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    MICRO AMPLIFIER 471 Search Results

    MICRO AMPLIFIER 471 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation

    MICRO AMPLIFIER 471 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200 W CLASS D AUDIO AMPLIFIER

    Abstract: TDA8929T HSOP24 TDA8926 TDA8927 TDA8927J TDA8929 Audio Power Amplifiers application 9704 high Power audio amplifier btl class
    Text: Philips Semiconductors Delivering high power output and excellent efficiency, Class D audio amplifiers Philips Semiconductors’ Class D amplifier systems deliver much better audio performance than conventional AB audio amplifiers, making them ideal for multi-channel DVD and micro-sized audio


    Original     		PDF MSD616 200 W CLASS D AUDIO AMPLIFIER TDA8929T HSOP24 TDA8926 TDA8927 TDA8927J TDA8929 Audio Power Amplifiers application 9704 high Power audio amplifier btl class

    micro amplifier 471

    Abstract: philips 23 BFG425W BP317 hewlett packard application note 972 stripline pcb
    Text: APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT • Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series.


    Original     		PDF BFG425W BFG425W BFG400W 125006/01/pp8 micro amplifier 471 philips 23 BP317 hewlett packard application note 972 stripline pcb

    BFG480W

    Abstract: 0805CS BP317
    Text: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.


    Original     		PDF BFG480W BFG480W, BFG400W 125006/01/pp8 BFG480W 0805CS BP317

    MGS731

    Abstract: BFG480W MGS732 0805CS BP317
    Text: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.


    Original     		PDF BFG480W BFG480W, BFG400W 125006/01/pp8 MGS731 BFG480W MGS732 0805CS BP317

    BFG410W

    Abstract: Buffer Amplifier Ghz BFG400 BP317 application notes philips rf philips printed circuit board design
    Text: APPLICATION INFORMATION 2 GHz buffer amplifier with the BFG410W Philips Semiconductors Application information 2 GHz buffer amplifier with the BFG410W ABSTRACT • Description of the product The BFG410W, one of the Philips double polysilicon wideband transistors of the BFG400 series.


    Original     		PDF BFG410W BFG410W, BFG400 603508/01/pp8 BFG410W Buffer Amplifier Ghz BP317 application notes philips rf philips printed circuit board design

    BFG425W

    Abstract: BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes
    Text: APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook, full pagewidth C6 R1 R4 R3 C2 C3 +Vsupply C4 L2 L1 input 50 Ω C5


    Original     		PDF BFG425W MGS733 125006/01/pp8 BFG425W BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes

    High IP3 Low-Noise Amplifier

    Abstract: 0805CS BP317 micro amplifier 471 philips application notes bfg500 MGS730
    Text: APPLICATION INFORMATION 400 MHz low noise amplifier with the BFG540W/X Philips Semiconductors Application information 400 MHz low noise amplifier with the BFG540W/X ABSTRACT • Description of the product The BFG540W/X is one of the Philips silicon planar epitaxial wideband transistors of the BFG500 series.


    Original     		PDF BFG540W/X BFG540W/X BFG500 125006/01/pp8 High IP3 Low-Noise Amplifier 0805CS BP317 micro amplifier 471 philips application notes MGS730

    qualcomm msm 8660

    Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517
    Text:                 1      2        3         4       5    6      7 ! " 8      #  9 !   


    Original     		PDF RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517

    ind0603

    Abstract: ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8
    Text: Application Note 78 ML2722 & ML2751 Evaluation Design OVERVIEW FEATURES The ML2722/ML2751 evaluation design demonstrates the performance, simplicity and size of a transceiver for two application areas. First is a Direct Sequence Spread Spectrum DSSS at 1.536M chips per second and a


    Original     		PDF ML2722 ML2751 ML2722/ML2751 ML2722 ML2751 928MHzoration. AN78-01 ind0603 ROHM MCR03 EZP 22p capacitor murata grm39 capacitor Z5U .02M WIMA2220 220n capacitor datasheet 22p trimmer capacitor 821 ceramic capacitor NRS106K16R8

    Untitled

    Abstract: No abstract text available
    Text: NDA-210-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 17GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description


    Original     		PDF NDA-210-D 17GHz NDA-210-D

    RF TRANSISTOR up to 1000MHz 5db

    Abstract: RF2306 RF2308 schematic diagram DC POWER SUPPLY p13 transistor RF Transistor Selection
    Text: RF2308 4 GENERAL PURPOSE AMPLIFIER Typical Applications • General Purpose Broadband Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Portable Battery Powered Equipment • Driver Stage for Power Amplifiers • Broadband Test Equipment


    Original     		PDF RF2308 RF2308 4000MHz. RF2306 RF TRANSISTOR up to 1000MHz 5db RF2306 schematic diagram DC POWER SUPPLY p13 transistor RF Transistor Selection

    100ghz MMIC POWER AMPLIFIER hemt

    Abstract: InGaP HBT 478 NDA-210-D GaN Bias 25 watt
    Text: NDA-210-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 17GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description


    Original     		PDF NDA-210-D 17GHz NDA-210-D 100ghz MMIC POWER AMPLIFIER hemt InGaP HBT 478 GaN Bias 25 watt

    hitec servo hs 311

    Abstract: UPC63200 "Current to Voltage Converter" 4-20ma using LM358 AK5390 AD289 AD290A ak5545 SSM2016 LM347 14 PIN BB OPA2134
    Text: 2000 Burr-Brown Product Selection Guide Linear & Mixed Signal Products 2000 LI-545 Burr-Brown Corporation Printed in USA Burr-Brown Corporation Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706 Tel: 520 746-1111 • Twx: 910-952-1111 • Internet: http://www.burr-brown.com/


    Original     		PDF LI-545 hitec servo hs 311 UPC63200 "Current to Voltage Converter" 4-20ma using LM358 AK5390 AD289 AD290A ak5545 SSM2016 LM347 14 PIN BB OPA2134

    Untitled

    Abstract: No abstract text available
    Text: NDA-210-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 17GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers U F pg O


    Original     		PDF NDA-210-D 17GHz NDA-210-D ground-14

    Untitled

    Abstract: No abstract text available
    Text: NBB-502 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs LMDS/UNII/VSAT/WLAN/Cellular/DWDM • Linear and Saturated Amplifiers


    Original     		PDF NBB-502 NBB-502 10GHz 14GHz 15GHz 20GHz

    IN504

    Abstract: No abstract text available
    Text: RF2308                • General Purpose Broadband Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • Portable Battery Powered Equipment • Driver Stage for Power Amplifiers • Broadband Test Equipment


    Original     		PDF RF2308 RF2308 4000MHz. IN504

    Untitled

    Abstract: No abstract text available
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		PDF NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168)

    NBT-168

    Abstract: NBT-168-D NBT-168-T1 35 micro-X ceramic Package
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		PDF NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) NBT-168-D NBT-168-T1 35 micro-X ceramic Package

    Untitled

    Abstract: No abstract text available
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier 2.94 min 3.28 max Pin 1 Indicator E S Lid ID 1.70 min 1.91 max 2.39 min 2.59 max W N E GaAs HBT Si Bi-CMOS SiGe HBT


    Original     		PDF NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168)

    Solid State Micro Technology

    Abstract: ssm2013 Audio amplifier Circuit using TL082 voltage controlled amplifier cargo TL082 tl082 CIRCUIT DIAGRAM TL082 op amp TL082 PIN DIAGRAM
    Text: Solid State Micro Technology SSM 2013 for Music VOLTAGE CONTROLLED AMPLIFIER* DESCRIPTION The SSM 2013 is a low cost, high performance antilog voltage controlled amplifier with full class A performance. The device has a 94dB signal to notse figure at 0.01% THD The current inputs and outputs make possible wide bandwidth,


    OCR Scan     		PDF SSM2013 20Hz-20kHz) 800kHz 1N4148 2076B Solid State Micro Technology Audio amplifier Circuit using TL082 voltage controlled amplifier cargo TL082 tl082 CIRCUIT DIAGRAM TL082 op amp TL082 PIN DIAGRAM

    JRC 022

    Abstract: 022 JRC JRC022
    Text: RF2304 . -. MICRO-DEVICES GENERAL PURPOSE LOW-NOISE AMPLIFIER T y p ic a l A p p lic a tio n s • Receive or Transmit Low-Noise Amplifiers • Portable Battery Powered Equipment • FDD and TDD Communication Systems • Wireless LAN


    OCR Scan     		PDF RF2304 RF2304 300MHz JRC 022 022 JRC JRC022

    Untitled

    Abstract: No abstract text available
    Text: RFM Preliminary MICRO-DEVICES R F2 3 14 | GENERAL PURPOSE LOW NOISE AM PLIFIER T y p ic a l A p p lic a tio n s • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers • IF or RF Buffer Amplifiers


    OCR Scan     		PDF RF2314 RF2314

    Untitled

    Abstract: No abstract text available
    Text: RF* RF2322 Preliminary MICRO DEVICES 3 V GENERAL PURPOSE AM PLIFIER T y p ic a l A p p lic a tio n s • Broadband Gain Blocks • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • Oscillator Loop Amplifiers • IF or RF Buffer Amplifiers


    OCR Scan     		PDF RF2322 RF2322

    yg 2025

    Abstract: D-02227 ADVANCED MICRO SYSTEMS BE170 AM2925 AM2925A CD3024 ANS25 6p140 AM2925DC
    Text: ADVANCED MICRO DEVICES L4 D Ë j 0557555 □□55555 3 | ~ 0 2 5 7 5 2 5 ADVANCED MICRO DEVICES 81C 2 2 2 5 8 Am2925/Am2925A T -B o a 3 1/ D £ Clock Generator and Microcycle Length Controller > 3 DISTINCTIVE CHARACTERISTICS C rysta l c o n tro lle d o s c illa to r


    OCR Scan     		PDF Am2925/Am2925A Am2925 Am2925A AIS-RRD-20M-7/86-0 yg 2025 D-02227 ADVANCED MICRO SYSTEMS BE170 CD3024 ANS25 6p140 AM2925DC