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    MBRS360T3 Price and Stock

    onsemi MBRS360T3G

    DIODE SCHOTTKY 60V 3A SMC
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    DigiKey MBRS360T3G Digi-Reel 34,091 1
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    MBRS360T3G Cut Tape 34,091 1
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    MBRS360T3G Reel 34,000 2,500
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    MBRS360T3G Ammo Pack 1
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    Mouser Electronics MBRS360T3G 64,723
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    Verical MBRS360T3G 405,000 7,500
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    MBRS360T3G Reel 2,500 2,500
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    onsemi MBRS360T3

    DIODE SCHOTTKY 60V 3A SMC
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    DigiKey MBRS360T3 Reel 2,500
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    MBRS360T3 400 9
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    onsemi MBRS360T3H

    DIODE SCHOTTKY 60V 4A SMC
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    Aptina Imaging MBRS360T3G

    Rectifier Diode Schottky Si 60V 4A 2-Pin SMC T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MBRS360T3G 120,000 2,500
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    onsemi MBRS360T3G.

    Schottky Rectifier, 3A, 60V, 403, Full Reel; Repetitive Peak Reverse Voltage:60V; Average Forward Current:3A; Diode Configuration:Single; Diode Case Style:Do-214Ab (Smc); No. Of Pins:2Pins; Forward Voltage Max:630Mv; Product Range:- Rohs Compliant: Yes |Onsemi MBRS360T3G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS360T3G. Reel 2,500
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    Find more MBRS360T3 price and stock on Findchips.com

    MBRS360T3 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS360T3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS360T3 Motorola SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 40, 60 VOLTS Original PDF
    MBRS360T3 On Semiconductor 3A 60V Schottky Rectifier; Package: SMC; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS360T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS360T3 On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360T3 On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 403-03, SMC, 2 PIN, Rectifier Diode Original PDF
    MBRS360T3 Microsemi Schottky Rectifier Scan PDF
    MBRS360T3 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 60V, 3A, Pkg Style SMC Scan PDF
    MBRS360T3G On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360T3G On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403-03, SMC, 2 PIN, Rectifier Diode Original PDF

    MBRS360T3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3

    DIODE B36

    Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3 10IPK/IO DIODE B36 part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3 MBRS360T3/D

    DIODE MOTOROLA B34

    Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
    Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBRS340T3/D MBRS340T3 MBRS360T3 DIODE MOTOROLA B34 marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34

    B36 schottky diode

    Abstract: No abstract text available
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G MBRS360T3/D B36 schottky diode

    Diode marking CODE 5M smb

    Abstract: No abstract text available
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G MBRS360T3/D Diode marking CODE 5M smb

    MBRS360BT3G

    Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
    Text: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G MBRS360T3/D MBRS360BT3G MBRS360T3G MBRS360T3 B36 schottky diode

    5M MARKING CODE DIODE SMC

    Abstract: No abstract text available
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC

    part marking b36 diode

    Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G MBRS360T3/D part marking b36 diode MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Text: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


    Original     		PDF MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc

    DIODE ON SEMICONDUCTOR B34

    Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 r14525 MBRS340T3/D DIODE ON SEMICONDUCTOR B34 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32

    DIODE B36

    Abstract: part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3 MBRS360T3/D DIODE B36 part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3 MBRS360T3/D

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80 V(FM) Max.(V) Forward Voltage.74 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)25


    Original     		PDF MBRS360T3 Voltage60 StyleDO-214var

    marking B32 diode SCHOTTKY

    Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D

    MBRS360T3G

    Abstract: MBRS360T3 DIODE B36 part marking b36 diode
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3 MBRS360T3/D MBRS360T3G MBRS360T3 DIODE B36 part marking b36 diode

    5M MARKING CODE DIODE SMC

    Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS360T3, MBRS360BT3G 5M MARKING CODE DIODE SMC SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode

    DSE160-06A

    Abstract: dse160 - 12A
    Text: DRV 104 DRV104 SBVS036B – SEPTEMBER 2003 – REVISED MARCH 2006 1.2A PWM High-Side Driver for Solenoids, Coils, Valves, Heaters, and Lamps FEATURES DESCRIPTION ● HIGH OUTPUT DRIVE: 1.2A ● WIDE SUPPLY RANGE: +8V to +32V ● COMPLETE FUNCTION: PWM Output


    Original     		PDF DRV104 SBVS036B 500Hz 100kHz HTSSOP-14 DRV104 DSE160-06A dse160 - 12A

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    D0-214AB

    Abstract: 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36
    Text: 3 Amp Schottky Rectifier HSM350, HSM360 — Oh rATur\nr d a m r CATHODE BAND Dim. Inches Minimum D0215AB D0214AB Microsemi Catalog Number HSM350* HSM360* A B C D E F G H Idustry Part Number SK36 MBRS360T3 30BQ060 Working Peak Reverse Voltage .117 .260 .220


    OCR Scan     		PDF HSM350, HSM360 D0214AB D0215AB HSM350* HSM360* MBRS360T3 30BQ060 D0-214AB 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36

    marking B34 diode SCHOTTKY

    Abstract: b34 DIODE schottky diode schottky B34 DIODE MOTOROLA B34 DIODE B36 Schottky Diode B36 marking b34 DIODE B34 B36 schottky diode B34 schottky diode
    Text: MOTOROLA SEMICONDUCTOR — — — TECHNICAL DATA MBRS340T3 MBRS360T3 S u rfa c e M o u n t S c h o tt k y P o w e r R e ctifie r Motorola Preferred Device . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and. metal


    OCR Scan     		PDF

    gex 33

    Abstract: GFM 936 GFR 310 129 gez GFM 45 gfp 232 CASE 403-03 GeX 28 GEX MARKING gfk marking
    Text: SMC Devices Maximum die size 104 mil x 104 mil CASE 403-03 Rectifiers — Schottky Device MBRS340T3 MBRS360T3 VRRM Volts •o Amps Ifsm Amps V F @ 25°C Volts lR @ 25°C mA 40 60 3 3 80 80 0.525 0.74 2 2 If s m Amps Amps VF @ 25°C Volts lR @ 25°C Volts 200


    OCR Scan     		PDF MBRS340T3 MBRS360T3 MURS320T3 MURS360T3 gex 33 GFM 936 GFR 310 129 gez GFM 45 gfp 232 CASE 403-03 GeX 28 GEX MARKING gfk marking

    DIODE MOTOROLA B34

    Abstract: DIODE MOTOROLA B36 motorola b36 motorola b34 motorola package marking diodes b34 diode marking b34 B34 Motorola MOTOROLA B34 diode mbrs340t3 marking b34
    Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features epitaxial construction with


    OCR Scan     		PDF MBRS340T3/D DIODE MOTOROLA B34 DIODE MOTOROLA B36 motorola b36 motorola b34 motorola package marking diodes b34 diode marking b34 B34 Motorola MOTOROLA B34 diode mbrs340t3 marking b34