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    onsemi MMBTH10LT1G

    RF TRANS NPN 25V 650MHZ SOT23-3
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    DigiKey MMBTH10LT1G Cut Tape 111,158 1
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    MMBTH10LT1G Digi-Reel 111,158 1
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    MMBTH10LT1G Reel 108,000 3,000
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    Newark MMBTH10LT1G Cut Tape 9,631 1
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    MMBTH10LT1G Reel 3,000
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    Quest Components MMBTH10LT1G 11,701
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    TME MMBTH10LT1G 2,815 1
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    EBV Elektronik MMBTH10LT1G 11 Weeks 3,000
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    Master Electronics MMBTH10LT1G 42,000
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    onsemi MMBTH10LT3G

    RF TRANS NPN 25V 650MHZ SOT23-3
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    DigiKey MMBTH10LT3G Digi-Reel 39,482 1
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    MMBTH10LT3G Cut Tape 39,482 1
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    MMBTH10LT3G Reel 30,000 10,000
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    Mouser Electronics MMBTH10LT3G 19,280
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    onsemi NSVMMBTH10LT1G

    RF TRANS NPN 25V 650MHZ SOT23
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    NSVMMBTH10LT1G Reel 6,000 3,000
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    Mouser Electronics NSVMMBTH10LT1G 5,298
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    Rochester Electronics NSVMMBTH10LT1G 377,000 1
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    onsemi MMBTH10LT1

    RF TRANS NPN 25V 650MHZ SOT23-3
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    DigiKey MMBTH10LT1 Cut Tape
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    Quest Components MMBTH10LT1 5,251
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    MMBTH10LT1 4,181
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    MMBTH10LT1 1,784
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    Rochester Electronics MMBTH10LT1 188,566 1
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    Master Electronics MMBTH10LT1 19,750
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    Rochester Electronics LLC MMBTH10LT1

    TRANS SS VHF NPN 25V SOT23
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    DigiKey MMBTH10LT1 Bulk 6,662
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    MMBTH10L Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBTH10L On Semiconductor VHF/UHF Transistor Original PDF
    MMBTH10LT1 Leshan Radio Company VHF/UHF Transistors(NPN Silicon) Original PDF
    MMBTH10LT1 Motorola VHF/UHF Transistor Original PDF
    MMBTH10LT1 On Semiconductor VHF/UHF Transistor Original PDF
    MMBTH10LT1 On Semiconductor VHF/UHF Transistor Original PDF
    MMBTH10LT1 On Semiconductor Small Signal VHF Mixer; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBTH10LT1/D On Semiconductor Motorola Preferred Device Original PDF
    MMBTH10LT1-D On Semiconductor VHF-UHF Transistor NPN Silicon Original PDF
    MMBTH10LT1G On Semiconductor VHF/UHF Transistor (NPN Silicon) Original PDF
    MMBTH10LT1G On Semiconductor Small Signal VHF Mixer; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBTH10LT3 On Semiconductor MMBTH10 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN, BIP RF Small Signal Original PDF
    MMBTH10LT3G On Semiconductor Small Signal VHF Mixer; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 Original PDF

    MMBTH10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code 3EM SOT-23

    Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
    Text: MMBTH10LT1G, MMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original
    PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps

    mps 1049

    Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original
    PDF MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 2 SOT-23 *Pb-free plating product number: MMBTH10L ORDERING INFORMATION


    Original
    PDF MMBTH10 MMBTH10 OT-23 MMBTH10L MMBTH10-x-AE3-R MMBTH10L-x-AE3-R QW-R206-003

    mmbth10

    Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0


    Original
    PDF MMBTH10LT1 236AB) 1000MHz mmbth10 MMBTH10LT1 M33 thermal marking M33 RB marking

    marking 3EM sot-23

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTH10LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current ICM : 0.05


    Original
    PDF OT-23 MMBTH10LT1 MMBTH10LT1 037TPY 950TPY 550REF 022REF marking 3EM sot-23

    transistor marking 3em

    Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original
    PDF MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1

    MMBTH10LT1

    Abstract: MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters
    Text: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C


    Original
    PDF MMBTH10LT1 OT-23 FR-50 1000MHz MMBTH10LT1 MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1G, MMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original
    PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G NSVMMBTH10LT1G MMBTH10â 04LT1G MMBTH10LT1/D

    transistor marking 3em

    Abstract: MMBTH10LT1
    Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit


    Original
    PDF MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) DiodesMMBTH10LT1/D transistor marking 3em MMBTH10LT1

    POLAR0.8

    Abstract: Marking code mps RB400
    Text: WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reversethat leakage


    Original
    PDF FM120-M+ MMBTH10LT1 FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH POLAR0.8 Marking code mps RB400

    Untitled

    Abstract: No abstract text available
    Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6


    Original
    PDF MMBTH10LT1 236AB) 1000MHz

    MMBTH10

    Abstract: MMBTH10L vhf receiver
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. *Pb-free plating product number: MMBTH10L „ ORDERING INFORMATION


    Original
    PDF MMBTH10 MMBTH10 MMBTH10L MMBTH10-x-AE3-C-R MMBTH10L-x-AE3-C-R OT-23 QW-R206-003 MMBTH10L vhf receiver

    transistor marking 3em

    Abstract: marking 3EM sot-23
    Text: SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range


    Original
    PDF OT-23 MMBTH10LT1 OT-23 MMBTH10LT1 100MHz transistor marking 3em marking 3EM sot-23

    transistor marking JB

    Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
    Text: MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25


    Original
    PDF MMBTH10LT1G, MMBTH10-4LT1G MMBTH10LT1/D transistor marking JB MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


    Original
    PDF MMBTH10LT1, MMBTH10-4LT1

    transistor marking 3em

    Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
    Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


    Original
    PDF MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2

    MMBTH10

    Abstract: MMBTH10G sot-23 Marking YRE MMBTH10L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. Lead-free: MMBTH10L Halogen-free: MMBTH10G „ ORDERING INFORMATION


    Original
    PDF MMBTH10 MMBTH10 MMBTH10L MMBTH10G MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10G sot-23 Marking YRE MMBTH10L

    MPSH10 s parameters

    Abstract: MMBTH10LT1 MPSH10 MPSH11
    Text: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C


    Original
    PDF MMBTH10LT1 OT-23 FR-500 1000MHz MPSH10 s parameters MMBTH10LT1 MPSH10 MPSH11

    TO226AA

    Abstract: 226AA msc2295 P2N2222A MPS3904
    Text: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50


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    PDF MPSH10 BF959 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 MMBTH10-4LT1 MMBT918LT1 BSV52LT1 TO226AA 226AA msc2295 P2N2222A MPS3904

    JB marking transistor

    Abstract: transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking
    Text: MMBTH10LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 VHF/UHF Transistors ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo


    Original
    PDF MMBTH10LT1 OT-23 100uA 1000MHz JB marking transistor transistor marking JB jb transistor transistor marking 3em JB SOT23 transistor transistor polar MPS-H11 JB MARKING SOT-23 TRANSISTOR NPN 3EM RB marking

    Untitled

    Abstract: No abstract text available
    Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6


    Original
    PDF MMBTH10LT1 236AB) 1000MHz

    JB MARKING SOT-23

    Abstract: DELTA fan bfb
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25


    Original
    PDF MMBTH10LT1 OT-23 O-236AB) JB MARKING SOT-23 DELTA fan bfb

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc VCBO 30 Vdc v EBO 3.0 Vdc C ollector-Em itter Voltage


    OCR Scan
    PDF MMBTH10LT1 OT-23 O-236AB)

    mmbth10lt1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 M o t o r o la P r e f e r r e d D e v ic e 2 EMITTER CASE 318-08, STY LE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage


    OCR Scan
    PDF MMBTH10LT1/D MMBTH10LT1 OT-23 O-236AB) mmbth10lt1