FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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FPD2250SOT89CE
FPD2250SOT8
FPD2250SOT89CE:
31dBm
44dBm
FPD2250SOT89CE
25mx1500m
EB2250SOT89CE-BC
FPD2250SOT89CECE
FPD1500SOT89
FPD2250SOT89
MIL-HDBK-263
FPD2250SOT
FPD2250
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FPD1500SOT89
Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency
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FPD2250SOT89
FPD2250SOT8
FPD2250SOT89E:
31dBm
44dBm
FPD2250SOT89
25mx1500m
FPD2250SOT89E
EB2250SOT89CE
EB2250SOT89CE-BC
FPD1500SOT89
FPD2250SOT89E
TRANSISTOR SSG 111
oint 4410
HBT transistor s parameters measures
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AN1032
Abstract: NES2427P-140 transistor a 1837
Text: PRELIMINARY DATA SHEET 140 W S-BAND TWIN POWER GaAs MESFET NES2427P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 9.5 dB TYP HIGH EFFICIENCY: 41% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.
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NES2427P-140
NES2427P-140
24-Hour
AN1032
transistor a 1837
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R AM142540MM-FM-R December 2008 Rev 7 DESCRIPTION AMCOM’s AM142540MM-BM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.
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AM142540MM-BM-R
AM142540MM-FM-R
AM142540MM-BM-R
400MHz
40dBm)
37dBm
AM142540MM-BM/FM-R
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Untitled
Abstract: No abstract text available
Text: AM142540MM-BM-R AM142540MM-FM-R Aug 2010 Rev 8 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM142540MM-BM/FM-R is part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs MESFET MMIC power amplifier biased at 14V. The input and inter-stage matching networks cover 1.4 to 2.5GHz.
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AM142540MM-BM-R
AM142540MM-FM-R
AM142540MM-BM/FM-R
400MHz
40dBm)
AM142540MM-BM/FM-R
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2450 MHz low noise amplifier schematic
Abstract: C06CF Avantek mixer HP83620A Avantek mixer TFX Avantek tfx Rf Front-End TFX-722 GRM36X5R104K10 2.4GHz booster
Text: 3.3V Integrated RF Front-End for 2.4GHz ISM ITT2304GF PRELIMINARY FEATURES • • • • • • • • • Build a Bluetooth or HomeRF radio by connecting directly to popular single chip transceivers like the National LMX3162. 3.3V operation Single positive supply
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ITT2304GF
LMX3162.
ITT2304GF
HP83620A
ACM-040-2222
902045x7
TFX-722
2450 MHz low noise amplifier schematic
C06CF
Avantek mixer
Avantek mixer TFX
Avantek tfx
Rf Front-End
TFX-722
GRM36X5R104K10
2.4GHz booster
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RF6505
Abstract: QFN-20 RF6505 DATASHEET MESFET 2.4GHz BiCMOS micro rf 2.4ghz LNA 2.4GHZ bluetooth
Text: RF6505 Proposed 3.3V, 2.4GHz FRONT-END MODULE GND BALUN ANT1 VCC GND N/C TX_EN PDET ANT2_EN GND RFP ZigBee 802.15.4 Based Systems for Remote Monitoring and Control WLAN 802.11b/g ANT1_EN ANT2 Applications VCCLNA RFN VCC GND VCC TX P1dB: 27dBm
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RF6505
27dBm
20-Pin,
11b/g
RF6505
DS091106
QFN-20 RF6505 DATASHEET
MESFET 2.4GHz
BiCMOS
micro rf 2.4ghz
LNA 2.4GHZ bluetooth
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Untitled
Abstract: No abstract text available
Text: RF5125 Proposed 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems • Commercial and Consumer Systems
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RF5125
IEEE802
11b/g/n
RF5125
2400MHz
2500MHz
18dBm,
130mA
RF5125PCBA-41XFully
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Untitled
Abstract: No abstract text available
Text: RF5755 Proposed 3.3V, 2.4GHz 802.11b/g/n WLAN FRONT-END MODULE Features C_RX N/C BT 13 LNA VDD 1 Integrated 2.5GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b
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RF5755
11b/g/n
20dBm,
23dBm
IEEE802
16-pin,
RF5755
DS091207
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Untitled
Abstract: No abstract text available
Text: RFFM3482Q Proposed 2.4GHz TO 2.5GHz, AUTOMOTIVE WiFi FRONT END MODULE RXBP GND ANT 13 12 BTH SW GND 2 BT 11 RX SW 3 10 TX SW PAEN 4 9 7 VB 8 PDET 6 PABC 5 VB Single Voltage Supply 3.3V to 4.2V Integrated 2.5GHz b/g/n Amplifier, RX Balun and TX/RX Switch and Directional
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RFFM3482Q
17dBm,
16-pin,
RFFM3842Q
DS120713
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rf transistor 2.5GHz
Abstract: RF5125 micro rf 2.4ghz
Text: RF5125 Proposed 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems • Commercial and Consumer Systems
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RF5125
IEEE802
11b/g/n
RF5125
2400MHz
2500MHz
18dBm,
105mA
RF5125PCBA-41XFully
rf transistor 2.5GHz
micro rf 2.4ghz
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2.4GHz Power Amplifier module
Abstract: 2.4GHz Power detector RF5375 2.4GHz amplifier layout BJT amplifier 2.4GHZ front-end
Text: RF53753.3 V, 2.4GHz 802.11b/g/n WLAN FrontEnd Module RF5375 Proposed 3.3V, 2.4GHZ 802.11b/g/n WLAN FRONTEND MODULE PA_En Single Supply Voltage 3.0V to 4.8V Output Power: 11b=21dBm Meeting Spectral Mask 11n=18dBm at <3% EVM RX_Out PDet 9 2 8 3 7
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RF53753
11b/g/n
RF5375
11b/g/n
21dBm
18dBm
IEEE802
12-Pin,
RF5375
2.4GHz Power Amplifier module
2.4GHz Power detector
2.4GHz amplifier layout
BJT amplifier 2.4GHZ
front-end
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Untitled
Abstract: No abstract text available
Text: RF5122 Preliminary 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems
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RF5122
IEEE802
11b/g/n
RF5122
2400MHz
2500MHz
18dBm
115mA
RF5122PCBA-41X
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Untitled
Abstract: No abstract text available
Text: RF5263 Preliminary 3.3V TO 5.0V, 2.5GHz LINEAR POWER AMPLIFIER Pb-Free Product Typical Applications • 802.11b/g/n Access Points • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery-Powered Equipment • 2.4GHz ISM Band Applications
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RF5263
11b/g/n
RF5263
11g/n
16-pin,
2400MHz
2500MHz
RF5263PCBA-41X
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Untitled
Abstract: No abstract text available
Text: RF6535 Proposed 3.3V, 2.4GHz FRONT-END MODULE Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm Applications ZigBee 802.15.4 Based Systems for Remote Monitoring and Control WLAN 802.11b/g VCC_BAIS VCC NC 13 12 11 TXN 16 10 VCC TXP 17 9 GND RXCT 18 8
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RF6535
20-Pin,
22dBm
11b/g
RF6535
DS091026
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Untitled
Abstract: No abstract text available
Text: RF6515 Proposed 3.3V, 2.4GHz FRONT-END MODULE Applications ZigBee 802.15.4 WLAN 802.11b/g VCC VCC NC 14 13 12 11 TXN 16 10 VCC TXP 17 9 GND RXCT 18 8 ANT RXBN 19 7 GND RXBP 20 6 GND ANT NC 2 NC 1 3 4 5 NC 15 PAEN TX Output Power: 22dBm TX Gain: 28dB
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RF6515
22dBm
20-Pin,
11b/g
RF6515
DS091103
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Untitled
Abstract: No abstract text available
Text: RFFM8202 Proposed 2.4GHz TO 2.5GHz WiFi FRONT END MODULE Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm ANT NC C_RX C_BT 16 15 14 13 12 NC PDET 1 Features POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask
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RFFM8202
16-pin,
19dBm
21dBm
DS120326
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Untitled
Abstract: No abstract text available
Text: RF2860 Preliminary PCS CDMA LOW NOISE AMPLIFIER/MIXER BROADBAND DOWNCONVERTER Typical Applications • CDMA Korean PCS Systems • GPS Applications • CDMA US PCS Systems • General Purpose Downconverter • IMT-2000 and 2.4GHz Band Applications • Commercial and Consumer Systems
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RF2860
IMT-2000
RF2860
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Untitled
Abstract: No abstract text available
Text: RFFM4203 3.0V TO 5.0V, 2.4GHz TO 2.5GHz 802.11b/g/n WiFi FRONT END MODULE N/C 2 11 BT VCC 3 10 Vdd VCC 4 9 LNA_EN Applications IEEE802.11b/g/n WiFi Applications 2.4GHz to 2.5GHz ISM Band Solutions Portable Battery-Powered Equipment WiFi Access Points, Gateways,
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RFFM4203
11b/g/n
IEEE802
19dBm,
DS120406
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RFFM8200
Abstract: RFFM8200TR7 RFFM8200PCK-410 RFFM8200SR
Text: RFFM8200 Preliminary 3.3V, 2.4GHz 802.11b/g/n WiFi FRONT END MODULE N/C 2 11 BT VCC 3 10 Vdd VCC 4 9 LNA_EN Applications IEEE802.11b/g/n WiFi 2.5GHz ISM Band Solutions Portable Battery-Powered Equipment C_BT GND 5 6 7 8 RX 12 N/C Integrated 2.5GHz b/g/n
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RFFM8200
11b/g/n
16-pin,
20dBm,
23dBm
IEEE802
RFFM8200
RFFM200
DS111
RFFM8200TR7
RFFM8200PCK-410
RFFM8200SR
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RFFM8202
Abstract: QFN-16 2.5mm x 2.5mm DS1203 Tablets DIAGRAM WiFi block diagram
Text: RFFM8202 Proposed 2.4GHz TO 2.5GHz WiFi FRONT END MODULE Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask Small Size High Performance FEM Excellent Linearity Input and Output Matched to
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RFFM8202
16-pin,
19dBm
21dBm
50High
DS120326
RFFM8202
QFN-16 2.5mm x 2.5mm
DS1203
Tablets DIAGRAM
WiFi block diagram
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Untitled
Abstract: No abstract text available
Text: RF5125 Proposed 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11b/g/n WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems • Commercial and Consumer Systems
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RF5125
IEEE802
11b/g/n
RF5125
2400MHz
2500MHz
18dBm,
130mA
RF5125PCBA-41XFully
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rf transistor 2.5GHz
Abstract: RF5622 RF5622PCBA-41X 2.4GHz Power Amplifier transistor Bluetooth detector circuit TRANSISTOR 2.4GHZ 6VC2
Text: RF5622 Preliminary 3.0V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2x2x0.45mm 8 7 Features RF IN 1 6 VC2 Input Match 2Fo Filter VREG 2 Bias Circuit 3 Applications
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RF5622
IEEE802
11b/g/n
18dBm
RF5622
DS071011
rf transistor 2.5GHz
RF5622PCBA-41X
2.4GHz Power Amplifier transistor
Bluetooth detector circuit
TRANSISTOR 2.4GHZ
6VC2
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IN 5406
Abstract: F24G 1S121 M 16100 39 2 1019
Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.
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OCR Scan
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HWC27NC
HWC30NC
HWC34NC
chip67
IN 5406
F24G
1S121
M 16100 39 2 1019
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