GaAs tunnel diode
Abstract: Germanium Schottky diode tunnel diode GaAs SMGS11 germanium diode germanium diodes Microwave detector diodes SMS202
Text: FOR IMMEDIATE RELEASE: January 11, 2010 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 [email protected] Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 [email protected] PLASTIC SMT SCHOTTKY MIXER/DETECTOR DIODES
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Abstract: No abstract text available
Text: MSS39,000 Series P-Type Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40
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MSS39
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018pF
Abstract: B10B Microwave detector diodes MSS39 mss39,152-h20 Aeroflex mss39 CA P86
Text: MSS39,000 Series P-Type Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40
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MSS39
018pF
B10B
Microwave detector diodes
mss39,152-h20
Aeroflex mss39
CA P86
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A17025
Abstract: MSS39 K 2642
Text: MSS39,000 Series P-Type Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40
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MSS39
A17025
A17025
K 2642
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Abstract: No abstract text available
Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.
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MSS20
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Metelics MSS20-141
Abstract: MSS20 C15 9 pin mss20.143 142-B10D
Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.
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MSS20
046-C15
047-C15
A17027
Metelics MSS20-141
C15 9 pin
mss20.143
142-B10D
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MSS20.143-B10D
Abstract: mss20 b10d 050c1 MSS20, 143-B10D MSS-20 mss20,140 mss20,146 mss20.140 mss20.050
Text: MSS20,000 Series Zero Bias Schottky Diodes Description Features The Aeroflex / Metelics MSS20,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave zero-bias detector applications up to 40 GHz.
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MSS20
MSS20.143-B10D
b10d
050c1
MSS20, 143-B10D
MSS-20
mss20,140
mss20,146
mss20.140
mss20.050
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SMS201
Abstract: AEROFLEX SMS-201 A 0503 METELICS DETECTOR DIODE
Text: SMS201 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS201 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and
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SMS201
SMS201
A17104
AEROFLEX
SMS-201
A 0503
METELICS DETECTOR DIODE
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Untitled
Abstract: No abstract text available
Text: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and
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SMS202
SMS202
A17105
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MZB600
Abstract: No abstract text available
Text: Zero Bias Detector Diode MZB600 Features • Very Low Forward Voltage: 300 mV maximum @ 1 mA • Low Tangential Signal Sensitivity: -42 dBm typical • Low Junction Capacitance: CJ = 0.2 pF typical • High breakdown voltage: 3 V minimum • Available in Beam Lead, Multijunction Chip or Packaged
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MZB600
CS19-6
MZB600
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MZB600-19-6-W
Abstract: MZB600 MZB600-19-6-R
Text: Zero Bias Detector Diode MZB600 Features • Very Low Forward Voltage: 300 mV maximum @ 1 mA • Low Tangential Signal Sensitivity: -42 dBm typical • Low Junction Capacitance: CJ = 0.2 pF typical • High breakdown voltage: 3 V minimum • Available in Beam Lead, Multijunction Chip or Packaged
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MZB600
CS19-6
MZB600-19-6-W
MZB600-19-6-R
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MZB600
Abstract: No abstract text available
Text: Zero Bias Detector Diode MZB600 Features • Very Low Forward Voltage: 300 mV maximum @ 1 mA • Low Tangential Signal Sensitivity: -42 dBm typical • Low Junction Capacitance: CJ = 0.2 pF typical • High breakdown voltage: 3 V minimum • Available in Beam Lead, Multijunction Chip or Packaged
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MZB600
CS19-6
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MSPD2018
Abstract: MSPD1012-E50 MSPD2018-E50 MSPD-1012-E50 MSPD1012E50 sampling phase detector SPD MSPD1000 Sampling Phase Detectors impulse generator microwave Sampling Phase Detector
Text: Sampling Phase Detector Modules MSPD1000, MSPD1002, MSPD1012 & MSPD2018 Features E50 & E50SM Description The Sampling Phase Detector (SPD) module is a hybrid circuit providing a fast Step Recovery Diode, coupling capacitors and a low barrier Schottky pair.
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MSPD1000,
MSPD1002,
MSPD1012
MSPD2018
E50SM)
A17135
MSPD2018
MSPD1012-E50
MSPD2018-E50
MSPD-1012-E50
MSPD1012E50
sampling phase detector SPD
MSPD1000
Sampling Phase Detectors
impulse generator microwave
Sampling Phase Detector
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J-STD-20C
Abstract: METELICS DETECTOR DIODE J-STD-20-C A 0503 SMS-202
Text: SMS202 Silicon Schottky Diodes 1 1 PIN FUNCTION 1 ANODE 2 CATHODE 2 2 0503 Molded Plastic DFN Package Description Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and
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SMS202
SMS202
A17105
J-STD-20C
METELICS DETECTOR DIODE
J-STD-20-C
A 0503
SMS-202
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148-E20
Abstract: MSS39 148-H20 bd513
Text: B5E D METELICS CORP bD513S2 OOOOlbM MSS-39,000 SERIES P-TYPE SCHOTTKY DETECTOR DIODES 1 T * 0 -7 - 0 7 metelics CORPORATION FEATURES • • • • • • Low Rs Extremely Low l/f Noise LowTSS Strong Beam Leads Tight Batch Matching Available Hi-Rel Available MIL-S-19500, MIL-STD-750
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bD513S2
MSS-39
MIL-S-19500,
MIL-STD-750)
148-E20
MSS39
148-H20
bd513
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Untitled
Abstract: No abstract text available
Text: METELICS 25E CORP bOS135S D 0000172 SAMPLING PHASE DETECTOR Ô 0 7 -0 1 * metelics CORPORATION FEATURES • • • • Phase Locking to 22 GHz Broadband Capability Fully Integrated Module Phase Locks DRO’s and VCO’s MAXIMUM RATINGS Storage Temperature. -6 5to+ 150°C
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bOS135S
MSPD-1000-E50
MSPD-1002-E50
MSPD-1012-E50
MSPD-1020-E50
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metelics FSCM 59365
Abstract: MSS39 MSS-39045-C15 FSCM 59365
Text: M ETELICS CORP HE T-Û7-07 D§ tiQSlBSa OODQDTS 5 | M SS-39,000 Series Detector P-Type Schottky D iodes metelics CORPORATION Features Applications • Low Rs • Biased detector • Extremely low l/f noise • Unbiased power monitor > — 15 dBm • Lower TSS
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MIL-S-19500,
MIL-STD-750)
SS-39
MSS-39
041-C
041-P55
041-P86
metelics FSCM 59365
MSS39
MSS-39045-C15
FSCM 59365
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Untitled
Abstract: No abstract text available
Text: IDE metelics SURFACE MOUNT SOT23 AND SOD323 SCHOTTKY MIXERS AND DETECTOR DIODES CORPORATION FEATURES Surface Mount Package Tape and Reel Available Reliability Gold Metallized Chip Silicon Nitride/Oxide Passivation Low Series Resistance Low Capacitance Wide Dynamic Range
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OD323
OD323
b051352
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MSPD1020E50
Abstract: sampling phase detector SPD MSPD-1020-E50 MSPD1012-E50 MSPD1020-E50 sampling mixer MSPD-1012-E50 mspd1012 ,"diode srd" MSPD1012E50
Text: THE SAMPLING PHASE DETECTOR metelics C O R P O R ATIO N The Sampling Phase Detector SPD is composed of a comb generator, a coupling network and a single balanced mixer. It is designed to be used in phase locking circuits for microwave oscillators. The following description of the operation of the SPD refers
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MSPD-1020
100MHz
19dBm
23dBm
21dBm
MSPD1020E50
sampling phase detector SPD
MSPD-1020-E50
MSPD1012-E50
MSPD1020-E50
sampling mixer
MSPD-1012-E50
mspd1012
,"diode srd"
MSPD1012E50
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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ZO diode
Abstract: SOT230 SMSD3004
Text: TflEj metelics SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES * CORPORATION FEATURES Surface Mount Package Tape a n d Reel A vailable Reliability G old M etallized Chip Silicon N itride/O xide Passivation Low Series Resistance
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OD323
ZO diode
SOT230
SMSD3004
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SMSD3012
Abstract: No abstract text available
Text: SURFACE M O U N T SOT23 A N D S O D 323 SCHOTTKY MIXERS A N D DETECTOR DIODES metelics CORPORATION MAXIMUM RATINGS PACKAGE CHARACTERISTICS Operating/Storage Temperature R a n g e -65°C to +150°C Max Power Dissipation per P a c k a g e .250mW
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250mW
SMST3012
SMST4012
SMST6012
SMST3004
SMST4004
SMST6004
SMSD3012
SMSD4012
SMSD6012
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MPND-4005
Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
Text: MTLXS00066 metelics SCHOTTKY FOR MIXER, DOUBLER OR BIASED DETECTOR • ojsmoi4i ' ojeioooq PART NUMBER MSS-30, MSS-40, MSS-50, MSS-60, 142 141 146 144 TYPE VF @ 1 mA mV MAX. RD @ 5 mA SINGLE SINGLE SINGLE SINGLE 230 TO 350 335 TO 505 415 TO 625 580 TO 675
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MTLXS00066
MSS-30,
MSS-40,
MSS-50,
MSS-60,
PCR46
MPND-4005
MPND4005
MCE Metelics
MBP-1030
metelics anti-parallel
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MBD3057-C18
Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth
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