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    Central Technologies CTMLP080504CF-R47M

    0.47UH SMD MULTIL POWER INDUCTOR
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    DigiKey CTMLP080504CF-R47M Reel 30 1
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    Central Technologies CTMLP080504CF-1R0M

    1.0UH SMD MULTIL POWER INDUCTOR
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    DigiKey CTMLP080504CF-1R0M Reel 30 1
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    Central Technologies CTMLP080504CF-R24M

    0.24UH SMD MULTIL POWER INDUCTOR
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    DigiKey CTMLP080504CF-R24M Reel 30 1
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    Central Technologies CTMLP080504CF-2R2M

    2.2UH SMD MULTIL POWER INDUCTOR
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    DigiKey CTMLP080504CF-2R2M Reel 30 1
    • 1 $0.39
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    Central Technologies CTMLP080504BF-4R7M

    4.7UH SMD MULTIL POWER INDUCTOR
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    DigiKey CTMLP080504BF-4R7M Reel 20 1
    • 1 $0.32
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    MLP08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSA0024094

    Abstract: No abstract text available
    Text: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well


    Original     		PDF FDMC7692S FDMC7692S DSA0024094

    FDMC7680

    Abstract: MO-229 148 FSC
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7680 FDMC7680 MO-229 148 FSC

    FDMC7672

    Abstract: MO-229
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672 MO-229

    Untitled

    Abstract: No abstract text available
    Text: FPF2700 / FPF2701 / FPF2702 — AccuPower 0.4~2 A Adjustable Over-Current Protection Load Switches Features Description • •        The AccuPower™ FPF270X series is a family of current-limit load switches that provide full protection to


    Original     		PDF FPF2700 FPF2701 FPF2702 FPF270X com/dwg/ML/MLP08V

    SJ 38

    Abstract: qsc 1110 MicroPak-10 dqfn8 SJ38 mac010a M14D M16D jedec sot-23 6 lead MTC14
    Text: Revised February 2004 Logic and Switch Products Ordering Information Ordering Information TinyLogic is a trademark of Fairchild Semiconductor Corporation. CROSSVOLT, FACT, FACT Quiet Series, FAST, FASTr, and MicroPak are trademarks of Fairchild Semiconductor Corporation.


    Original     		PDF MS012540 SJ 38 qsc 1110 MicroPak-10 dqfn8 SJ38 mac010a M14D M16D jedec sot-23 6 lead MTC14

    PHILIPS toroidal core 2P80

    Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
    Text: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs


    Original     		PDF CBW204 TN33/20/11 TN33/20/11-2P40 TN33/20/11-2P50 TN33/20/11-2P65 TN33/20/11-2P80 TN33/20/11-2P90 PHILIPS toroidal core 2P80 PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod

    FDMC6675

    Abstract: fairchild top marking FDMC6675BZ mo-229 pad layout MO-229
    Text: FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 mΩ Features General Description „ Max rDS on = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in


    Original     		PDF FDMC6675BZ FDMC6675BZ FDMC6675 fairchild top marking mo-229 pad layout MO-229

    FDMC4435BZ

    Abstract: RCA 395 fairchild top marking mo-229 pad layout trench mosfet MO-229 63A23
    Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC4435BZ FDMC4435BZ RCA 395 fairchild top marking mo-229 pad layout trench mosfet MO-229 63A23

    Untitled

    Abstract: No abstract text available
    Text: FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mΩ Features General Description „ Max rDS on = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC86520L FDMC86520L

    FIN1027

    Abstract: FIN1028 FIN1028M FIN1028MPX M08A MO-229
    Text: Revised June 2003 FIN1028 3.3V LVDS 2-Bit High Speed Differential Receiver General Description Features This dual receiver is designed for high speed interconnects utilizing Low Voltage Differential Signaling LVDS technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels.


    Original     		PDF FIN1028 400Mbs FIN1028 FIN1027, FIN1027 FIN1028M FIN1028MPX M08A MO-229

    Untitled

    Abstract: No abstract text available
    Text: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description ̈ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		PDF FDMC86320

    Untitled

    Abstract: No abstract text available
    Text: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7672 FDMC7672

    FOL216CIW

    Abstract: FAN5602 FAN5602MP33X FAN5602MP45X FAN5602MP5X FOL625CIW
    Text: FAN5602 — Universal Step-Up/Step-Down Charge Pump Regulated DC/DC Converter Features Description • Low-Noise, Constant-Frequency Operation at Heavy The FAN5602 is a universal switched capacitor DC/DC converter capable of step-up or step-down operation.


    Original     		PDF FAN5602 FOL216CIW FAN5602MP33X FAN5602MP45X FAN5602MP5X FOL625CIW

    FDMC86102Z

    Abstract: FDMC86102LZ
    Text: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDMC86102LZ FDMC86102LZ FDMC86102Z

    Untitled

    Abstract: No abstract text available
    Text: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ Features General Description „ Max rDS on = 60mΩ at VGS = 10V, ID = 4.4A „ Low Miller Charge This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has


    Original     		PDF FDM3622

    R015 marking

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V, R015 marking

    LFPAK footprint

    Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
    Text: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.


    Original     		PDF LFPAK56 LFPAK33 LFPAK56, LFPAK footprint PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp

    Untitled

    Abstract: No abstract text available
    Text: FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7664 FDMC7664 FDMC7672

    FDMC7680

    Abstract: MO-229
    Text: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC7680 FDMC7680 MO-229

    FDMC6675

    Abstract: FDMC6675BZ MO-229
    Text: FDMC6675BZ P-Channel Power Trench MOSFET -30 V, -20 A, 14.4 m: Features General Description „ Max rDS on = 14.4 m: at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and


    Original     		PDF FDMC6675BZ FDMC6675BZ FDMC6675 MO-229

    RG 710

    Abstract: FDMC8882 MO-229
    Text: FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m: Features General Description „ Max rDS on = 14.3 m: at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC8882 RG 710 FDMC8882 MO-229

    FDMC7692S

    Abstract: MO-229 APS-5
    Text: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description „ Max rDS on = 9.3 m: at VGS = 10 V, ID = 12.5 A This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially


    Original     		PDF FDMC7692S FDMC7692S MO-229 APS-5

    MLP0603-501

    Abstract: MLS0603-4S7-800 MLP0805-102 MLN1206-122
    Text: FERROXCUBE DATA A SH SHEET EET Multilayer suppressors EMI-suppression products Supersedes data of February 2002 2004 Sep 01 Ferroxcube Multilayer suppressors EMI-suppression products Main applications areas for multilayer suppressors are: • computer and peripheral equipment: mother board,


    Original     		PDF

    FDMC8884

    Abstract: fairchild top marking MO-229 GS 069
    Text: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m: Features General Description „ Max rDS on = 19 m: at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC8884 FDMC8884 fairchild top marking MO-229 GS 069