MP-25ZP
Abstract: NP90N04PUF
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER
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NP90N04PUF
NP90N04PUF
O-263
MP-25ZP)
O-263)
MP-25ZP
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82n04
Abstract: 82n04 UG NP82N04MUG nec 2502 4 pin NP82N04NUG date code marking NEC AK 1203 LOT CODE NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 82N04 to-263
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04MUG, NP82N04NUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER
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NP82N04MUG,
NP82N04NUG
NP82N04MUG
NP82N04NUG
NP82N04MUG-S18-AY
NP82N04NUG-S18-AY
O-220
MP-25K)
O-262
MP-25SK)
82n04
82n04 UG
nec 2502 4 pin
date code marking NEC
AK 1203
LOT CODE NEC
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
82N04 to-263
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MP-25ZP
Abstract: NP90N04PUF V1435
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04PUF SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching PART NUMBER PACKAGE NP90N04PUF TO-263 MP-25ZP
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NP90N04PUF
NP90N04PUF
O-263
MP-25ZP)
O-263)
MP-25ZP
V1435
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NP82N04PUG
Abstract: NP82N04PUG1-E1B-AY nec 41-A MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The NP82N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP82N04PUG TO-263 MP-25ZP
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NP82N04PUG
NP82N04PUG
O-263
MP-25ZP)
O-263)
NP82N04PUG1-E1B-AY
nec 41-A
MP-25ZP
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APT12080LVR
Abstract: 1200v diode
Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080LVR
O-264
O-264
APT12080LVR
1200v diode
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APT12080LVR
Abstract: APT1208
Text: APT12080LVR 16A 0.800Ω 1200V POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT12080LVR
O-264
O-264
APT12080LVR
APT1208
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APT1208
Abstract: APT12080B2VFR APT12080LVFR
Text: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080B2VFR
APT12080LVFR
O-264
APT12080B2VFR
O-247
APT1208
APT12080LVFR
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Untitled
Abstract: No abstract text available
Text: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080B2VFR
APT12080LVFR
O-264
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080B2VFR
APT12080LVFR
O-264
APT12080B2VFR
O-247
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APT12080JVR
Abstract: APT1208
Text: APT12080JVR 1200V 15A 0.800W POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080JVR
OT-227
E145592
APT12080JVR
APT1208
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Midcom
Abstract: APT12080JVFR
Text: APT12080JVFR 1200V POWER MOS V S S 27 2 T- D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT12080JVFR
OT-227
E145592
Midcom
APT12080JVFR
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PHC20306
Abstract: BP317 MS-012AA MAM118
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHC20306 Complementary enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor
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PHC20306
SC13b
OT96-1
SCA54
135108/00/01/pp8
PHC20306
BP317
MS-012AA
MAM118
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Untitled
Abstract: No abstract text available
Text: APT12080JVFR 1200V POWER MOS V S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
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APT12080JVFR
OT-227
E145592
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BP317
Abstract: MS-012AA PHP1035
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor
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PHP1035
SC13b
OT96-1
SCA57
135108/00/01/pp8
BP317
MS-012AA
PHP1035
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|
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSH102 N-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1997 Jun 19 Philips Semiconductors Preliminary specification N-channel enhancement mode MOS transistor BSH102
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BSH102
SC13b
BSH102
SCA54
137107/00/01/pp8
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BSH299
Abstract: transistor A1
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES
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BSH299
SC13b
OT363
SCA54
135108/00/01/pp12
BSH299
transistor A1
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BP317
Abstract: MS-012AA PHP1025
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025
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PHP1025
SC13b
OT96-1
SCA57
135108/00/01/pp8
BP317
MS-012AA
PHP1025
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BSH101
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSH101 N-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1997 Jun 19 Philips Semiconductors Preliminary specification N-channel enhancement mode MOS transistor BSH101
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BSH101
SC13b
BSH101
MAM273
SCA54
137107/00/01/pp8
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BP317
Abstract: MS-012AA PHP212L
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP212L Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor
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PHP212L
SC13b
OT96-1
SCA54
137107/00/01/pp8
BP317
MS-012AA
PHP212L
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor
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BSP225
SC13b
OT223
SCA54
137107/00/01/pp12
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BSP220 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor
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BSP220
SC13b
OT223
OT223
SCA54
137107/00/01/pp12
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TH 201
Abstract: APT12080LVR
Text: APT12080LVR A dvanced P o w er Te c h n o l o g y 1200V 16A 0.80012 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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PDF
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APT12080LVR
O-264
APT12080LVR
TH 201
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES
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BSH301
BSH301
OT53Q)
OT53Q
135002/00/01/pp5
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Preliminary specification Philips Semiconductors 1999 Feb 01 PHILIPS Philips Semiconductors Preliminary specification N-channel dual gate MOS-FETs FEATURES BF904A; BF904AR; BF904AWR
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BF904A;
BF904AR;
BF904AWR
BF904AWR
MSB014
F904A
SCA61
/printrun/ed/pp15
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