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    MJ MARKING SOT23 Search Results

    MJ MARKING SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MJ MARKING SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE D29 -08

    Abstract: No abstract text available
    Text: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR302N PG-SC-59 L6327 DIODE D29 -08

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23


    Original     		PDF BSS215P PG-SOT23 IEC61249-2-21 H6327:

    marking k04

    Abstract: STK004SF
    Text: STK004SF Advanced N-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=20V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40mΩ(Max.) D G Ordering Information


    Original     		PDF STK004SF OT-23F KSD-T5C039-002 marking k04 STK004SF

    DIODE k03

    Abstract: BVDSS-30V STK003SF marking code K03
    Text: STK003SF Advanced N-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=30V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40mΩ(Max.) D D G G Ordering Information


    Original     		PDF STK003SF OT-23F KSD-T5C043-002 DIODE k03 BVDSS-30V STK003SF marking code K03

    STJ001SF

    Abstract: BVDSS-20V
    Text: STJ001SF Advanced P-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=-20V Min. Low VGS(th) : VGS(th)=-0.6~-1.4V Small footprint due to small package Low RDS(on) : RDS(on)=88mΩ(Max.) D D G G Ordering Information


    Original     		PDF STJ001SF OT-23F KSD-T5C037-003 STJ001SF BVDSS-20V

    STJ004SF

    Abstract: 150 j04
    Text: STJ004SF Advanced P-Ch Trench MOSFET PORTABLE EQUIPMENT APPLICATION Features •    PIN Connection Low Voltage : BVDSS=-30V Min. Low VGS(th) : VGS(th)=-0.7~-1.4V Small footprint due to small package Low RDS(on) : RDS(on)=91mΩ(Max.) D D G G Ordering Information


    Original     		PDF STJ004SF OT-23F KSD-T5C045-002 STJ004SF 150 j04

    Untitled

    Abstract: No abstract text available
    Text: STK7002B Advanced N-Channel MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=60V Min. Low Crss : Crss=3.1pF(Typ.) Low gate charge : Qg=2.8nC(Typ.) Low RDS(on) : RDS(on)=5.0Ω(Max.) D D Ordering Information


    Original     		PDF STK7002B OT-23 KSD-T5C042-002

    STT5NF30L

    Abstract: No abstract text available
    Text: STT5NF30L N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET II POWER MOSFET TYPE VDSS RDS on ID STT5NF30L 30 V < 0.050 Ω (@ 10V) 4A TYPICAL RDS(on) = 0.039Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™”


    Original     		PDF STT5NF30L OT23-6L STT5NF30L

    DIODE k03

    Abstract: No abstract text available
    Text: STK003SF Advanced N-Ch Trench MOSFET Features •    PIN Connection Low Voltage : BVDSS=30V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40m (Max.) D D Type N o. M a r k ing K03 STK003SF G G Ordering Information


    Original     		PDF STK003SF OT-23F KSD-T5C043-002 DIODE k03

    Untitled

    Abstract: No abstract text available
    Text: STJ004SF Advanced P-Ch Trench MOSFET Features •    PIN Connection Low Voltage : BVDSS=-30V Min. Low VGS(th) : VGS(th)=-0.7~-1.4V Small footprint due to small package Low RDS(on) : RDS(on)=91m (Max.) D D G G Ordering Information Type N o. M a r k ing


    Original     		PDF STJ004SF OT-23F KSD-T5C045-002

    Untitled

    Abstract: No abstract text available
    Text: STK004SF Advanced N-Ch Trench MOSFET Features •    PIN Connection Low Voltage : BVDSS=20V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=40m (Max.) D G Ordering Information Type N o. M a r k ing K04


    Original     		PDF STK004SF OT-23F KSD-T5C039-002

    Untitled

    Abstract: No abstract text available
    Text: STJ001SF Advanced P-Ch Trench MOSFET Features •    PIN Connection Low Voltage : BVDSS=-20V Min. Low VGS(th) : VGS(th)=-0.6~-1.4V Small footprint due to small package Low RDS(on) : RDS(on)=88m (Max.) D D G G Ordering Information Type N o. M a r k ing


    Original     		PDF STJ001SF OT-23F KSD-T5C037-003

    Untitled

    Abstract: No abstract text available
    Text: STK001SF Advanced N-Ch Trench MOSFET Features •    PIN Connection Low Voltage : BVDSS=20V Min. Low VGS(th) : VGS(th)=0.6~1.2V Small footprint due to small package Low RDS(on) : RDS(on)=33m (Typ.) D D G G Ordering Information Type N o. M a r k ing


    Original     		PDF STK001SF OT-23F KSD-T5C044-001

    STT5NF30L

    Abstract: No abstract text available
    Text: STT5NF30L N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L STripFET II POWER MOSFET TYPE VDSS RDS on ID STT5NF30L 30 V < 0.050 Ω (@ 10V) 4A TYPICAL RDS(on) = 0.039Ω @10V LOW Qg LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™”


    Original     		PDF STT5NF30L OT23-6L STT5NF30L

    Untitled

    Abstract: No abstract text available
    Text: TENTATIVE STJ004SF Semiconductor P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=-0.7~-1.4V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 64mΩ (Typ.) Ordering Information


    Original     		PDF STJ004SF OT-23F

    Untitled

    Abstract: No abstract text available
    Text: TENTATIVE STK001SF Semiconductor N-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=0.6~1.2V • Small footprint due to small package • Low RDS (ON) : RDS (ON)= 33mΩ (Typ.) Ordering Information


    Original     		PDF STK001SF OT-23F

    marking LC

    Abstract: SC-59 marking 08 infineon
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR316P PG-SC59 L6327 marking LC SC-59 marking 08 infineon

    Untitled

    Abstract: No abstract text available
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR316P PG-SC59 L6327

    BSR92P

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -250 V 11 W -0.14 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR92P PG-SC59 L6327 BSR92P

    Untitled

    Abstract: No abstract text available
    Text: BSR316P SIPMOS Small-Signal-Transistor Product Summary Features VDS • P-Channel -100 V 1.8 W -0.36 A RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR316P PG-SC59 L6327

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features 60 V VGS=10 V 3 Ω VGS=4.5 V 4 VDS • N-channel RDS on ,max • Enhancement mode • Logic level • Avalanche rated 0.3 ID • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant


    Original     		PDF 2N7002 IEC61249-2-21 PG-SOT23 2N7002 PG-SOT-23 H6327:

    Untitled

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features -250 V 11 Ω -0.14 A VDS • P-Channel RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR92P PG-SC59 L6327

    2N7002 MARKING

    Abstract: No abstract text available
    Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features 60 V VGS=10 V 3 Ω VGS=4.5 V 4 VDS • N-channel RDS on ,max • Enhancement mode • Logic level • Avalanche rated 0.3 ID • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant


    Original     		PDF 2N7002 IEC61249-2-21 PG-SOT23 2N7002 PG-SOT-23 H6327: 2N7002 MARKING

    GS28

    Abstract: No abstract text available
    Text: BSR92P SIPMOS Small-Signal-Transistor Product Summary Features -250 V 11 Ω -0.14 A VDS • P-Channel RDS on ,max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 PG-SC59


    Original     		PDF BSR92P PG-SC59 L6327 GS28