APT9403
Abstract: 3000-4-CMD5005 mosfet power hf 1kw CMD5005 APT9302 RC07 768XT188 AP031HV Class B power amplifier, 13.56MHz 13.56Mhz class e power amplifier
Text: APT9403 By: Kenneth Dierberger Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Presented at RF Expo East November 1994 Simple and Inexpensive High-Efficiency Power Amplifier Using New APT MOSFETs Kenneth Dierberger Applications Engineering Manager
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APT9403
APT9403
3000-4-CMD5005
mosfet power hf 1kw
CMD5005
APT9302
RC07
768XT188
AP031HV
Class B power amplifier, 13.56MHz
13.56Mhz class e power amplifier
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TAF200
Abstract: sendust tdk ferrite cores for smps iron eddy current hysteresis loss micrometals Arnold Magnetics 75H-TAF200 75-TAF200 dimmer chokes iron core transformer
Text: Powder Cores / Distributed Gaped Core Selection Guide Introduction This application guide presents some general guidelines for the optimum choice of powder core materials MPP, Sendust/Kool Mu1, High Flux or Iron Powder for different inductor, choke and filter design requirements. The choice of one
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75-TAF200
TAF200
sendust
tdk ferrite cores for smps
iron eddy current hysteresis loss
micrometals
Arnold Magnetics
75H-TAF200
dimmer chokes
iron core transformer
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27.12Mhz
Abstract: PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations
Text: Application Note 1813 September 2010 27.12 MHz, CLASS-E, 600W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 [email protected] The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver
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DRF1200
DRF1200/Class-E
ERJ-ENF1001V
ERJ-6ENF51R1V
269W-1
ERJ-6ENF5110V
BZX84C5V1-7-F
27.12Mhz
PRF-1150
oscillator 27.12mhz
circuit diagram of 13.56MHz RF Generator
600w schematic diagram switching power supply
zener diode c24 5t
5.1V DIODE ZENER
Zener LED
ramp generator 555
rf toroid design considerations
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SD1446
Abstract: arco 467 arco 468 arco SD1446 16 pins M113 micrometals T50-2 transistor sd1446 arco 1.05
Text: SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION P OUT = 70 W MIN. WITH 10 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1446 BRANDING SD1446 PIN CONNECTION DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
SD1446
arco 467
arco 468
arco
SD1446 16 pins
M113
micrometals T50-2
transistor sd1446
arco 1.05
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arco 465
Abstract: arco 469 SD1487 100WPEP arco 463
Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon
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SD1487
SD1487
arco 465
arco 469
100WPEP
arco 463
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arco 468
Abstract: sd1446 arco 467 micrometals T50-2 M113 arco 463
Text: SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1446 BRANDING SD1446 PIN CONNECTION DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
SD1446
arco 468
arco 467
micrometals T50-2
M113
arco 463
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arco 469
Abstract: arco 465 100WPEP SD1487 arco 463
Text: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION
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SD1487
SD1487
arco 469
arco 465
100WPEP
arco 463
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300 watt hf transistor 12 volt
Abstract: arco 467 sd1405 150 watt hf transistor 12 volt arco 465 60WP 100 watt hf transistor 12 volt arco 463
Text: SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS COMMON EMITTER IMD −32 dB GOLD METALLIZATION P OUT = 75 W MIN. WITH 13 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1405 BRANDING SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon
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SD1405
SD1405
300 watt hf transistor 12 volt
arco 467
150 watt hf transistor 12 volt
arco 465
60WP
100 watt hf transistor 12 volt
arco 463
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SD1446
Abstract: arco 468 M113
Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
SD1446
arco 468
M113
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circuit diagram of 13.56MHz RF Generator
Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
Text: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 [email protected] The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET
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DRF1200
DRF1200/Class-E
an6-13131-1-ND
DRF1200
140-XRL16V10-RC
GRM21BR71H474KA88L
140-XRL35V10-RC
circuit diagram of 13.56MHz RF Generator
schematic rf Power supply 500w
PRF-1150
schematic rf Power supply 500w 13.56MHz
1kw mosfet
GRM21BR71H474KA88L
13.56MHZ mosfet
zener diode c24 5t
RF inductor 13.56 MHz
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SD1487
Abstract: 150 watt hf transistor 12 volt Date Code Marking STMicroelectronics arco 465
Text: SD1487 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • 30 MHz Figure 1. Package ■ 12.5 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 100 W MIN. WITH 12.0 dB GAIN DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon
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SD1487
SD1487
150 watt hf transistor 12 volt
Date Code Marking STMicroelectronics
arco 465
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680uF 35V capacitor equivalent
Abstract: t3026 PE-53681 T-30-26 PE53681 diode L2 32CTQ030 BAV99 EL7571C PE-53700
Text: EL7571C Programmable DC/DC Converter Features General Description • Pentium II Compatible • 5 bit DAC Controlled Output Voltage • Greater than 90% Efficiency • 4.5V to 12.6V Input Range • Dual NMOS Power FET Drivers • Fixed frequency, Current mode
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EL7571C
EL7571C
LXF16VB681M10X20LL
680uF
120pF
100pF
EL7571CM
PE-53681
680uF 35V capacitor equivalent
t3026
PE-53681
T-30-26
PE53681
diode L2
32CTQ030
BAV99
PE-53700
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arco 468
Abstract: sd1446 arco M113 arco 463
Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
SD1446
arco 468
arco
M113
arco 463
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MI4410
Abstract: WLS-2512 megamos 13 megamos IR32CTQ030 BAV99 EL7571 PE-53700 Si4410 VID-29
Text: EL7571 Data Sheet October 25, 2004 Programmable PWM Controller Features The EL7571 is a flexible, high efficiency, current mode, PWM step down controller. It incorporates five bit DAC adjustable output voltage control which conforms to the Intel Voltage
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EL7571
EL7571
MI4410
WLS-2512
megamos 13
megamos
IR32CTQ030
BAV99
PE-53700
Si4410
VID-29
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pcb diagram for 12v charge controller
Abstract: megamos MI4410 WLS-2512 32CTQ030 BAV99 EL7571C PE-53700 Si4410 51uH
Text: EL7571C EL7571C Programmable PWM Controller Features General Description • • • • • • The EL7571C is a flexible, high efficiency, current mode, PWM step down controller. It incorporates five bit DAC adjustable output voltage control which conforms to the Intel Voltage Regulation Module VRM
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EL7571C
EL7571C
pcb diagram for 12v charge controller
megamos
MI4410
WLS-2512
32CTQ030
BAV99
PE-53700
Si4410
51uH
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micrometals toroid core t30
Abstract: micrometals toroid core t300 micrometals toroid core t12 IC TL84 RF TOROIDS T44 UFH 073 T44A micrometals T37 T300D micrometals toroid core t68
Text: HOME TABLE OF CONTENTS Material Characteristics . 2 Design Aids . 3
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AT21400
Abstract: T3-06 Micrometals t306 T30-6
Text: Hi CRYSTAL FILTERS Discriminator Monolithic Crystal Filters These elements are monolithic dual mode resonators designed for use in quadrature phase detector type discriminator circuits for narrow-band frequency demodulation. Typical characteristics and circuit applications are shown
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2283C
2378C
2323C
AT21400
T3-06
Micrometals
t306
T30-6
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MRF464
Abstract: micrometals T37 toroid micrometals T37 High-Power NPN Silicon Power Transistor mobile rf power amplifier transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF464 NPN Silicon RF Power Transistor . . . designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • 80 W PEP , 30 MHz
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MRF464
MRF464
micrometals T37 toroid
micrometals T37
High-Power NPN Silicon Power Transistor
mobile rf power amplifier transistor
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Untitled
Abstract: No abstract text available
Text: S G S -1 H 0 M S 0 N I f f ll * ! S D 1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . • . . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION P o u t = 70 W MIN. WITH 10 dB GAIN PIN CONNECTION 4 /\ 1 3 \/ n/ DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
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SD1446
Abstract: arco 467
Text: f Z 7 SGS-THOMSON ^ 7 #. SD1446 K M ««® «! RF & MICROWAVE TRANSISTO RS HF/VHF APPLICATIONS • . ■ . ■ . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION p OUT = 70 W MIN. WITH 10 dB GAIN PIN CONNECTION 4/ \ DESCRIPTION 1 Q A
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SD1446
SD1446
arco 467
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SD1405
Abstract: No abstract text available
Text: S G S -T K O M S O N SD1405 \u RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • ■ . ■ ■ 30 MHz 12.5 VOLTS COMMON EMITTER IMD -3 2 dB GOLD METALLIZATION ■ P out = 75 W MIN. WITH 13 dB GAIN DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon
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SD1405
SD1405
GD7D42S
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T9431
Abstract: SD1405 T-943
Text: f Z 7 SGS-THOMSON SD1405 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS • . ■ ■ ■ . 30 MHz 12.5 VOLTS COMMON EMITTER IMD -3 2 dB GOLD METALLIZATION p OUT = 75 W MIN. WITH 13 dB GAIN PIN CONNECTION V\ 1 o f JO DESCRIPTION
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SD1405
SD1405
T9431
T-943
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SD1487
Abstract: No abstract text available
Text: / I T * 7 # . S G S -IH O M S O N « i i m i ê T i w SD1487 * ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • i ■ a . . 30 MHz 12.5 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION Pout = 100 W MIN. WITH 12.0 dB GAIN PIN CONNECTION 4 a 1 o f jO
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SD1487
SD1487
D070541
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Untitled
Abstract: No abstract text available
Text: fZ ^ 7 7 S G S -T H O M S O N SD1487 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • 30 MHz . 12.5 VO LTS ■ IMD -3 0 dB . C O M M O N EMITTER ■ G O LD M ETALLIZATION . P qut — 100 W MIN. WITH 12.0 dB GAIN PIN C O N N E C TIO N
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SD1487
SD1487
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