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    3140 rectifier

    Abstract: 1N5831 1N5b 1N5830 1N5829
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 1N5829 1N5830 1N5831 D esigner's D ata S h eet S w it c h m o d e P o w e r R e c tifie r s . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		1N5829 1N5830 1N5831 1N5831 3140 rectifier 1N5b PDF

    1N5831

    Abstract: E5 sot223 1N5829
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		prop30 DO-35 1N5831 E5 sot223 1N5829 PDF

    1N5831

    Abstract: MN5830 1n5829 MN5829 1N5631 1N5830
    Text: MOTOROLA SC DIODES/OPTO b4E D • b3b7ESS 00flb27S 7bT « M O T ? MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA 1N 5829 1N 5830 1N5831 M BR5831H, H1 Designer's Data Sheet S w itc h m o d e P o w e r R e c tifie rs . employing the Schottky Barrier principle in a large area metal-to-silicon power


    OCR Scan     		00flb27S 1N5831 MN5830 1n5829 MN5829 1N5631 1N5830 PDF