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    MC 139 TRANSISTOR Search Results

    MC 139 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MC 139 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M37150MB-XXXFP

    Abstract: BC25 SFR1 4000 M37150M8-XXXFP M37150MA M37150EFFP M37150M6-XXXFP M37150MA-XXXFP M37150MC-XXXFP M37150MF-XXXFP
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d-900 Unit2607 M37150MB-XXXFP BC25 SFR1 4000 M37150M8-XXXFP M37150MA M37150EFFP M37150M6-XXXFP M37150MA-XXXFP M37150MC-XXXFP M37150MF-XXXFP

    M37150MB-XXXFP

    Abstract: No abstract text available
    Text: M37150M6/M8/MA/MC/MF-XXXFP, M37150EFFP SNGLE-CHIP 16-BIT CMOS MICROCOMPUTER with DATA ACQUISITION CONTROLLER 1. DESCRIPTION The M37150M6/M8/MA/MC/MF-XXXFP and M37150EFFP are single-chip microcomputers designed with CMOS silicon gate technology. They have an OSD, data slicer, and I2C-BUS interface, making them perfect for TV channel selection systems with a closed caption decoder. The M37150EFFP has a built-in PROM that can be


    Original     		PDF M37150M6/M8/MA/MC/MF-XXXFP, M37150EFFP 16-BIT REJ03B0128-0100Z M37150M6/M8/MA/MC/MF-XXXFP M37150EFFP M37150M6-XXXFP) M37150M8-XXXFP) M37150MA-XXXFP) M37150MB-XXXFP

    RBS 6000

    Abstract: EE16 VERTICAL 10 PIN osd font RBS 6000 -ericsson mcu M37150MB-XXXFP Data more RBS 6000 M37150M8-XXXFP RBS 6000 -ericsson software M37150EFFP M37150M6-XXXFP
    Text: M37150M6/M8/MA/MC/MF-XXXFP, M37150EFFP SNGLE-CHIP 8-BIT CMOS MICROCOMPUTER 1. DESCRIPTION The M37150M6/M8/MA/MC/MF-XXXFP and M37150EFFP are single-chip microcomputers designed with CMOS silicon gate technology. They have an OSD, data slicer, and I2C-BUS interface, making them perfect for TV channel selection systems with a closed caption decoder. The M37150EFFP has a built-in PROM that can be


    Original     		PDF M37150M6/M8/MA/MC/MF-XXXFP, M37150EFFP M37150M6/M8/MA/MC/MF-XXXFP M37150EFFP M37150M6-XXXFP) M37150M8-XXXFP) M37150MA-XXXFP) M37150MC-XXXFP) M37150MF-XXXFP, RBS 6000 EE16 VERTICAL 10 PIN osd font RBS 6000 -ericsson mcu M37150MB-XXXFP Data more RBS 6000 M37150M8-XXXFP RBS 6000 -ericsson software M37150M6-XXXFP

    EPM7192S

    Abstract: EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E epm7064 adapter MAX7000E
    Text: Includes MAX 7000E & MAX 7000S MAX 7000 Programmable Logic Device Family August 2000, ver. 6.02 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)


    Original     		PDF 7000E 7000S 7000S in-to02: EPM7192S EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E epm7064 adapter MAX7000E

    D2433

    Abstract: EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E 100-Pin Package Pin-Out Diagram
    Text: Includes MAX 7000E & MAX 7000S MAX 7000 Programmable Logic Device Family July 1999, ver. 6.01 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)


    Original     		PDF 7000E 7000S 7000S D2433 EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E 100-Pin Package Pin-Out Diagram

    epm7032

    Abstract: EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E K2107
    Text: Includes MAX 7000E & MAX 7000S MAX 7000 Programmable Logic Device Family July 1999, ver. 6.01 Features. Data Sheet • ■ ■ ■ ■ ■ ■ f High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)


    Original     		PDF 7000E 7000S 7000S epm7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E EPM7256E K2107

    C732B

    Abstract: 337 BGA 337 BGA footprint EPM7032AE EPM7064AE EPM7128A EPM7128AE EPM7256A EPM7256AE EPM7512AE
    Text: MAX 7000A Includes MAX 7000AE Programmable Logic Device Family August 2000, ver. 3.1 Data Sheet • Features. ■ ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX


    Original     		PDF 7000AE JESD-71 EPM7128A EPM7256A 49-pin 169-pin C732B 337 BGA 337 BGA footprint EPM7032AE EPM7064AE EPM7128AE EPM7256AE EPM7512AE

    BGA-404

    Abstract: No abstract text available
    Text: MAX 7000A Includes MAX 7000AE Programmable Logic Device Family May 2000, ver. 3.01 Data Sheet Features. • ■ ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX


    Original     		PDF 7000AE JESD-71 EPM7128A EPM7256A BGA-404

    M25p64 vdfpn8 footprint

    Abstract: D-USB-BRA42-T11 STM32F103ZET6 UM0686 CON2 connector STM32F103ZE STM32F103 ZET6 FTR-110-01-S-D stm32f103 DAC MT008-A
    Text: UM0686 User manual STEVAL-IHM022V1 STM32-based dual motor FOC drive demonstration board Introduction The STEVAL-IHM022V1 demonstration board is designed as a dual motor field-oriented control FOC development platform for STMicroelectronics’ ARM Cortex - M3 core-based


    Original     		PDF UM0686 STEVAL-IHM022V1 STM32-based STM32F103ZE M25p64 vdfpn8 footprint D-USB-BRA42-T11 STM32F103ZET6 UM0686 CON2 connector STM32F103 ZET6 FTR-110-01-S-D stm32f103 DAC MT008-A

    2SA1037K

    Abstract: 2SA1576 SC-59A T106 T107 T146 T147
    Text: 40 E ROHM CO LT] 7020 = ^ D • aGDSM37 7 BRHM 2SA1037K/2SA1576 / T ransistors ' 7 Z 2 7 - 0 C) 2SA1037EC 2SA1576 X tf P K N P y ÿ ^ h ^ v ; ^ /General Small Signal Amp. Epitaxial Planar Super/Ultra Mini-Mold PNP Silicon Transistors • WFÎ’tfîÉSi/'Dimensions Unit: mm)


    OCR Scan     		PDF QQQSM37 2SA1037K/2SA1576 2SA1037K 2SA1576 2SC2412K/2SC4081 2SC2412K/2SC4081. 2SA1037K SC-59A 2SA1576 SC-59A T106 T107 T146 T147

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0D14451 BUZ32 BUZ32_ bbS3T31 0Q14H55- T-39-11 001445b bb53T31

    T0254AA

    Abstract: No abstract text available
    Text: 013^13^ 0 0 0 2 ^ 5 7Tb SflE D SEMTECH CORP POWER MOSFET IN HERMETIC ISOLATED T0254AA PACKAGE SM2F151* SM2F351* SM2F251* SM2F451* These devices offer the latest ruggedized M O SFET transistor die mounted in isolated and hermetically sealed metal packages. The standard M O SFET characteristics of very low


    OCR Scan     		PDF T0254AA SM2F151* SM2F351* SM2F251* SM2F451* T0254AA T0258AA FT0258AA HDS100

    t600c

    Abstract: MC 139 transistor BUZ32 T0220AB MC139 K158
    Text: N AMER PHILIPS/DISCRETE DbE D _ • PowerMOS transistor ^53131 00m451_M ■ BU Z32 May 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,


    OCR Scan     		PDF bbS3131 QGm451 BUZ32 T0220AB; bb53ci31 BUZ32 T-39-11 7z2119? t600c MC 139 transistor T0220AB MC139 K158

    MRF1008MC

    Abstract: No abstract text available
    Text: IS E 3 I t3ti75SM GGfiTTflM 4 | MOTORCLA SC XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF1008MA MRF1008MB MRF1008MC TECHNICAL DATA The R F L in e 8.0 W P E A K 9 6 0 -1 2 1 5 M H z MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N . . . design ed for C la ss B and C com m on-base amplifier applications


    OCR Scan     		PDF t3ti75SM MRF1008MA MRF1008MB MRF1008MC MRF1008MA, MRF1008MB, MRF1008MC

    MPSU07

    Abstract: ic 31050 MC 139 transistor MPSU57 2S53
    Text: MOTOROLA SC 1SE D I L3b72S4 □ OfiSM'ìS 1 | XSTRS/R F T -3 Ì-0 7 MOTOROLA SEMICONDUCTOR MPS-U07 TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for general-purpose, high-voltage amplifier and driver


    OCR Scan     		PDF L3b72S4 MPS-U07 MPS-U57 MPSU07 ic 31050 MC 139 transistor MPSU57 2S53

    14n60

    Abstract: OT360 14N60E OC57
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet AAGW14N60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packag ed w ith a soft recovery u ltra -fa s t re ctifier and uses an advanced


    OCR Scan     		PDF 14N60ED 14n60 OT360 14N60E OC57

    Untitled

    Abstract: No abstract text available
    Text: IjBCludW MAX 7000 ÜUX7Q0K& MAX7888S m m m Programmable Logic Device Family . May 1999, ver. 6 Data Sheet Features. • ■ ■ ■ ■ ■ ■ High-performance, EEPROM -based program m able logic devices PLDs based on second-generation M ultiple Array M atrix (MAX )


    OCR Scan     		PDF MAX7888S 7000S 7256E 192-Pin 208-Pin EPM7256E EPM7256S

    epm7064 adapter

    Abstract: epm7192
    Text: Incudes MAX 7000 MAX 7D00E& MAX 7QO0S Programmable Logic Device Family May 1999» ver. 6 Data Sheet Features. * S3 88 M 88 W. H igh-perform ance, EEPROM -based p ro g ram m ab le logic devices PLDs b ased on second-generation M ultiple A rray M atriX (MAX )


    OCR Scan     		PDF 7D00E& 7000S 192-Pin EPM7256E 208-Pin EPM7256S epm7064 adapter epm7192

    Untitled

    Abstract: No abstract text available
    Text: BSO 304SN Infineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Single N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 30 V flbsion


    OCR Scan     		PDF 304SN Q67000-S4012 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    epm7064 adapter

    Abstract: EPM71925 MAX7000E epm7192 EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E
    Text: ¿ s u t* M A X 7000 MAX 7000S Programmable Logic Device Family July 1999. ver. 6.01 Datasheet Features • ■ ■ ■ ■ ■ _ High-performance, EEPROM-based programmable logic devices PLDs based on second-generation Multiple Array MatriX (MAX®)


    OCR Scan     		PDF 7000S 7000S 192-Pin 208-Pin EPM7256E EPM7256S epm7064 adapter EPM71925 MAX7000E epm7192 EPM7032 EPM7064 EPM7096 EPM7128E EPM7160E EPM7192E

    7256S

    Abstract: MPU 6000 7160E ATIC 164 D2
    Text: «/SToSSIs MAX 7000 MAX 7000S Programmable Logic Device Family May 1999. ver. 6 Datasheet Features • ■ ■ ■ ■ ■ m High-perform ance, EEPRO M -based program m able logic devices PLDs based on second-generation M ultiple A rray M atrix (MAX®)


    OCR Scan     		PDF 7000S 7000S 160-Pin 192-Pin 7256E 208-Pin 7256S MPU 6000 7160E ATIC 164 D2

    MTP12N10L

    Abstract: No abstract text available
    Text: MOTOROLA SC X S T R S /R F IM E D I t,3 b ? a S 4 □ 0 ^ 0 2 7 5 7 MOTOROLA - - 3 1 ? | - m SEMICONDUCTOR TECHNICAL DATA MTP12N08L MTP12N10L Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs


    OCR Scan     		PDF Y145M, 21A-04 O-220AB MTP12N10L

    IRF150M

    Abstract: No abstract text available
    Text: SGS-THOMSON * 5 iL iO T O K S 7 IR F 150 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 1 5 0 . . . . • V d ss 100 V R D S o n Id 0 .0 5 5 n 40 A AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA A T 100°C


    OCR Scan     		PDF IRF150 IRF150M

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485