: FPS138 EER2834 YE EI- 33C DF 085 33H Bridge EER2834 2 GBU606 EER28 rsn 33m 3un6
    Text: ✂✁ ✌ ✍ FPS ✎✑✏✑✒✔✓ ✕✗✖ FPS ✄✂☎✂✆✂✝✂✞✂✟ ✘ AC-DC ✠ AC-DC ✡☞☛ ✙✛✚ Hang-Seok Choi FPS +82-32-680-1383 +82-32-680-1317 [email protected] [ ] FPS Fairchild AC-DC SMPS SMPS FPS FPS design assistant


    Original     		PDF KA431 UF4007 1000uF MBR3045PT 100nF UF4003 470uF 2200uF 1000uF SMPS 666 FPS138 EER2834 YE EI- 33C DF 085 33H Bridge EER2834 2 GBU606 EER28 rsn 33m 3un6

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    FS10SM16A

    Abstract: FS10SM-16A
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A •800V ■0.98Q 10A • V d s s . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­


    OCR Scan     		PDF FS10SM-16A FS10SM16A FS10SM-16A

    FS10SM16A

    Abstract: FS10SM-16A fs10sm16 MOSFET 800V 10A TO-3P
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX kr • r 4.4 1.0 5.45 5.45 0.6 ] bd^ Q w r q w e r V d s s . 800V


    OCR Scan     		PDF FS10SM-16A 57KH23 FS10SM16A FS10SM-16A fs10sm16 MOSFET 800V 10A TO-3P

    1AV Series

    Abstract: No abstract text available
    Text: FU JI 2SK2762-01L,S t ìiu M s ir t ó u t ì FAP-IIS Series > Features - N-channel MOS-FET 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VG S = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan     		PDF 2SK2762-01L 1AV Series

    POWER MOSFET Rise Time 1000V NS

    Abstract: MBG40H-3 fast recovery diode 1000v 10A opto fet MOSFET 800V 10A 100U
    Text: J37/A M icropac Microcircuits Division MBG40H-3 Micropac Power MOSFET • • • • • • • Each FET VDSS = 1000V Half Bridge Driver Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Hermetically Sealed


    OCR Scan     		PDF MBG40H-3 O-258 POWER MOSFET Rise Time 1000V NS MBG40H-3 fast recovery diode 1000v 10A opto fet MOSFET 800V 10A 100U

    MA2810

    Abstract: MA1050 ma4810 MA2830 MA4820 MA2820 MA1040 2SK2060 MJ2400 S20LC20U
    Text: A VARIETY OF SEMICONDUCTORS WHICH RESPOND TO NEEDS OF LIGHTER MK Series AUTOMATIC VOLTAGE SELECTOR: The MK series meets the needs of full range power supplies. DIODES FOR PRIMARY RECTIFICATION: A family of high quality products with a wide range of features, that meet the needs of changing applications.


    OCR Scan     		PDF 240VAC. D10LC20U D10L20U D10SC9M D8LC20U S20LC20U D20LC20U S20SC9M D20SC9M MA2810 MA1050 ma4810 MA2830 MA4820 MA2820 MA1040 2SK2060 MJ2400