MICROWAVE HEATING EQUATIONS Search Results

MICROWAVE HEATING EQUATIONS Result Highlights (5)

Part	Manufacturer	Description
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)
ISL55016IRTZ-T7	Renesas Electronics Corporation	MMIC Silicon Bipolar Differential Amplifier
ISL55014IEZ-T7	Renesas Electronics Corporation	MMIC Silicon Bipolar Broadband Amplifier
ISL55012IEZ-EVAL	Renesas Electronics Corporation	MMIC Silicon Bipolar Broadband Amplifier Evaluation Board
ISL55015IEZ-T7	Renesas Electronics Corporation	MMIC Silicon Bipolar Broadband Amplifier

MICROWAVE HEATING EQUATIONS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
a1270* transistor Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141 Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2	Original	PDF	R123-R181, 5091-6489E 5968-1410E a1270* transistor computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
a1270* transistor Abstract: 1689c hp plotter Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2	Original	PDF	5091-6489E 5968-1410E a1270* transistor 1689c hp plotter
siliconix vmp4 Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc	Original	PDF	99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
body contact FET soi RF switch Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier Text: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises	Original	PDF
Combiners Abstract: m561 power combiner broadband transformers wilkinson power divider wilkinson divider THREE PHASE ISOLATION TRANSFORMER CONSTRUCTION DETAIL 2-WAY POWER DIVIDER signal path designer Text: Application Note Power Dividers/Combiners M561 V2.00 Introduction A power divider is ideally a lossless reciprocal device which can also perform vector summation of two or more signals and thus is sometimes called a power combiner or summer. Two forms of power dividers are generally	Original	PDF
Untitled Abstract: No abstract text available Text: PAGE 1 • MAY 2009 FEATURE ARTICLE www.mpdigest.com RF/Microwave Solid State Switches by Rick Cory, Skyworks Solutions, Inc. Introduction olid state switches are ubiquitous in modern RF/microwave systems. They are utilized to control signal flows, select signal sources and for many	Original	PDF	APN1002,
GaAs FET operating junction temperature Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2 Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .	Original	PDF	ED-19, 5966-3084E GaAs FET operating junction temperature 5257 transistor chip die hp transistor HP transistor cross reference mtt2
power Junction FET advantages and disadvantages Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor	Original	PDF	ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
systron Donner 410 Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES	Original	PDF	MIL-STD-750E MIL-STD-750D systron Donner 410 MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
MICROWAVE ASSOCIATES ISOLATOR Abstract: AS218 transistor Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and	Original	PDF	CAT501-09A MICROWAVE ASSOCIATES ISOLATOR AS218 transistor
TRANSISTOR SMD MARKING CODE NM Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is	Original	PDF	MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
smd-transistor DATA BOOK Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A Text: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance	Original	PDF	MC3403 2N2219 1N4148 MBC775 smd-transistor DATA BOOK smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
gsm booster circuit Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060 Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers	Original	PDF	SG1009Q42007 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit mrf373al u880 RF MODULATORS mrf9030n MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
equivalent components of diode ak 03 Abstract: No abstract text available Text: Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS-285L/P HSMS-286L/P/R Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz	Original	PDF	OT-363 SC-70, HSMS-285L/P HSMS-286L/P/R 5966-2032E equivalent components of diode ak 03

laser diode spice modeling Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these	Original	PDF	42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
KDI attenuator Abstract: Triangle Microwave digital attenuator df-1073 PPT Diode specifications Text: TECHNICAL OVERVIEW ATTENUATORS GENERAL INFORMATION Attenuators are commonly used to: 1 Reduce signal or power levels. 2) Provide isolation for improved impedance match between source and load. 3) Measure the gain or loss through substitution method. Three basic types of coaxial transmission line attenuators are presented in	OCR Scan	PDF
TRANSISTOR SUBSTITUTION 1993 Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor Text: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: APPLICATION NOTES THERMAL RESISTIVITY TABLE SIMPLIFIES TEMPERATURE CALCULATIONS How much power can a microwave device handle before it overheats? Here is a good approximation technique for determining “hot spots” of different structures. Reprinted with permission from Microwaves/RF	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: TYPICAL THERMISTOR APPLICATIONS 1. TELECOMMUNICATIONS APPLICATIONS Temperature Compensation of Crystal Oscillators TCXO Gain Stabilization Transistor Temperature Compensation Ambient Temperature Compensation 2. INDUSTRIAL APPLICATIONS Heat Pump Sensors Chiller Sensors	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: W hü1 H E W L E T T mLttM P A C K A R D Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/nW at 915 MHz Up to 35 mV/nW at 2.45 GHz Up to 25 mV/nW at 5.80 GHz	OCR Scan	PDF	OT-363 SC-70, 285L/P 286L/P/R
HSMS-Z85A Abstract: HSMS-Z86A metal detector circuit with pcb k and ka band radar detector marking code ER sot 143 HSMS-286L sot143 Marking code RY receiver transmitter 1.2 ghz video Text: WSbÌ hewlett mL'HM P AC KAR D Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMS-285L/P HSMS-286L/P/R Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/jLiW at 915 MHz Up to 35 mV/jLiW at 2.45 GHz	OCR Scan	PDF	OT-363 SC-70, HSMS-285L/P HSMS-286L/P/R OT-363 HSMS-286L/P/R 5966-2032E HSMS-Z85A HSMS-Z86A metal detector circuit with pcb k and ka band radar detector marking code ER sot 143 HSMS-286L sot143 Marking code RY receiver transmitter 1.2 ghz video
trw RF POWER TRANSISTOR Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .	OCR Scan	PDF
1N23 diode Abstract: SINGLE ENDED MIXER 1N23 ALPHA 1N23 Diode Holder surface mount zero-bias detector diode silicon di for microwave diode mixer x-band motion detector metal diode Silicon Point Contact Mixer Diodes zero bias diode Text: Application Note 80800: Mixer and Detector Diodes 2. BONDED CONTACT This construction features a gold wire bonded from the rim of the package to a bonding pad on the chip and then to the rim opposite the first bond. A cap is then soldered to this rim thus completing the assembly and	OCR Scan	PDF

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MICROWAVE HEATING EQUATIONS Search Results

MICROWAVE HEATING EQUATIONS Result Highlights (5)

MICROWAVE HEATING EQUATIONS Datasheets Context Search

a1270* transistor

a1270* transistor

siliconix vmp4

body contact FET soi RF switch

Combiners

Untitled

GaAs FET operating junction temperature

power Junction FET advantages and disadvantages

systron Donner 410

MICROWAVE ASSOCIATES ISOLATOR

TRANSISTOR SMD MARKING CODE NM

smd-transistor DATA BOOK

gsm booster circuit

equivalent components of diode ak 03

laser diode spice modeling

MMZ20363B

KDI attenuator

TRANSISTOR SUBSTITUTION 1993

Untitled

Untitled

Untitled

HSMS-Z85A

trw RF POWER TRANSISTOR

1N23 diode