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    MOSFET 100A 600V Search Results

    MOSFET 100A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 100A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency


    Original     		PDF 10-FZ06NBA110FP-M306L28 00V/110A

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1

    CPWR-AN12

    Abstract: CAS100H12AM1
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1 CPWR-AN12

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1

    MSK4805

    Abstract: No abstract text available
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. HIGH TEMPERATURE 1200V/100A SiC HALF BRIDGE PEM 4805 FEATURES: Operation to +175°C Case Designed for High Temperature Applications Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching


    Original     		PDF MIL-PRF-38534 200V/100A MIL-PRF-38534 MSK4805

    4804

    Abstract: C 4804 4804 B MOSFET Module 24v 200A MSK4804
    Text: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery


    Original     		PDF MIL-PRF-38534 200V/100A MIL-PRF-38534 MSK4804 4804 C 4804 4804 B MOSFET Module 24v 200A

    C 4804

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM 4804 315 701-6751 FEATURES: Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery


    Original     		PDF MIL-PRF-38534 200V/100A MSK4804 C 4804

    C 4804

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery


    Original     		PDF MIL-PRF-38534 200V/100A MIL-PRF-38534 is/11 MSK4804 C 4804

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED FACILITY 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery


    Original     		PDF MIL-PRF-38534 200V/100A MIL-PRF-38534 is/11 MSK4804

    MSK4804

    Abstract: d413
    Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY 1200V/100A SiC HALF BRIDGE M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 PEM FEATURES: 4804 315 701-6751 Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery


    Original     		PDF MIL-PRF-38534 200V/100A MIL-PRF-38534 MSK4804 d413

    "clip bonding"

    Abstract: 4 CCFL Lamps Inverter 8 CCFL Lamps Inverter circuit ATPAK mosfet h bridge inverter 40w inverter circuit CCFL 2 CCFL Lamps Inverter CCFL inverter 32 ATP206
    Text: T OP I C S Promotional Product Topics Thin-type large-current Power MOSFET Halogen-free 「ATPAK Series 」 New Package By applying Sanyo’s unique Clip Bonding Tech, the new ATPAK series realized 100A rated current, which is the largest among the same class.


    Original     		PDF O-252) MOSFETATPAK20X "clip bonding" 4 CCFL Lamps Inverter 8 CCFL Lamps Inverter circuit ATPAK mosfet h bridge inverter 40w inverter circuit CCFL 2 CCFL Lamps Inverter CCFL inverter 32 ATP206

    CAS100H12

    Abstract: No abstract text available
    Text: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package


    Original     		PDF CAS100H12AM1 CAS120M12BM2 CAS100H12AM1 CAS100H12

    CAS100H12

    Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
    Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 VDS1200 CAS100H12AM1, CAS100H12 CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"

    N mosfet 250v 600A

    Abstract: mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet FS40SM-5 QJQ0220001 mosfet low idss
    Text: QJQ0220001 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper Mosfet Module 250V 200A Mosfet / 600V 600A Fast Diode Description: Powerex Low side Chopper Mosfet Module designed specially for customer applications. Features: • •


    Original     		PDF QJQ0220001 FS40SM-5 N mosfet 250v 600A mosfet 200A mosfet 600V 100A mosfet 600v "MOSFET Module" mosfet 100a 600v 3150 mosfet QJQ0220001 mosfet low idss

    AOTF12N60

    Abstract: AOT12N60 VDS-100V AOTF12
    Text: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance


    Original     		PDF AOT12N60 AOTF12N60 AOT9610/AOTF9610 AOT12N60 AOTF12N60 O-220 O-220F VDS-100V AOTF12

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 1N60A 1N60A QW-R502-091.

    AS4A

    Abstract: SSP4N60AS SSP4N60A
    Text: SSP4N60AS Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ VDS= 600V


    OCR Scan     		PDF SSP4N60AS O-220 AS4A SSP4N60AS SSP4N60A

    SSS4N60AS

    Abstract: No abstract text available
    Text: SSS4N60AS Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA M ax. @ VDS= 600V


    OCR Scan     		PDF SSS4N60AS SSS4N60AS

    SSS4N60AS

    Abstract: No abstract text available
    Text: SSS4N60AS Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ID = 2.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (Max.) @ VDS = 600V


    OCR Scan     		PDF SSS4N60AS 71b4mE SSS4N60AS

    SSR -100 DD

    Abstract: No abstract text available
    Text: SSR/U4N60A A dvanced Power MOSFET FEATURES BVDSS = 600 V Rugged Gate Oxide Technology ^DS on “ • ■ Lower Input Capacitance Improved Gate Charge _Q ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V ■ Lower R ds(on) : 2.037 ii(T y p )


    OCR Scan     		PDF SSR/U4N60A b4142 SSR -100 DD

    Untitled

    Abstract: No abstract text available
    Text: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ V os = 600V


    OCR Scan     		PDF SSP4N60AS G04D37b 003b32fl 3b32t O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: International B Rectifier Provisional Data Sheet PD-9.1149 IRGKIN100M06 "CH O PPER" IG B T INT-A-PAK Low conduction loss IG B T V Œ = 600V lc = 100A V ce O N < 2 .0 V • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“


    OCR Scan     		PDF IRGKIN100M06 C-432