Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MGFK35V2732 Search Results

    SF Impression Pixel

    MGFK35V2732 Price and Stock

    Mitsubishi Electric MGFK35V2732

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGFK35V2732 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    MGFK35V2732 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFK35V2732 Mitsubishi 12.7-13.2 GHz BAND 3W Internally Matched GaAs FET Scan PDF
    MGFK35V2732 Unknown FET Data Book Scan PDF

    MGFK35V2732 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V2732 12.7— 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The MG FK35V2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan
    PDF MGFK35V2732 FK35V2732

    FK35V

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK35V2732 1 2 . 7 - 13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK35V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan
    PDF MGFK35V2732 FK35V

    MGFK30M4045

    Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045
    Text: - 156 - M € *± € m 1* & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228


    OCR Scan
    PDF MGFK30M4045 MGFK33M4045 MGFK35M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 MGFK37V4Ã MGFX38V0005 MGFX38V0510 MGFX38V1722 mgfx35v0510 MP6704 MGFX35V0005 M-Typ

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


    OCR Scan
    PDF

    MGFK35V2732-01

    Abstract: MGFK35V2732-51 MGFK35VXXXX FK35V
    Text: ^M ITSUBISHI MGFK35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFK35VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P1dB = 3.5 (TYP)


    OCR Scan
    PDF MGFK35VXXXX MGFK35VXXXX MGFK35V2228 MGFK35V2228-01 MGFK35V2228-51 MGFK35V2732-01 MGFK35V2732-51 MGFK35V4045-01 FK35V4045-51 MGFK35V2732-51 FK35V