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    MR126L

    Abstract: mixer double balanced mixer RHG mixer RHG RHG Double balanced mixer RHG DM1-18A Mixer mixer rhg ghz DM1-18A DM-118 IF PRODUCT RHG
    Text: SPECIFICATION BULLETIN MR126L DOUBLE BALANCED MIXER RF/LO: 1 to 18 GHz IF: DC to 500 MHz Standard Product Features: • • • • • • • Direct Replacement for RHG DM1-18A Broadband Performance 1 to 18 GHz 6.0 dB Typical Conversion Loss LO Drive Range 7 to 11 dBm


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    PDF MR126L DM1-18A mixer double balanced mixer RHG mixer RHG RHG Double balanced mixer RHG DM1-18A Mixer mixer rhg ghz DM-118 IF PRODUCT RHG

    bma050

    Abstract: mixer rhg ghz mixer RHG BPSK MODULATOR miteq c-22
    Text: Back to Mixer Home Page MODULATOR PRODUCTS Biphase Modulators & Upconverters MODULATOR PRODUCTS QPSK & QAM Modulators SSB Upconverters Vector Modulators Phase Shifters ISO 9001 REGISTERED COMPANY • SSB Upconverters, BPSK, QPSK and QAM Modulators • DSB Upconverters, Vector


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    mixer RHG

    Abstract: mixers
    Text: TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION Application Guidelines 2 QUICK REFERENCE Image Rejection Mixers LNA, IR Mixer, Assemblies 3 4 DETAILED DATA SHEETS Image Rejection Mixers Enhanced Image Rejection Mixers - 30 dB Image Rejection Biasable Image Rejection Mixers - Low LO Power Operation


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    double balanced mixer RHG

    Abstract: mixer RHG RHG Double balanced mixer watkins-johnson Mixer crossreferences Avantek mixers Mixers MESFET IF PRODUCT RHG
    Text: TABLE OF CONTENTS CONTENTS PAGE INTRODUCTION Application Guidelines 2 QUICK REFERENCE Single-, Double- and Triple-Balanced Mixers Biasable, Harmonic and MESFET Mixers 3 4 DETAILED DATA SHEETS Double Balanced – Ultra-Broadband Double Balanced – High Isolation


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    MICROWAVE ASSOCIATES

    Abstract: Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler
    Text: PASSIVE COMPONENTS: A BRIEF HISTORY T Fig. 1 The birth of radar. Courtesy of Varian Associates. ▼ he microwave industry is tied to the birth of radar. Figure 1 is a whimsical look at the birth of radar as portrayed in a 1960s ad for Bomac tubes. In reality, radar


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    PDF 1960s MICROWAVE ASSOCIATES Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler

    mixer RHG

    Abstract: MIL-STD-883 Method 1011
    Text: PASSIVE AND MIXER PRODUCTS TABLE 1A DEVICE SCREENING Reference Document MIL-STD-202 TEST Stabilization Bake [1] Thermal Shock Electrical Test Seal Test — Gross [1] External Visual External Mechanical SAMPLE SIZE 100% 100% 100% 100% 1% AQL 1% AQL METHOD/CONDITION


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    PDF MIL-STD-202) 107/B 112/D 1014/C 1014/A MIL-STD-883) 1010/A mixer RHG MIL-STD-883 Method 1011

    double balanced mixer RHG

    Abstract: DMH2-22 double balanced mixer RHG dmh2 mixer RHG RHG Double balanced mixer rhg mixer mixer rhg ghz
    Text: 'It f l MODEL DOUBLE BALANCED MICROWAVE MIXER 2-22 GHz D M H 2-22 7.5 dB Typical Midband Conversion Loss 25 dB Typical Midband L-R Isolation Guaranteed Specifications* From -55°C to +85°C Frequency Range Conversion Loss RF/IF Isolation RF, LO Ports IF Port


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    PDF DMH2-22 double balanced mixer RHG DMH2-22 double balanced mixer RHG dmh2 mixer RHG RHG Double balanced mixer rhg mixer mixer rhg ghz

    pa 66 gf

    Abstract: mixer RHG J FET AM LNA D218 T2901 TQFP48
    Text: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.


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    PDF t2901 T2901 48ABLE 120nH 21-Sep-99 TQFP48 pa 66 gf mixer RHG J FET AM LNA D218

    VCO TX 09 H2

    Abstract: No abstract text available
    Text: Tem ic U2901B S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The U2901B is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band


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    PDF U2901B U2901B 48-pin D-74025 09-Jun-99 VCO TX 09 H2

    double balanced mixer RHG

    Abstract: DM1-18A RHG Double balanced mixer mixer RHG MR126L mixer rhg ghz MR126 RHG DM1-18A Mixer
    Text: DOUBLE BALANCED 3 to 18 GHz RF • DC to 500 MHz IF 5 V -* FEATURES • Direct RHG DM1-18A replacement • Field-replaceable connectors Model MR126L SPECIFICATIONS Frequency range RF/LO GHz IF (MHz) Conversion loss (dB) LO drive level (dBm) L M* H* Isolation


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    PDF DM1-18A MR126L MR147H) IF-100MHz double balanced mixer RHG RHG Double balanced mixer mixer RHG MR126L mixer rhg ghz MR126 RHG DM1-18A Mixer

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711