MICRON RESISTOR TCR Search Results

MICRON RESISTOR TCR Result Highlights (5)

Part	Manufacturer	Description
37-1409	Coilcraft Inc	Tuning tool
37-2182	Coilcraft Inc	Tuning tool
AA1A4M-A	Renesas Electronics Corporation	Built-in Resistor Bipolar Transistors, , /
AA1A3Q-A	Renesas Electronics Corporation	Built-in Resistor Bipolar Transistors, , /
GA4L3Z(0)-T1-AT	Renesas Electronics Corporation	Built-in Resistor Bipolar Transistors

MICRON RESISTOR TCR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CMOS Process Family Abstract: 0.6 um cmos process Text: 4 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters Double Poly / Double Metal 8 µm Poly and Metal Pitch 10 Volts Maximum Operating Voltage 15 Volts High Voltage Option Isolated Vertical PNP Bipolar Module Low TCR Resistor Module	Original	PDF	-10mA CMOS Process Family 0.6 um cmos process
micron resistor TCR Abstract: CMOS Process Family micron resistor 1.2 Micron CMOS Process Family Text: 5 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 10 µm Poly and Metal Pitch • Low TCR Resistor Module Description The Mitel 5µm process is a double poly/double metal CMOS process with an operating voltage range from	Original	PDF	50x50 micron resistor TCR CMOS Process Family micron resistor 1.2 Micron CMOS Process Family
P-MOSFET Abstract: mosfet 4800 micron resistor 0.6 um cmos process 3-Micron-CMOS-Process 4800 mosfet MOSFET dynamic parameters 1.2 Micron CMOS Process Family Text: 3 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 6 µm Poly Pitch; 7 µm Metal Pitch • 7 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 10 Volts High Voltage Option • Low TCR Resistor Module	Original	PDF
Untitled Abstract: No abstract text available Text: AP5025 8 Watt Current Sense Chip Resistors A very high power current sense chip resistor capable of dissipating 8 watts with recommended thermal management architecture on the PCB. • Power Dissipation 8 watts with 700 micron PCB thermal Pad • Low resistance values	Original	PDF	AP5025
RESISTOR 5025 1W Abstract: R002F RESISTOR 5025 R005-F R003F r005f micron marking code information r001 175C R001F Text: 8W CURRENT DETECT CHIP RESISTORS Features…………………………………………………………. Non inductive design. Low TCR, typically less than 30ppm/°C. Low profile surface mount package. Excellent pulse/surge performance. 8W power rating.	Original	PDF	30ppm/ RESISTOR 5025 1W R002F RESISTOR 5025 R005-F R003F r005f micron marking code information r001 175C R001F
R005F Abstract: R002F r001f R003F RESISTOR 5025 1W RESISTOR 5025 R004F R005-F RESISTOR 5025 8W r001 Text: 8W CURRENT DETECT CHIP RESISTORS Features…………………………………………………………. Non inductive design. Low TCR, typically less than 30ppm/°C. Low profile surface mount package. Excellent pulse/surge performance. 8W power rating.	Original	PDF	30ppm/ R005F R002F r001f R003F RESISTOR 5025 1W RESISTOR 5025 R004F R005-F RESISTOR 5025 8W r001
equivalent of 662K Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W 662k MPR 55 F resistor ceramic MDS-1212 ML10L meg05n Text: Micron Power Resistors Part Numbering System M N S Type MP - Pin terminal MH - Lug terminal MN - Vertical lead terminal MNS 0 5 Rated power 02 - 2W 10 - 10W 15 - 15W Element G-wire -wound type ceramic core S-Wire -wound type. (glass fiber core) R-Metal Oxide Film	Original	PDF
0.6 um cmos process Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family Text: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option	Original	PDF	fam10-04 0.6 um cmos process CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
CMOS Process Family Abstract: 1.5um cmos process family Text: 1.5 Micron CMOS Process Family  February 1996 Features Technology Outline • • • • • • • • LOVMOS Processes 2.7~3.6 Volts Low Voltage Option 1.2 Volts Very Low Voltage Option 5.5 Volts Maximum Operating Voltage Double Poly / Double Metal	Original	PDF
r001f Abstract: No abstract text available Text: 8W Current Sense Chip Resistors BCS 8 Series • Non inductive design. · Low TCR, typically less than 100ppm/°C. · Low profile surface mount package. · Excellent pulse/surge performance. · 8W power rating. Applications · Current sense applications · Over current protection in Battery chargers.	Original	PDF	100ppm/ R001F r001f
Untitled Abstract: No abstract text available Text: 8W Current Sense Chip Resistors BCS 8 Series • · · · · Non inductive design. Low TCR, typically less than 100ppm/°C. Low profile surface mount package. Excellent pulse/surge performance. 8W power rating. Applications Current sense applications Over current protection in Battery chargers.	Original	PDF	100ppm/Â R001ance
CMOS Process Family Abstract: P-MOSFET transistor P-MOSFET process of mosfet micron resistor Text: 2 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 4 µm Poly and Metal I Pitch • 320 ps Delay per stage Ring Osc. • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • Shrinkable to Mitel 1.5µm Process	Original	PDF
p-mosfet Abstract: Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters Text: 4 Micron CMOS Process Family  June 1995 Process Parameters Features 4µm 4µm • Double Poly / Double Metal • 8 µm Poly and Metal Pitch • 10 Volts Maximum Operating Voltage Metal I pitch width/space 4/4 4 /4 µm • 15 Volts High Voltage Option	Original	PDF	-10mA p-mosfet Bipolar Junction Transistor MOSFET 1000 VOLTS p7094 0.7 um CMOS process parameters
micron resistor Abstract: CMOS Process Family Text: 2 Micron CMOS Process Family  February 1996 Features • • • • • • • • • Process Parameters Double Poly / Double Metal 4 µm Poly and Metal I Pitch 320 ps Delay per stage Ring Osc. 5.5 Volts Maximum Operating Voltage 2.7~3.6 Volts Low Voltage Option	Original	PDF

1.2 Micron CMOS Process Family Abstract: CMOS Process Family 5-Micron-CMOS-Process 1.5um cmos process family 0.6 um cmos process Text: 1.5 Micron CMOS Process Family  June 1995 Features Process Parameters • Double Poly / Double Metal • 3 µm Poly and Metal I Pitch • 5.5 Volts Maximum Operating Voltage • 2.7~3.6 Volts Low Voltage Option • 1.5µm Process Parameters 5volts & 3volts	Original	PDF
Untitled Abstract: No abstract text available Text: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of	OCR Scan	PDF	ALA400/401 ALA400/401
Untitled Abstract: No abstract text available Text: ALA300/301 9Q-V0LT LINEAR ARRAYS Description The ALA300/301 Linear Arrays provide design engineers the means to obtain 90 V semi-custom integrated circuits. The single-module array ALA300 consists of 13 vertical NPN and 15 vertical PNP transistors, three 6 pF capacitors, and 1k	OCR Scan	PDF	ALA300/301 ALA300/301 ALA300) ALA301) 90-VQLT 90-VOLT
Untitled Abstract: No abstract text available Text: * AT&T Preliminary Data Sheet ALA400/401 Linear Array Family Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology	OCR Scan	PDF	ALA400/401 51AL230240 D-8000 DS87-61LBC
pnp 8 transistor array Abstract: ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET Text: AT&T Preliminary Data Sheet ALA400/401 Linear Array Fam ily Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology	OCR Scan	PDF	ALA400/401 51AL230240 D-8000 DS87-61LBC pnp 8 transistor array ALA400 transistor BIPOLAR npn 8 transistor array 1000 volt pnp transistor JFET 401 ARRAY resistor DS87-61LBC kss 216 complementary JFET
Untitled Abstract: No abstract text available Text: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design	OCR Scan	PDF	LA400 50AL203140 DS86-352LBC
BD 104 NPN Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN Text: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	PDF	LA400 50AL203140 DS86-352LBC BD 104 NPN pnp 8 transistor array npn 8 transistor array BD+104+NPN
pnp 8 transistor array Abstract: ALA401 Boron 220 resistor array ALA402 RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY Text: A T & T MELEC I C 2SE D • G0 5 G 0 2 b 000^54 1 Preliminary Data Sheet ALA401/402 Semicustom Linear Arrays Description The ALA401/402 Semicustom Linear Arrays are fabricated using a complementary bipolar integrated cir cuit (CBIC) process that offers the advantages of vertical NPN and PNP transistors. CBIC technology	OCR Scan	PDF	005005b 0002T54 ALA401/402 ALA401 ALA402 5002b 100x10-3 pnp 8 transistor array Boron 220 resistor array RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY
pnp 8 transistor array Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor Text: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval	OCR Scan	PDF	LA400 rev400 50AL203140 DS86-352LBC pnp 8 transistor array BD 104 NPN ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor
K1HC Abstract: No abstract text available Text: b l 1 1 5 Ml Q Q 1 Q D 3 S fiflfl • URN ADVANCE MT9LD T 272 C 2 MEG X 72 DRAM MODULE MICRON M SEMICONDUCTOR INC. DRAM MODULE 2 MEG X 72 DRAM ECC, 3.3V FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View) • Industry-standard ECC pinout in a 168-pin, dual read	OCR Scan	PDF	168-pin, 800mW 048-cycle 84-Position 168-Pin K1HC

MICRON RESISTOR TCR Search Results

MICRON RESISTOR TCR Result Highlights (5)

MICRON RESISTOR TCR Datasheets Context Search

CMOS Process Family

micron resistor TCR

P-MOSFET

Untitled

RESISTOR 5025 1W

R005F

equivalent of 662K

0.6 um cmos process

CMOS Process Family

r001f

Untitled

CMOS Process Family

p-mosfet

micron resistor

1.2 Micron CMOS Process Family

Untitled

Untitled

Untitled

pnp 8 transistor array

Untitled

BD 104 NPN

pnp 8 transistor array

pnp 8 transistor array

K1HC