MITSUBISHI RF POWER TRANSISTOR Search Results

MITSUBISHI RF POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MITSUBISHI RF POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
shinetsu G746 rohs Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:	Original	PDF	AN-GEN-006-D shinetsu G746 rohs shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
TRANSISTOR D 1785 Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
RD16HHF1 equivalent Abstract: RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet RD16HHF1 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1 equivalent RD16HHF S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET hf power transistor mosfet 1307 TRANSISTOR equivalent mosfet HF amplifier mosfet rd16hhf 24 TRANSISTOR MAKING
RD16HHF1 Abstract: RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD 15 hf mitsubishi RD16HHF1-101 RD16HHF MITSUBISHI RF POWER MOS FET transistor d 1680 mosfet HF amplifier RD16HHF1 application notes RD16H marking L1 fet
A 1469 mosfet Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET
A 1469 mosfet Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
grm708 Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
16HHF1 Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
D 1652 transistor Abstract: MITSUBISHI RF POWER MOS FET RD20HMF1 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers	Original	PDF	RD20HMF1 900MHz RD20HMF1 900MHz-band 900MHz RD20HMFE D 1652 transistor MITSUBISHI RF POWER MOS FET 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748
TRANSISTOR D 1765 320 Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD09MUP2 520MHz, RD09MUP2 520MHz 520MHz) TRANSISTOR D 1765 320 RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
transistor D 1666 Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
transistor t06 Abstract: 828 TRANSISTOR equivalent Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.	Original	PDF	RD00HHS1 30MHz RD00HHS1 30MHz 48MAX 53MAX transistor t06 828 TRANSISTOR equivalent
DIODE GP 704 Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet
RD16HHF1 Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1th RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8

RD02MUS1 Abstract: RD02MUS1-101 T112 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 3M Touch Systems
RD30HVF1 Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.	Original	PDF	RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
RD16HHF1 application notes Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.	Original	PDF	RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
RD07MVS1 Abstract: transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508
100OHM Abstract: RD30HUF1 IDQ10 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.	Original	PDF	RD30HUF1 520MHz RD30HUF1 520MHz 100OHM IDQ10
Mitsubishi transistor C 1588 Abstract: S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W RD30HUF1 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.	Original	PDF	RD30HUF1 520MHz RD30HUF1 520MHz Mitsubishi transistor C 1588 S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W
2779, transistor Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	PDF	RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547
Untitled Abstract: No abstract text available Text: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.	OCR Scan	PDF	GG1SE71 2SC2797 2SC2797
mitsubishi rf power selection Abstract: No abstract text available Text: MITSUBISHI RF POWER DEVICE PRECAUTIONS AND RECOMMENDATIONS GENERAL Mitsubishi RF Power Devices designed for mobile and radio, 9.6V, 7.2V for portable radio. For base bias lead or lead portable radio applications have high reliability and good which performance, as they are designed and manufactured under	OCR Scan	PDF
2SC2312 Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating	OCR Scan	PDF	2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb

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MITSUBISHI RF POWER TRANSISTOR Search Results

MITSUBISHI RF POWER TRANSISTOR Result Highlights (5)

MITSUBISHI RF POWER TRANSISTOR Datasheets Context Search

shinetsu G746 rohs

TRANSISTOR D 1785

RD16HHF1 equivalent

RD16HHF1

A 1469 mosfet

A 1469 mosfet

grm708

16HHF1

D 1652 transistor

TRANSISTOR D 1765 320

transistor D 1666

transistor t06

DIODE GP 704

RD16HHF1

RD02MUS1

RD30HVF1

RD16HHF1 application notes

RD07MVS1

100OHM

Mitsubishi transistor C 1588

2779, transistor

Untitled

mitsubishi rf power selection

2SC2312