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    MG30G6EL9 Search Results

    MG30G6EL9 Datasheets (2)

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    MG30G6EL9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
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    Untitled

    Abstract: No abstract text available
    Text: — aSSSfwus o,FFusEpTYPE— MG30G6EL9 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hpE=100 Min. (Ic=30A)


    OCR Scan     		PDF MG30G6EL9

    Untitled

    Abstract: No abstract text available
    Text: MG30G6EL9 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH P OWER S W I T C H I N G APPLICATIONS. M O T O R C O N T R O L A P P L ICATIONS. . The Collector Is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Jain


    OCR Scan     		PDF MG30G6EL9

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1