ixys mcc
Abstract: M*M PRODUCTS ixys mdd D-68623
Text: Product Change Notice PCN No.: 02/05 Customer: all IXYS product type: Package: Y4 (34 mm) Products for mains rectification: MCC*, MCD* & MDD* Description of change: 6 parts per packing unit instead of 5 parts Size of packing unit will change from 235x105x38 mm³ to 250x100x35 mm³.
|
Original
|
PDF
|
235x105x38
250x100x35
D-68623
14F12
ixys mcc
M*M PRODUCTS
ixys mdd
|
IXYS DATE CODE
Abstract: ixys mco 2 IXYs MCO ixys mcc
Text: Product Information Purpose of this form is to document that our customers noticed shipments of parts deviating from specified values. Part number: Y1 Modules like MCC, MCD, MDD 312, 255, 254, 175 and MCO, MDO 450, 500, 600 Customer: Company Attn. Of Fax:
|
Original
|
PDF
|
|
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
|
Original
|
PDF
|
AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
|
MCD501
Abstract: MCD501-16io1 MDC501 MDC 1200 mcd501-12io1 501-18io1 MDC501-16io1 MCD501-18io1 mdk diode MCD501-16
Text: EXPANDED PRODUCT BRIEF Thyristor / Diode Modules Available in 8 configurations - Voltage grades 1200V-2600V Features and Benefits May 2009 Issue 3 • New bus bar design retaining standard connection footprint • Electrically isolated base plate Configurations
|
Original
|
PDF
|
200V-2600V
431-22io1
431-24io1
501-12io1
501-16io1
501-18io1
MCD501
MCD501-16io1
MDC501
MDC 1200
mcd501-12io1
501-18io1
MDC501-16io1
MCD501-18io1
mdk diode
MCD501-16
|
ixys MDD 172 12
Abstract: motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16
Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings
|
Original
|
PDF
|
600-20io1
600-22io1
MCC19
ixys MDD 172 12
motor IG 2200 19
IXYs MCO
ixys mco 255
MCC132
MCC161
MCC162
MCC170
MCC72
MCC16
|
MCC255
Abstract: motor IG 2200 19 THYRISTOR MODULE IXYS MCC 310 MCC95 MCC132 MCC161 MCC162 MCC170 MCC72 MCC94
Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings
|
Original
|
PDF
|
600-20io1
600-22io1
MCC44
MCC26
MCC19
MCC255
motor IG 2200 19
THYRISTOR MODULE IXYS MCC 310
MCC95
MCC132
MCC161
MCC162
MCC170
MCC72
MCC94
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
PDF
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|
MDD255
Abstract: ixys MCC 700 255-16N1
Text: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1
|
Original
|
PDF
|
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
MDD255
ixys MCC 700
255-16N1
|
25518N
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V Type 3 1 3 2 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1
|
Original
|
PDF
|
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
25518N
|
MDD25
Abstract: 255-16N1 MDD255 ixys MCC 700
Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol
|
Original
|
PDF
|
2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
20100203a
MDD25
255-16N1
MDD255
ixys MCC 700
|
ZY 180L
Abstract: ZY 20-12 diode zy MCC MDD IXYS
Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 2 MDD 175-28N1 MDD 175-34N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0
|
Original
|
PDF
|
175-28N1
175-34N1
800-3400V
E72873
Isolat0747
20121206e
ZY 180L
ZY 20-12
diode zy
MCC MDD IXYS
|
Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Conditions
|
Original
|
PDF
|
2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
20100203a
|
Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
|
Original
|
PDF
|
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
E72873
20130409f
|
312-22N1
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
|
Original
|
PDF
|
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
200-2200V
E72873
20121206e
312-22N1
|
|
|
M8x20
Abstract: 25518N I101S MDD255 ixys mcc ixys mcc 255
Text: MDD 255 High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 1 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine
|
Original
|
PDF
|
2x450
2x270
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
10Transient
M8x20
25518N
I101S
MDD255
ixys mcc
ixys mcc 255
|
Untitled
Abstract: No abstract text available
Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
|
Original
|
PDF
|
255-12N1
255-14N1
255-16N1
255-18N1
255-20N1
255-22N1
E72873
20130813g
|
Untitled
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
|
Original
|
PDF
|
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
E72873
20130409f
|
Untitled
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
|
Original
|
PDF
|
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
E72873
20130813g
|
ixys mdd
Abstract: No abstract text available
Text: MDD 175 IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V High Power Diode Modules Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
|
Original
|
PDF
|
175-28N1
175-34N1
E72873
20091110d
ixys mdd
|
E72873
Abstract: No abstract text available
Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;
|
Original
|
PDF
|
00-3400V
175-28N1
175-34N1
E72873
20091110d
E72873
|
MCC255
Abstract: No abstract text available
Text: MDD 175 High Power Diode Modules IFRSM = 2x 450 A IFAVM = 2x 175 A VRRM = 2800-3400 V Preliminary data VRSM VDSM VRRM VDRM V 2900 3500 V 2800 3400 3 1 Type MDD 175-28N1 MDD 175-34N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C;
|
Original
|
PDF
|
00-3400V
175-28N1
175-34N1
20080313a
MCC255
|
6206a
Abstract: mcc501 MDK630
Text: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for
|
Original
|
PDF
|
150A113Â
ISO9001Â
6206a
mcc501
MDK630
|
MDD 500-22N1
Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●
|
Original
|
PDF
|
D6-11
D6-14
D6-17
D6-20
D6-23
D6-26
D6-29
D6-32
D6-35
D6-38
MDD 500-22N1
ixys MDD 26 - 14
ixys MDD 172 12
B2U 250
S2MD
2235nm
ixys MCC 700
IXYS MCC 550
mcc 550 ixys
MDD 500-12N1
|
Untitled
Abstract: No abstract text available
Text: □IXYS MCO 600 High Power Single Thyristor Module Itrms - 928 lTAV = 600 A VRRM = 2000-2200 V Preliminary data M M RSM T RRM V DSM VDRM V V 2100 2300 2000 2200 3 Test Conditions Itrm s Tvj - TVJM Tc = 85°C; 180° sine I tsm l2t di/dt cr Maximum Ratings
|
OCR Scan
|
PDF
|
600-20io1
600-22io1
|