Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110Lâ
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4110L
Abstract: ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110L
ATMEL 622
MH1RT QML
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
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tristate buffer
Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to
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4110F
tristate buffer
smd transistor AO
HEX TO DECIMAL
tristate buffer cmos
A101
A201
MH1099E
MH1156E
PO11F
MH1332E
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ATMEL 634
Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110G
ATMEL 634
ambit rev 4
C 828 dual
mcga
SRAM edac
A101
A201
MH1099E
MH1156E
MH1242E
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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20nts
4110H
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
AMI 1108
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110I
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
atmel 838
atmel edac
dsp radiation hard
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Transistor Equivalent list po55
Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to
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smd 472
Abstract: DSAE005560 5962-01B01 MH1RT QML TH1242S MG2044 MG2044E MG2091E MG2194E TH115
Text: Aerospace Product Line Preferred ASIC Packages for Aerospace Product Line July 2002 Aerospace Packaging July 2002 1 Aerospace Product Line ® Rules Composite arrays have to use pad frames of existing standard matrices from the relevant ASIC series. QML flows available only for the packages listed in the SMD’s,
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5962-00B02
Num32R
Q1/2003
5962-01B01
TH1M099S
TH1M156S
TH1M242S
TH1M332S
smd 472
DSAE005560
5962-01B01
MH1RT QML
TH1242S
MG2044
MG2044E
MG2091E
MG2194E
TH115
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110K
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
HEX TO DECIMAL
ATMEL 220
dsp radiation hard
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qml-38535
Abstract: smd code MH1
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outline Y. - phn 08-11-04 Thomas M. Hess B Removed “ground lid” note for case outline X in section 1.2.4 and in figure 1. phn 09-01-14 Charles F. Saffle REV SHEET REV SHEET REV A A A SHEET 15
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F7400
qml-38535
smd code MH1
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ta 8268
Abstract: qml-38535 4090 F 01B01 marking code 33916 MH1242ER smd code MH1
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 09 – 32 and appendix A. - phn 02-02-11 Thomas M. Hess B Add Case outline U and T. Editorial changes throughout. - phn 03-06-03 Thomas M. Hess C Change maximum supply voltage range from 3.6 V to 4.0 V and from 5.5 V to
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F7400
ta 8268
qml-38535
4090
F 01B01
marking code 33916
MH1242ER
smd code MH1
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DATE YR-MO-DA APPROVED A Add case outline Y. - phn DESCRIPTION 08-11-04 Thomas M. Hess B Removed “ground lid” note for case outline X in section 1.2.4 and in figure 1. phn 09-01-14 Charles F. Saffle C Add case outline Z. - phn 10-07-12
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F7400
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5962-01B01
Abstract: perfo 124 373 01B01 vhdl code 4794 qml-38535 3629 BP 4090 Datasheet ci 4009 5962-01B0115V9A 5962-01B0111V
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-02-11 Thoma M. Hess Add device type 09 – 32 and appendix A. - phn REV A SHEET 55 REV A A A A A A A A A A A A A A A A A A A A SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 REV A A
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F7400
5962-01B01
perfo 124 373
01B01
vhdl code 4794
qml-38535
3629 BP
4090
Datasheet ci 4009
5962-01B0115V9A
5962-01B0111V
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smd 5962-08b01
Abstract: F7400 5962-08B0101QXC 5962-08b0110vxc TH125 qml-38535 TH1M156ER TH133 5962-08b0110qxc 5962-08B0110VX
Text: REVISIONS LTR DATE YR-MO-DA APPROVED A Add case outline Y. - phn DESCRIPTION 08-11-04 Thomas M. Hess B Removed “ground lid” note for case outline X in section 1.2.4 and in figure 1. phn 09-01-14 Charles F. Saffle C Add case outline Z. - phn 10-07-12
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F7400
smd 5962-08b01
F7400
5962-08B0101QXC
5962-08b0110vxc
TH125
qml-38535
TH1M156ER
TH133
5962-08b0110qxc
5962-08B0110VX
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atmel 946
Abstract: atmel 946 8 pin MH1RT QML military mcm 1553 0.6 um cmos process atmel 27 Series
Text: 200 ASICs for Aerospace i n t e g r a t i o n s o l u t i o n s System Level Integration for the space market R aerospace S y s t e m Meeting communication satellite challenges tmel Wireless & Microcontollers A the way for System Level Integration. hardened VLSI products for space
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perf89
32-bit
atmel 946
atmel 946 8 pin
MH1RT QML
military mcm 1553
0.6 um cmos process
atmel 27 Series
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Untitled
Abstract: No abstract text available
Text: M65609E 128 K 8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or
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M65609E
M65609E
65609E
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65609E
Abstract: M65609E
Text: M65609E 128 K 8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M65609E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel Wireless & Microcontrollers brings the solution to applications where fast computing is as mandatory as
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M65609E
M65609E
65609E
65609E
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SMDJ-65609EV-40SV
Abstract: M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E MMDJ-65609EV-40MQ
Text: Features • Operating voltage: 3.3V • Access time: 40ns • Very low power consumption • • • • • • • • – active: 180mW Max – standby: 70µW (Typ) Wide temperature Range: -55°C to +125°C 400 Mils width package TTL compatible inputs and outputs
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180mW
200Krads
M65609E
SMDJ-65609EV-40SV
MMDJ-65609EV-40
MMDJ-65609EV-40-E
MMDJ-65609EV-40MQ
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TM1014
Abstract: TM1015 TM2020 escc TM2001 20600 TM2010 ATC18RHA TM1008 TM1010
Text: 1. Introduction Design and manufacturing facilities meet international quality standards. For Space, Avionic and Military Projects, production screenings and qualification are compliant either with ESCC 9000 or MIL-PRF-38535. Atmel is fully DSCC QML qualified for level Q military and V (space), effective
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MIL-PRF-38535.
ATC18RHA
4288D
TM1014
TM1015
TM2020
escc
TM2001
20600
TM2010
TM1008
TM1010
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AT7910E
Abstract: SpaceWire AT7910
Text: AT7910E SpW-10X SpaceWire Router DATASHEET Features SpaceWire Router Logical to Physical addressing translation Priority Management Header Deletion Capability Eight Bidirectional SpaceWire links Full duplex communication Data rate from 2 up to 200 Mbit/s in each direction
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AT7910E
SpW-10X
AT7910E
SpaceWire
AT7910
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Untitled
Abstract: No abstract text available
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791Câ
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5962-0250101QXC
Abstract: 5962-0250101VXC M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E TM1019
Text: Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • • – Active: 180 mW Max – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package TTL Compatible Inputs and Outputs
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TM1019
M65609E
M65609appear
4158E
5962-0250101QXC
5962-0250101VXC
MMDJ-65609EV-40
MMDJ-65609EV-40-E
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Atmel 544
Abstract: atmel 504 atmel 404 MQFPT352 MLGA625 725m 5962-06B02 atmel h 404 MH1242E 404D
Text: Features • • • • • • • • • • • • • • • • • Comprehensive Library of Standard Logic and I/O Cells Up to 6.5 usable Mgates equivalent NAND2 Operating voltage 1.8V for core and 3.3V or 2.5V for I/O’s Memory Cells Compiled or synthesized to the Requirements of the Design
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655Mbps)
4261G
Atmel 544
atmel 504
atmel 404
MQFPT352
MLGA625
725m
5962-06B02
atmel h 404
MH1242E
404D
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TM2001
Abstract: TM1010 TM2020 TM1014 TM101 4288C TM1008 TM2010 ATC18RHA TM2018
Text: 1. Introduction Atmel facilities are certified according to the ISO9001 and ISO/TS 16949 international quality standards. ISO9001/ ISO/TS 16949 standards covers quality system from the design development of product through manufacturing and service. For Space, Avionic and Military Projects, production screenings and qualification are
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ISO9001
ISO9001/
MIL-PRF-38535.
4288C
TM2001
TM1010
TM2020
TM1014
TM101
TM1008
TM2010
ATC18RHA
TM2018
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