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    MEDIUM POWER BIPOLAR TRANSISTORS Search Results

    MEDIUM POWER BIPOLAR TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    MEDIUM POWER BIPOLAR TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		PDF MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335

    Medium Power Bipolar Transistors

    Abstract: 2N5320 2N5322
    Text: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.


    Original     		PDF 2N5320, 2N5322 Medium Power Bipolar Transistors 2N5320

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    BCP55-16, BCX55-16

    Abstract: bcp55 to PXTA14 PBSS4350Z/3 BCP53-16, BCX53-16 BSP19 PBHV9040Z PBSS305PD PBSS305PX PBSS306PX
    Text: Medium power bipolar transistors Maximum flexibility with NXP’s transistor portfolio Our extensive portfolio of small-signal bipolar transistors covers a wide range of functionalities - from Darlington and switching devices right up to the latest developments


    Original     		PDF BSR31 BSP32 BCP53-10 BCP53 BCX53 BCP53-16 BCX53-16 BSP33 BSR33 BCX53-10 BCP55-16, BCX55-16 bcp55 to PXTA14 PBSS4350Z/3 BCP53-16, BCX53-16 BSP19 PBHV9040Z PBSS305PD PBSS305PX PBSS306PX

    ST AN2349 PFC

    Abstract: N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode
    Text: AN2349 Application note Simple cost-effective PFC using Bipolar Transistors for low-to-medium power HF Ballasts Introduction This note deals with the implementation of a Power Factor Correction PFC in a Discontinuous-mode Boost Converter where a PFC stage is achieved with a power bipolar


    Original     		PDF AN2349 ST AN2349 PFC N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode

    bipolar junction transistor

    Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
    Text: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product


    Original     		PDF OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a

    PC2709T

    Abstract: NEC 2710
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2776T 5 V -BIAS SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION µPC2776T is a silicon monolithic integrated circuit designed as wideband, medium output amplifier. This IC


    Original     		PDF PC2776T PC2776T PC2709T PC2708T/2709T/2710T. NEC 2710

    NE46134-T1

    Abstract: No abstract text available
    Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high


    Original     		PDF NE46100 NE46134 NE46134 NE461 NE46100, OT-89) NE46134-T1

    2n4401 smd

    Abstract: 2N4401 smd 2n4401
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N4401 product family TO-92 Plastic-Encapsulate Biploar Transistors


    Original     		PDF 2N4401 600mW 250MHz 100kHz) 30Vdc, 150mAdc, 15mAdc) 150mAdc 2n4401 smd 2N4401 smd 2n4401

    2N4403

    Abstract: No abstract text available
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N4403 product family TO-92 Plastic-Encapsulate Biploar Transistors


    Original     		PDF 2N4403 600mW 200MHz -150mAdc, -15mAdc) -150mAdc 2N4403

    30VDC

    Abstract: 2N3904
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number 2N3904 product family TO-92 Plastic-Encapsulate Biploar Transistors


    Original     		PDF 2N3904 200mA 600mW 300MHz 10mAdc, 10mAdc 30VDC 2N3904

    pn2222a smd

    Abstract: PN2222A npn 60V 600mw
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number PN2222A product family TO-92 Plastic-Encapsulate Biploar Transistors


    Original     		PDF PN2222A 600mW 300MHz 30Vdc, 150mAdc, 15mAdc) 150mAdc pn2222a smd PN2222A npn 60V 600mw

    MPS2907A

    Abstract: PN2907A
    Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Medium Power Bipolar Transistors > Part Number PN2907A product family TO-92 Plastic-Encapsulate Biploar Transistors


    Original     		PDF PN2907A 600mW 100nA 200MHz 150mAdc, 15mAdc) 150mAdc MPS2907A PN2907A

    BPT0338

    Abstract: No abstract text available
    Text: BIPOLARICS, INC. Part Number BPT0338 NPN SILICON MICROWAVE POWER TRANSISTORS PRODUCT DATA SHEE FEATURES: • DESCRIPTION AND APPLICATIONS: Command Base • Bipolarics' BPT0338 is high performance silicon bipolar transistors intended for medium and high power applications.


    Original     		PDF BPT0338 BPT0338

    Untitled

    Abstract: No abstract text available
    Text: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS


    Original     		PDF BD237G BD234G BD238G DB237G, BD238G BD237/D

    MARKING 93 SOT89

    Abstract: marking 93 sot-89 marking 93, sot-89 transistor marking 551 sot-89 marking 3A sot-89 marking codes transistors a1 sot-89 MARKING 5A SOT-89 SOT-89 Marking 93 2STN1550 P025H
    Text: 2STF1550 2STN1550 Low voltage fast-switching NPN power bipolar transistors Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power


    Original     		PDF 2STF1550 2STN1550 OT-89 OT-223 2002/93/EC OT-89 OT-223 2STF1550 2STN1550 MARKING 93 SOT89 marking 93 sot-89 marking 93, sot-89 transistor marking 551 sot-89 marking 3A sot-89 marking codes transistors a1 sot-89 MARKING 5A SOT-89 SOT-89 Marking 93 P025H

    Untitled

    Abstract: No abstract text available
    Text: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS


    Original     		PDF BD237G BD234G, BD238G BD234G DB237G, BD237/D

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1678GV 5 V-BIAS SILICON MMIC AMPLIFIER 2.0 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION /¿PC1678GV is a silicon monolithic integrated circuit designed as medium output power amplifier for various ultra


    OCR Scan     		PDF //PC1678GV PC1678GV PC1678G. VP15-00-3 WS60-00-1 C10535E)

    bc557

    Abstract: BDX472 BDX452
    Text: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics


    OCR Scan     		PDF BC160 BC161 BC177 BC327 BC328 BC369 BC556 BC557 BC558 BC636 BDX472 BDX452

    LA402

    Abstract: UC1678
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1678GV 5 V-BIAS SILICON MMIC AMPLIFIER 2.0 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER D ES C R IP TIO N //PC1678GV is a silicon monolithic integrated circuit designed as medium output power amplifier for various ultra


    OCR Scan     		PDF uPC1678GV //PC1678G. LA402 UC1678

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating


    OCR Scan     		PDF MJEC340 3kA/10kA/10kA

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION ¿¡PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.


    OCR Scan     		PDF UPC2776T PC2776T PC2709T PC2708T/2709T/2710T. VP15-00-3 WS60-00-1 10535EJ7V0IF00)