RA60H1317M1
Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series
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AN-GEN-026-E
AN-GEN-026-E
RA30H4452M
440-520MHz,
200pF,
RA60H1317M1
FET 4900
mitsubishi rf
"RF Power Modules"
175mhz 12.5v 40w
RA30H1317M
RA13H1317M
RA03M8087M
RA30H4452M
RA35H1516M
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shinetsu G746 rohs
Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:
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AN-GEN-006-D
shinetsu G746 rohs
shinetsu G746
G746
sirf iii chip
MITSUBISHI APPLICATION NOTE RF POWER
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rd02mus1
Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-017
RD02MUS1
RD02MUS1.
RD02MUS1:
023XA"
146MHz
175MHz
440MHz
450MHz
470MHz
AN-UHF-017
146MHz
488-MHz
RD02MUS1 equivalent
ANUHF017
MITSUBISHI APPLICATION NOTE RF POWER
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RD01MUS1
Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with
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AN-UHF-019
RD01MUS1
RD01MUS1.
RD01MUS1:
022XA"
136MHz
155MHz
175MHz
520MHz
0mm/50
micro strip line
MITSUBISHI APPLICATION NOTE RF POWER
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RD12MVP1
Abstract: RD12MVS1
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
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AN-VHF-034
RD12MVP1
135-175MHz
RD12MVP1:
059XA-G"
175MHz:
135/155/175MHz:
RD12MVS1
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RD07MVS1
Abstract: micro strip line
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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AN-UHF-018-B
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
micro strip line
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RD09MUP2
Abstract: 555 application note
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout
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AN-UHF-072
RD09MUP2"
400-520MHz
RD09MUP2
RD09MUP2:
059XA-G"
400/520MHz
520MHz
3mm/50OHM
330pF
555 application note
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AN-UHF-027-B
Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency
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AN-UHF-027-B
RD07MVS1
RD07MVS1.
RD07MVS1:
031AA"
450-520MHz
AN-UHF-027-B
450-520MHz)
adj 2576
6926 b 946
MITSUBISHI APPLICATION NOTE RF POWER
mitsubishi 5247
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transistor t06
Abstract: 828 TRANSISTOR equivalent
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
48MAX
53MAX
transistor t06
828 TRANSISTOR equivalent
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RD07MVS1
Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency
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AN-900-006
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
17mml
MITSUBISHI APPLICATION NOTE RF POWER
gp 735
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diode gp 429
Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data
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AN-900-028
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
diode gp 429
RD01MUS1
RD07M
RD07MVS
AN-900-028
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RD07MVS1
Abstract: RD01MUS1
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data
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AN-900-008
RD01MUS1
RD07MVS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
RD07MVS1
740-870MHz
RD01MUS1
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mitsubishi rf power selection
Abstract: No abstract text available
Text: MITSUBISHI RF POWER DEVICE PRECAUTIONS AND RECOMMENDATIONS GENERAL Mitsubishi RF Power Devices designed for mobile and radio, 9.6V, 7.2V for portable radio. For base bias lead or lead portable radio applications have high reliability and good which performance, as they are designed and manufactured under
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.
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GG1SE71
2SC2797
2SC2797
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M68732SHA
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SHA Silicon MOS FET Power Amplifier, 470-520MHz 6.7W FM PORTABLE PIN: l.Pin :RF INPUT :GATE BIAS SUPPLY 3 .V D D :DRAIN BIAS SUPPLY 4 .P0 :RF OUTPUT
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M68732SHA
470-520MHz
25deg
50ohms
50ohms
M68732SHA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57739C 824~849MHz, 12.5V, 6W, FM MOBILE RADIO PIN : P in ©VCCI VCC2 ®Po ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted) Symbol Vcci Vcc2 Icc
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M57739C
849MHz,
0Qlb204
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm <5> «Hh PIN : Pin DVCC1 (DVCC2 VCC3 ©Po ®GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN
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M57788L
400-430MHZ,
400MHz
430MHz
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pj 70
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67769C 889-915MHz, 12.5V, 13W, FM MOBILE RADIO PIN : <DPin : RF INPUT VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY ®VCC3 : 3rd. DC SUPPLY ®PO : RF OUTPUT <g GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25X unless otherwise noted)
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M67769C
889-915MHz,
-----ICC31
pj 70
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transistor tc 144 m57726
Abstract: m57726
Text: MITSUBISHI RF POWER MODULE M57726 144-148MHz, 12.5V, 43W, FM MOBILE RADIO BLOCK DIAGRAM <f> PIN : CDPin : RF INPUT ®VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @Po : RF OUTPUT ®GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted
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M57726
144-148MHz,
transistor tc 144 m57726
m57726
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO Rn ©VCCI VCC 2 ®VCC3 ©Po ©GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 ‘C unless otherwise noted
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M57704SH
490-512MHz,
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Untitled
Abstract: No abstract text available
Text: . MITSUBISHI RF POWER MODULE bSMiaSÌ 0Q17475 232 • - M67798LA 144-148MHz, 9.6V, 8W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin @VGG VDD ®P0 ®GND : RF INPUT : GATE BIAS SUPPLY : DRAIN BIAS SUPPLY : RF OUTPUT : FIN H46
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0Q17475
M67798LA
144-148MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57714UH 470-490MHz, 12.5V, 7W, FM MOBILE RADIO PIN : t Rn VCCI ®VCC2 &VCC3 ®PO ® GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY ; RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25T: unless otherwise noted)
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M57714UH
470-490MHz,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67741H 150-175MHz, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM PIN : Pin : RF INPUT ©VCCI : 1st. DC SUPPLY <S VCC2 : 2nd. DC SUPPLY @P0 : RF OUTPUT GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 X i unless otherwise noted) Symbol
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M67741H
150-175MHz,
150MHz
163MHz
175MHz
175MHz
002SESQ
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57704EL 335-360MHZ, 12.5V, 13W, FM MOBILE RADIO P in VCC! ®VCC2 ®VCC3 ®PO ®GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted
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M57704EL
335-360MHZ,
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