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    MICROSEMI UB PACKAGE TAPE REEL Search Results

    MICROSEMI UB PACKAGE TAPE REEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    MICROSEMI UB PACKAGE TAPE REEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3866 A UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a top hat leaded TO-205AD package.


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    PDF 2N3866 MIL-PRF-19500/398 O-205AD T4-LDS-0175-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power


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    PDF 2N5114UB 2N5116UB MIL-PRF-19500 2N5114 2N5116 T4-LDS-0006-1,

    2N2857UB

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


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    PDF 2N2857UB MIL-PRF-19500/343 2N2857. T4-LDS-0223-1,

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    Abstract: No abstract text available
    Text: 2N2944AUB 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to


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    PDF 2N2944AUB 2N2946AUB MIL-PRF-19500/382 2N2944AUB 2N2946AUB 2N2944A 2N2946A MIL-PRF-19500/382s T4-LDS-0236-1,

    EIA-418D

    Abstract: No abstract text available
    Text: 2N2944AUB 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to


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    PDF 2N2944AUB 2N2946AUB MIL-PRF-19500/382 2N2944AUB 2N2946AUB 2N2944A 2N2946A MIL-PRF-19500/382 T4-LDS-0236-1, EIA-418D

    Untitled

    Abstract: No abstract text available
    Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power


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    PDF 2N5114UB 2N5116UB MIL-PRF-19500 2N5114 2N5116 T4-LDS-0006-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power


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    PDF 2N5114UB 2N5116UB MIL-PRF-19500 2N5114 2N5116 MIL-PRF-19500 gr108 T4-LDS-0006-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial


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    PDF 2N2857UB MIL-PRF-19500/343 2N2857UB 2N2857. T4-LDS-0223-1,

    1N4148 JANTX microsemi

    Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
    Text: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching


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    PDF 1N4148UB MIL-PRF-19500/116 1N4148UB MIL-PRF-19500/116. 1N4148 T4-LDS-0281-2, 1N4148 JANTX microsemi 1N4148 JANTX 1N4148 JANTXV 1n4148 general diode microsemi 1n4148 EIA-418D

    JANS2N3700UB

    Abstract: microsemi ub package tape reel 2N3700
    Text: JANS_2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.


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    PDF 2N3700UB MIL-PRF-19500/391 2N3700. T4-LDS-0263-1, JANS2N3700UB microsemi ub package tape reel 2N3700

    Untitled

    Abstract: No abstract text available
    Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability


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    PDF 2N3700UB MIL-PRF-19500/391 2N3700UB 2N3700 MIL-PRF-19500/391. 2N3700UB. T4-LDS-0185-3,

    2N3700UB

    Abstract: 2N3700
    Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability


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    PDF 2N3700UB MIL-PRF-19500/391 2N3700UB 2N3700 MIL-PRF-19500/391. O-206AA) T4-LDS-0185-3,

    JANS2N3700UB

    Abstract: microsemi ub package tape reel
    Text: JANS_2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.


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    PDF 2N3700UB MIL-PRF-19500/391 2N3700. T4-LDS-0263-1, JANS2N3700UB microsemi ub package tape reel

    Untitled

    Abstract: No abstract text available
    Text: 2N3960UB Qualified Levels: JAN, JANTX, AND JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960UB epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a low profile ceramic UB package. This device is also


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    PDF 2N3960UB MIL-PRF-19500/399 2N3960UB 2N3960 MIL-PRF-19500/366. T4-LDS-0161-1,

    2N2907AUB

    Abstract: No abstract text available
    Text: MSR2N2907AUB / UBC Screened Levels: MSR Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2907AUB 100 Krad 100 Krad DESCRIPTION This RHA level PNP switching transistor, 2N2907A device in a UB package, is ideal to drive


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    PDF MSR2N2907AUB MIL-PRF-19500 MSR2N2907AUB 2N2907A EEE-INST-002 T4-LDS-0339-2, 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2369AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to


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    PDF MSR2N2369AUB MIL-PRF-19500 MSR2N2369AUB 2N2369A EEE-INST-002 T4-LDS-0338-3,

    Untitled

    Abstract: No abstract text available
    Text: MSR2N2222AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2222AUB 100 Krad 100 Krad DESCRIPTION This RHA level high speed switching NPN transistor, 2N2222A in a UB or UBC ceramic


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    PDF MSR2N2222AUB MIL-PRF-19500 MSR2N2222AUB 2N2222A EEE-INST-002 T4-LDS-0337-2,

    msc ls1

    Abstract: No abstract text available
    Text: 2N3501UB Qualified Levels: JAN, JANTX, JANTXV AND JANS RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for highreliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as


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    PDF 2N3501UB MIL-PRF-19500/366 2N3501 T4-LDS-0276-3, msc ls1

    2n3501ub

    Abstract: microsemi ub package tape reel jans2n3501ub
    Text: JANS 2N3501UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA


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    PDF 2N3501UB MIL-PRF-19500/366 2N3501, T4-LDS-0056-2, microsemi ub package tape reel jans2n3501ub

    1N5711UB

    Abstract: No abstract text available
    Text: 1N5711UB and 1N5712UB CC, CA, & D Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Diode Ceramic Surface Mount Compliant Qualified per MIL-PRF-19500/444 DESCRIPTION This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military


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    PDF 1N5711UB 1N5712UB MIL-PRF-19500/444 1N5712UB 1N5711, 1N5712 MIL-PRF-19500/444 T4-LDS-0040-2,

    EIA-418D

    Abstract: 2N3501U4
    Text: 2N3501UB Qualified Levels: JAN, JANTX, JANTXV AND JANS NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 DESCRIPTION This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for highreliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as


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    PDF 2N3501UB MIL-PRF-19500/366 2N3501 T4-LDS-0276-3, EIA-418D 2N3501U4

    Untitled

    Abstract: No abstract text available
    Text: MSR2N3700UB Screened Levels: MSR Rad Hard Low Power NPN Silicon Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N3700UB 100 Krad 100 Krad DESCRIPTION This RHA level low power NPN switching transistor, 2N3700 device in a UB and UBC package,


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    PDF MSR2N3700UB MIL-PRF-19500 2N3700 EEE-INST-002 com28 T4-LDS-0340-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N4957UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Surface Mount PNP Silicon VHF-UHF Amplifier Transistors Qualified per MIL-PRF-19500/426 DESCRIPTION The 2N4957UB is a military qualified silicon PNP amplifier transistor designed for VHF-UHF equipment and other high-reliability applications. Common applications include high gain low


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    PDF 2N4957UB MIL-PRF-19500/426 2N4957UB 2N4957 T4-LDS-0313-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N4261UBC Compliant PNP Small Signal Silicon Transistor Qualified Levels: JANS Qualified per MIL-PRF-19500/511 DESCRIPTION This 2N4261UBC small signal transistor features ceramic bodied construction with a ceramic lid for military grade products per MIL-PRF-19500/511. It is also available with the standard


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    PDF 2N4261UBC MIL-PRF-19500/511 2N4261UBC MIL-PRF-19500/511. 2N4261 T4-LDS-0150-2,