DSA0024094
Abstract: No abstract text available
Text: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well
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FDMC7692S
FDMC7692S
DSA0024094
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Untitled
Abstract: No abstract text available
Text: FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS on = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC86520L
FDMC86520L
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Untitled
Abstract: No abstract text available
Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC86320
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Untitled
Abstract: No abstract text available
Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7672
FDMC7672
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FDMC86102Z
Abstract: FDMC86102LZ
Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86102LZ
FDMC86102LZ
FDMC86102Z
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Untitled
Abstract: No abstract text available
Text: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ Features General Description Max rDS on = 60mΩ at VGS = 10V, ID = 4.4A Low Miller Charge This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has
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FDM3622
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R015 marking
Abstract: No abstract text available
Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has
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FDMC2523P
-150V,
R015 marking
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LFPAK footprint
Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Text: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.
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LFPAK56
LFPAK33
LFPAK56,
LFPAK footprint
PowerPAK 1212-8 stencil
LFPAK footprint Renesas
PSMN8R2-80YS
POWERPAK SO8
DFN 3.3X3.3
PSMN7R0-30MLC
PSMN012-60YS
SOT223 nxp
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FDMC7680
Abstract: MO-229
Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7680
FDMC7680
MO-229
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FDMC6675
Abstract: FDMC6675BZ MO-229
Text: FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m: Features General Description Max rDS on = 14.4 m: at VGS = -10 V, ID = -9.5 A HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and
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FDMC6675BZ
FDMC6675BZ
FDMC6675
MO-229
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RG 710
Abstract: FDMC8882 MO-229
Text: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8882
RG 710
FDMC8882
MO-229
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33X3
Abstract: FDMC7664 MO-229
Text: FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7664
FDMC7664
33X3
MO-229
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Untitled
Abstract: No abstract text available
Text: FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mΩ Features General Description ̈ Max rDS on = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC86520L
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Untitled
Abstract: No abstract text available
Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node
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FDMC86320
FDMC86320
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Untitled
Abstract: No abstract text available
Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7672
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Untitled
Abstract: No abstract text available
Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86102LZ
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FDMC7672
Abstract: MO-229
Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7672
FDMC7672
MO-229
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FDMC7664
Abstract: MO-229
Text: FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7664
FDMC7664
MO-229
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FDMC8884
Abstract: MO-229
Text: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m: Features General Description Max rDS on = 19 m: at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8884
FDMC8884
MO-229
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Untitled
Abstract: No abstract text available
Text: FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m: Features General Description This FDMC7672S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well
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FDMC7672S
FDMC7672S
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v14431
Abstract: FDMC7672 MO-229 MLP08S
Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7672
FDMC7672
v14431
MO-229
MLP08S
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MO-229
Abstract: FDMC4435BZ 63A23
Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC4435BZ
MO-229
FDMC4435BZ
63A23
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FDMC7680
Abstract: MO-229
Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7680
FDMC7680
MO-229
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Untitled
Abstract: No abstract text available
Text: FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7664
FDMC7664
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